DTGF15N60

DTGF15N60 DINTEK | Alldatasheet

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© Low Vee(sat) rt e Fast Switching e High Ruggedness 25V (= 25%) ae (eon. © Short-circuit Rated DTGP1SN60: TO-220 DTGK15N60: TO-263 Home Appliances © Compressors / Air Conditioning Motor Control General Purpose Inverters TO-220 TO-220F TO-263 yp 2 | | i 123 123 13 me) E 1. Gate 2. Collector 3. Emitter Absolute Maximum Ratings fcamcoroenmerte Ts || Vv DC Collector Current (T.= 100°C, limited by max T)) le [iceieercnentewtiniedwant) ||| A [_» | Diode Forward Current (T-= 100°C, limited by max T;) Diode ued Curent (ple with ited by max) [=~ |» | Maximum Power Dissipation (T.= 25°C, T; = 150°C) w c

DTGP15N60/DTGF45N60/DTGK15N60 www.din-tek.jp Static Electrical Characteristics [Penetrations [an | Wwe | wan [ [comoetnterimaionietn | tis | verovernon [am | = |= |v | Fraseonvero | | | w | Collector-to-Emitter Leakage Current j vcwmeneem | | a | WA T= 125°C Fecicemicinspame | twp ween | | pm | a Se Pieces [ps | a | Collector-to-Emitter Saturation Voltage Verssat) jemi [le | | v Ty= 125°C [eee | pe fae | Diode Forward Voltage Ve | vse |. [ae] - | v Thermal Characteristics [Parameter | symbot_| min | typ | Max | unit | Pimamoabertomiimeneevozmveay | am | |= | a | ee] pe}, Peston Temsinasensnoaon fae | |= P| re “ pte Dynamic Electrical Characteristics [reser ema [a conan on [me [on] Vec = 400V, Total Gate Charge Vee = 15V, nc Ic= 15A

SEMICONDUCTOR DTGP15N60/DTGF15N60/DTGK15N60 www.din-tek.jp Switching Characteristics, Inductive Load (*) (2) [rameter Smbat |Tet conions [win [yp mx | Ut cs Re = 109, (Energy losses include recovery) [ratswichingtoss || | - [ose] - | Short Circuit Collector Current Vees400v,vessoov [~- | 60 | - | a | (1) 1,=25°C unless otherwise specified. (2). te: from 10% of Ic to 90% of Ic; ty: from 90% of Ic to 10% of Ic; Eon: from 10% of Vee to 10% of Vee} Eo from 90% of Vee to 10% of Ic.

SEMICONDUCTOR DTGP15N60/DTGF15N60/DTGK15N60 www.din-tek.jp Typical Electrical Characteristics 50 50 45 45 40 40 35 35 30 30 s 25 Sas ~ 20 20 15 15 10 10 ° Z— OY ° 0 1 2 3 4 5 0) 1 2 3 4 5 Vee (V) Vee (V) Fig. 1 Typical output characteristics Fig. 2 Typical output characteristics (T= 25°C, tp = 250 us) (T)= 150°C, tp = 250 ps) 30 8 / : } _5 = / = Sis 24 J 0 tC) o 2 4 6 8 10 12 1 0 25 SO 75 100 125 150 175 Vee (V) Junction Temperature T, (°C) Fig. 3 Typical transfer characteristics Fig. 4 Typical gate threshold voltage as a (Vce= 20 V, tp = 250 us) function of junction temperature (Vce = Ve, Ic= 250 pA)

SEMICONDUCTOR DTGP15N60/DTGF15N60/DTGK15N60 www.din-tek.jp 40 4 35 35 30 7 25 a25 E20 z2 ° ee 10 1 5 05 o Z o 0 1 2 3 4 0 25 50 75 100 125 150 175 Vee(W) Junction Temperature T, (°C) Fig. 5 Typical saturation voltage characteristics Fig. 6 Typical saturation voltage as a function (Vor = 15 V, tp = 250 us) of junction temperature (Vee = 15 V, tp = 250 us) 35 - — 20 - . < 7 Ss = 31s 4 15 sO 10 x0 1s 5 an 5 —10.220,10-263 sQ = = 10-220 0 0 o 05 41 15 2 25 25 50 75 «100 125180 ve (V) Case Temperature Te (°C) Fig. 7 Typical diode forward current as a function Fig. 8 Maximum DC collector current as a of forward voltage function of case temperature (Ve = 0 V, tp = 250 ps)

SEMICONDUCTOR DTGP15N60/DTGF15N60/DTGK15N60 www.din-tek.jp

20 E> 18 | Vq=400v

. l= 15A aN 16 fF 7-25" 15 . 14 N = a Sn = . 8 = 10 xt > 10 ‘S 8 N N 6 5 . x 4 —10220,10-263 ‘) 2 = = 10:220F ° 0 2 507 10025150 0 5 10 15 20 25 30 35 40 45 50 55 60 Case Temperature Te (°C) 5 (nc) Fig. 9 Maximum DC diode forward current Fig. 10 Typical gate charge characteristics as a function of case temperature (Ir limited by bonding wire) Vee = OV \\ f= MHz Ciss 1000 \\ 7, =25°C g g z § 10 o 5 10 15 20 25 30 Vee (V) Fig. 11 Typical capacitance as a function of collector-to-emitter voltage

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SEMICONDUCTOR DTGP15N60/DTGF15N60/DTGK15N60 www.din-tek.jp TO-263 . ry al OO] Min. — : F c [B20 4420 : ? | |= | {aed | pal, U | = ITT \\ yT a , h kK . Le el *

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