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Technical content
N-Channel 30-V (D-S) MOSFET
FEATURES
- Halo gen-free TrenchFET ® Gen III Power MOSFET 100 % R g Test ed 100 % UIS Tested
APPLICATIONS
- System Power PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg ( Typ.) 0.0135 at VGS = 1
0 V 16
7.3 nC 0.0165 at VGS = 4.5 V 16 N-Channel MOSFET G D S Notes: Based on TC = 25 ° b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted P arameter Symbol Limit Unit Drain-Source Voltage VDS 30 VGat e-Source Voltage VGS ± 20 Contin uous Drain Current (TJ = 150 ° TC = 25 ID A TC = 70 °C 16 TA = 25 °C 12b, c TA = 70 °C 9.5b, c Pulsed Dr ain Current IDM 32 A valanche Current L = 0.1 mH IAS 15 A valanche Energy EAS 11. 25 mJ Continuous Source-Drain Diode Current TC = 25 °C IS
16 ATA = 25
°C 2.9b, c Max imum Power Dissipation TC = 25 PD WTC = 70 °C 17.7 TA = 25 °C 3.5b, c TA = 70 °C 2.2b, c Ope rating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °CSoldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS P arameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t ≤ 10 s RthJ A 29 36 °C/WMaximum Junction-to-Case (Drain) Steady State RthJC 3.6 4.5 RoHS COMPLIANT TO-251 SDG Top View D5-/ www.daysemi.jp
tes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. St resses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S PECIFICATIONS TJ = 25 °C, unless otherwise noted P arameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdo wn Voltage VDS VGS = 0 V , ID = 250 µA 30 V VDS T emperature Coefficient ΔVDS/TJ ID = 250 µA 33 mV/°C VGS( th) T emperature Coefficient ΔVGS( th)/TJ - 5 Gate-S ource Threshold Voltage VGS (th) VDS = VGS , ID = 250 µA 1.2 2.5 V Gate-Source Leakage IGSS VDS = 0 V , VGS = ± 20 V ± 1 00 nA Zero Gate Voltage Drain Current IDSS VDS = 3
0 V, VGS = 0 V 1
µAVDS = 30 V , VGS = 0 V , TJ = 55 °C 5 On-State Drain Currenta ID( on) V DS ≥ 5 V , VGS = 10 V 20 A Drain-Source On-State Resistancea RDS( on) VGS = 10 V , ID = 10 A 0.0105 0.0135 ΩVGS = 4.5 V , ID = 7 A 0.0135 0.0165 Forward Transconductancea gfs VDS = 15 V , ID = 10 A 24 S Dy namicb Inpu t Capacitance Ciss VDS = 15 V, VGS = 0 V , f = 1 MHz 846 pFOutput Capacitance Cos s 18 Reverse Transfer Capacitance Crs s 72 T otal Gate Charge Qg VDS =
15 V, VGS = 1
0 V, ID = 1
0 A 15.4 23 nC VDS = 15 V , VGS = 4.5 V , ID = 10 A 7.3 Gate-Source Charge Qgs 2.3 Gate- Drain Charge Qgd 2.2 G ate Resistance Rg f = 1 MH z 0.2 0.8 1.6 Ω Tur n-On Delay Time td( on) VDD = 15 V , RL = 1.5 Ω ID ≅
10 A, VGEN = 4
.5 V, Rg = 1 Ω 15 30 ns Rise Time tr 12 Turn-Off Delay Time td( off) 13 Fall Time tf 10 Tur n-On Delay Time td( on) VDD = 15 V , RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V , Rg = 1 Ω Rise Time tr 91 Turn-Off Delay Time td( off) 14 Fall Time tf 81 Drain -Source Body Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 ° C 16 A Pulse Diode Forward Current ISM 32 Body Diode V oltage VSD IS = 3 A, VGS = 0 V 0.78 1.2 V Body Diode Reverse Recovery Time trr IF = 10 A, dI/ dt = 100 A/µs, TJ = 25 °C 34 ns Body Diode Reverse Recovery Charge Qrr 9.5 19 nC Reverse Recovery Fall Time ta 10 ns Re verse Recovery Rise Time tb 7 D5-/ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted Outp ut Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0.0 VDS - Drain-to-Source Voltage (V) - Drain Current (A)I D VGS =1 0t h ru 5 V VGS =3V VGS =4V 0.005 0.010 0.015 0.020 0.025 1 02 03 04 05 0 - On -Resistance (Ω)RDS( on) ID - Drain Current (A) VGS =1 VGS =4 . 5V 0.0 - Gate -to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS VDS =1 VDS =1 ID =1 VDS =2 Tran sfer Characteristics Capacitance On-Resistance vs. Junction Temperature 2345 VGS - Gate-to-Source Voltage (V) - Drain Current (A)I D TC = 25 °C TC = 125 °C TC = - 55 °C Crss 220 440 660 880 1100 5 10 15 20 25 30 Cis s VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss 0.6 0.8 1.0 1.2 1.4 1.6 1.8 50 - 25 0 25 50 75 100 125 150 TJ -J unction Temperature (°C) (Normalized) - On -ResistanceRDS( on) VGS =4 . 5V VGS =1 ID =1 D5-/ www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Sou rce-Drain Diode Forward Voltage Threshold Voltage 0.0 VSD -S ource-to-Drain Voltage (V) - Source Current (A)I S 0.01 0.001 0.1 100 TJ = 150 °C TJ = 25 °C - 0 - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA Variance (V)VGS( th) TJ - Temperature (°C) ID =5m A On -Resistance vs. Gate-to-Source Voltage Single Pulse Power (Junction-to-Ambient) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 012 34567 8 91 0 - On -Resistance (Ω)RDS( on) VGS - Gate-to-Source Voltage (V) TJ =2 5 ° C TJ = 125 °C ID =1 120 0 111 0 0 .00 .01 Time (s) Power (W) 0.1 Saf e Operating Area, Junction-to-Ambient 0.01 100 100 0.01 Drain Current (A)I D 0.1 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified s ms 100 ms 0.1 1 10 TA = 25 °C Single Pulse Limited byR DS(on)* DC s BVDSS Limited D5-/ www.daysemi.jp
L CHARACTERISTICS 25 °C, unless otherwise noted * T he power dissipation P D is based on T J( max) = 150 °C, using junction-to-case thermal resi stance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 2 55 07 5 1 0 0 1 2 5 1 5 0 TC - Case Temperature (°C) I D - Drain Current (A) Package Limited Pow er, Junction-to-Case 25 50 75 100 125 150 TC - Case Temperature (°C) Power (W) Po wer, Junction-to-Ambient 0.0 0.4 0.8 1.2 1.6 2.0 25 50 75 100 125 150 TA - Case Temperature (°C) Power (W) D5-/ www.daysemi.jp
PICAL CHARACTERISTICS 25 °C, unless otherwise noted Norm alized Thermal Transient Impedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Notes: PDM Duty Cycle, D = 2. Per Unit Base = RthJA = 81 °C/W TJM -T A =P DMZthJA(t) Surface Mounted Duty Cycle = 0.5 Single Pulse 0.02 0.05 No rmalized Thermal Transient Impedance, Junction-to-Case 10-3 10-2 0 1110-110-4 0.2 0.1 Duty Cycle = 0.5 Square WaveP ulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse 0.02 0.05 D5-/ www.daysemi.jp
Note: Dimension L3 is for reference only. b e L D c A E /C0084/C0079/C0262/C0050/C0053/C0049/C0065/C0065/C0032/C0040/C0068/C0080/C0065/C0075/C0041 /C0077/C0073/C0076/C0076/C0073/C0077/C0069/C0084/C0069/C0082/C0083 /C0073/C0078/C0067/C0072/C0069/C0083 Dim Min Max Min Max A 2.21 2.38 0.087 0.094 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 0.76 1.14 0.030 0.045 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 0.46 0.58 0.018 0.023 D 5.97 6.22 0.235 0.245 E 6.48 6.73 0.255 0.265 e
2.28 BSC
0.090 BSC
L 8.89 9.53 0.350 0.375 1.91 2.28 0.075 0.090 0.89 1.27 0.035 0.050 1.15 1.52 0.045 0.060 ECN: S-03946—Rev. E, 09-Jul-01 DWG: 5346
Package Information
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