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P-Channel 30-V (D-S) MOSFET FE ATURES
- Halog en-free T r e n c h F E T® P ower MOSFET 100% R g Te sted 100% UIS Tested APPLIC ATIONS Notebook Battery Charging Notebook Adapter Switch P RODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A ) Q g (T yp.) - 30 0.018 at VGS = -
10 V - 16d
.0305 at VGS = - 4 .5 V - 16d Notes: Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 81 °C/W. d. Package limited. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS - 30 VGate-Source V oltage VGS ± 25 C ontinuous Drain Current (TJ = 150 °C TC = 25 °C ID - 16d A TC = 70 °C - 16d TA = 25 °C - 1 0.6a, b TA = 70 °C - 8 .6a, b Pulsed Dr ain Current IDM - 50 C ontinuous Source-Drain Diode Current TC = 25 °C IS - 16d TA = 25 °C - 3 .0a, b A valanche Current L = 0.1 mH IAS - 20 Single-Pulse A valanche Energy EAS 20 mJ Maximum Power Dissipation TC = 25 °C PD WTC = 70 °C TA = 25 °C 3.7a, b TA = 70 °C 2.4a, b Oper ating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 T HERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t ≤ 10 s Rth JA 26 33 °C/WMaximum Junction-to-Case Steady State Rth JC 1. 9 2.4 S G D P-Channel MOSFET RoHS COMPLIANT TO-251 SDG Top View D5-1 www.daysemi.jp
tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V, ID = - 250 µA - 30 V VDS T emperature Coefficient ΔVDS/TJ ID = - 250 µA - 31 mV/°CVGS( th) T emperature Coefficient ΔVGS(t h)/TJ 5.5 Gate-S ource Threshold Voltage VGS( th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 25 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 30 V, VGS = 0 V - 1 µAVDS = - 30 V, VGS = 0 V , TJ = 55 °C - 5 On-State Drain Currenta ID( on) VDS ≥ -
10 V, VGS =
- 10 V - 30 A Drain-Source On-State Resistancea RDS( on) VGS = - 10 V, ID = - 10 A 0.015 0.018 ΩVGS = - 4.5 V, ID = - 7 A 0.0255 0.0305 Forward Transconductancea gfs VDS = - 10 V, ID = - 10 A 23 S Dy namicb Inpu t Capacitance Ciss VDS = - 15 V , VGS = 0 V , f = 1 MHz 1960 pFOutput Capacitance Coss 380 Re verse Transfer Capacitance Crs s 325 T otal Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 10 A 43 65 nCVDS = - 15 V, VGS = - 4.5 V, ID = - 1 0 A 22 33 Gate-Source Charge Qgs 6 Gate- Drain Charge Qgd 11 G ate Resistance Rg f = 1 MHz 0.3 1.3 2.5 Ω Tur n-On Delay Time td( on) VDD = -
15 V, RL = 3
Ω ID ≅ - 5 A, VGEN = - 1
0 V, Rg =
1 Ω 11 22 ns Rise Time tr 13 Turn-Off DelayTime td( off) 32 Fall Time tf 91 Tur n-On Delay Time td( on) VDD = - Ω ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω Rise Time tr 100 160 Turn-Off DelayTime td( off) 28 Fall Time tf 15 Drain -Source Body Diode Characteristics Continous Source-Drain Diode Current I S TC = 2 5 °C - 16 APulse Diode Forward Current ISM - 50 Body Diode V oltage VSD IS = - 2 A, VGS = 0 V - 0.75 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 2 A, dI/dt = 100 A/µs , TJ = 25 °C 45 ns Body Diode Reverse Recovery Charge Q rr 20 40 nC Reverse Recovery Fall Time ta 13 nsRe verse Recovery Rise Time tb 15 D5-1 www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Ou tput Characteristics On-Resistance vs. Drain Current Gate Charge 12345 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS =1 0t h ru 5 V VGS =3 V VGS =4 V 0.01 0.02 0.03 0.04 0.05 1 02 03 04 05 06 0 - On -Resistance (Ω)RDS(on ID - Drain Current (A) VGS =1 VGS =4 . 5V 1 02 03 04 05 0 ID =1 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS =2 VDS =1 VDS =1 Tran sfer Characteristics Capacitance On-Resistance vs. Junction Temperature 2345 VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID VGS = 125 °C VGS =2 5 ° C VGS =- 5 5 ° C Crss 600 1200 1800 2400 3000 6 12 18 24 30 Cis s VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 0.8 1.0 1.2 1.4 1.6 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRD S(on) VGS =- 1 0V VGS = - 4.5 V ID =1 D5-1 www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted So urce-Drain Diode Forward Voltage Threshold Voltage 0.0 VSD -S ource-to-Drain Voltage (V) - Source Current (A)IS 0.01 0.001 0.1 100 TJ = 25 °CTJ = 150 °C 0.4 - 0.2 0.0 0.2 0.4 0.6 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS( th) TJ - Temperature (°C) ID =5m A On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient 0.00 0.02 0.04 0.06 0.08 0.10 46 8 10 - On -Resistance (Ω)RDS(on VGS - Gate-to-Source Voltage (V) TJ = 25 °C TJ = 125 °C ID =1 0.01 0.1 1 10 100 1000 Time (s) Power (W) Safe Operating Area 0.01 100 100 0.01 Drain Current (A)ID 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified s ms 100 ms 0.1 1 10 TA = 25 °C Single Pulse Limited byR DS(on)* DC s D5-1 www.daysemi.jp
T TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted * T he power dissipation P D is based on T J( max) = 175 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissip ation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Cu rrent Derating* 25 50 75 100 125 150 TC - Case Temperature (°C) Package Limited ID - Drain Current (A) Pow er, Junction-to-Case 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Po wer Derating, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) D5-1 www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted No rmalized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM Duty Cycle, D = 2. Per Unit Base = RthJA =1 1 0° C /W 3. TJM -T A =P DMZthJA(t) Surface Mounted Duty Cycle = 0.5 0.02 N ormalized Thermal Transient Impedance, Junction-to-Case 0.1 0.01 0.2 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance Single Pulse 0.1 10-3 10-2 110-110-4 0.02 0.05 D5-1 www.daysemi.jp
Note: Dimension L3 is for reference only. b e L D c A E /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032/C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083 /C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e
2.28 BSC
0.090 BSC
L 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346
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