DM800S12TDRB STARPOWER | Alldatasheet
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SiC power MOSFET Low RDS(on) Low inductance case avoid oscillations ROHS Typical Applications Automotive application Hybrid and electric vehicle Inverter for motor drive Equivalent Circuit Schematic Type Package Marking Shipping DM800S12TDRB TO-247PLUS-4L DM800S12TDRB 30Units/Tube
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 2/10 B01 Absolute Maximum Ratings TC=25oC unless otherwise noted Mosfet Symbol Description Value Unit VDSS Drain-Source V oltage 1200 V VGSSmax Gate-Source V oltage -8/+22 V VGSSop Gate-Source V oltage -4/+15 V ID Drain Current @ Tvj=175oC 37 A PD Maximum Power Dissipation @ Tvj=175oC 162 W Body Diode Symbol Description Value Unit IF Source Current@ Tvj=175oC 30 A Discrete Symbol Description Values Unit Tvjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 3/10 B01 Mosfet Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit RDS(on) Static Drain-Source On-Resistance ID=20A,VGS=15V , Tvj=25oC 80.0 mΩ ID=20A,VGS=15V , Tvj=150oC 98.7 ID=20A,VGS=15V , Tvj=175oC 105 VGS(th) Gate-Source Threshold V oltage ID=5.0mA,VDS=VGS, Tvj=25oC 2.8 V IDSS Drain-Source Leakage Current VDS=VDSS,VGS=0V , Tvj=25oC 100 μA IGSS Gate-Source Leakage Current VGS=VGSS,VDS=0V , Tvj=25oC 200 nA RGint Internal Gate Resistance 3.3 Ω Ciss Input Capacitance VGS=0V ,VDS=800V, f=100kHz 1.67 nF Coss Output Capacitance 67.4 pF Crss Reverse Transfer Capacitance 4.38 pF Qg Total Gate Charge ID=18A,VDS=800V , VGS=-4/+15V 36.0 nC td(on) Turn-On Delay Time VDS=800V ,ID=20A, RGon=10Ω,RGoff=5.6Ω, VGS=-4/+15V , LS=40nH,Tvj=25oC 6 ns tr Rise Time 10 ns td(off) Turn-Off Delay Time 12 ns tf Fall Time 39 ns Eon Turn-On Switching Loss 0.65 mJ Eoff Turn-Off Switching Loss 0.09 mJ td(on) Turn-On Delay Time VDS=800V ,ID=20A, RGon=10Ω,RGoff=5.6Ω, VGS=-4/+15V , LS=40nH,Tvj=150oC 6 ns tr Rise Time 10 ns td(off) Turn-Off Delay Time 13 ns tf Fall Time 39 ns Eon Turn-On Switching Loss 0.71 mJ Eoff Turn-Off Switching Loss 0.09 mJ td(on) Turn-On Delay Time VDS=800V ,ID=20A, RGon=10Ω,RGoff=5.6Ω, VGS=-4/+15V , LS=40nH,Tvj=175oC 6 ns tr Rise Time 10 ns td(off) Turn-Off Delay Time 13 ns tf Fall Time 39 ns Eon Turn-On Switching Loss 0.72 mJ Eoff Turn-Off Switching Loss 0.09 mJ
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 4/10 B01 Body Diode Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Diode Forward V oltage IS=10A,VGS=-4V , Tvj=25oC 4.65 V IS=10A,VGS=-4V , Tvj=175oC 4.10 Discrete Characteristics TC=25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit RthJC Junction-to-Case (per Mosfet) 0.843 0.927 K/W
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 5/10 B01 Fig 1. MOSFET Output Characteristics Fig 2. MOSFET Output Characteristics Fig 3. MOSFET Output Characteristics Fig 4. MOSFET Transfer Characteristics 0 1 2 3 4 5 6 7 8 ID [A] VDS [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VGS=15V 0 2 4 6 8 10 ID [A] VDS [V] VGS=7V VGS=9V VGS=11V VGS=13V VGS=15V Tvj=25oC 0 2 4 6 8 10 ID [A] VDS [V] VGS=7V VGS=9V VGS=11V VGS=13V VGS=15V Tvj=175oC 1 3 5 7 9 11 ID [A] VGS [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VDS=20V
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 6/10 B01 Fig 5. MOSFET Switching Times as.IDS Fig 6. MOSFET Switching Times as. RG Fig 7. MOSFET Switching Times vs. Tvj Fig 8. Switching Energy Loss vs. IDS 100 0 10 20 30 40 t [ns] ID [A] td(on) tr td(off) tf VDS=800V RGon=10Ω RGoff=5.6Ω VGS=-4/+15V Tvj=175oC 100 0 10 20 30 40 50 60 t [ns] RG [Ω] td(on) tr td(off) tf VDS=800V ID=20A VGS=-4/+15V Tvj=175oC 25 50 75 100 125 150 175 t [ns] Tvj [oC] td(on) tr td(off) tf VDS=800V ID=20A RGon=10Ω RGoff=5.6Ω VGS=-4/+15V 0.5 1.5 0 10 20 30 40 E [mJ] ID [A] Eon Eoff VDS=800V RGon=10Ω RGoff=5.6Ω VGS=-4/+15V Tvj=175oC
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 7/10 B01 Fig 9. Switching Energy Loss vs. RG Fig 10. Switching Energy Loss vs. Tvj Fig 11. Switching Energy Loss vs.VDS Fig 12. Body Diode Characteristics 0.5 1.5 0 10 20 30 40 50 60 E [mJ] RG [Ω] Eon Eoff VDS=800V ID=20A VGS=-4/+15V Tvj=175oC 0.25 0.5 0.75 25 50 75 100 125 150 175 E [mJ] Tvj [oC] Eon Eoff VDS=800V ID=20A RGon=10Ω RGoff=5.6Ω VGS=-4/+15V 0.25 0.5 0.75 600 650 700 750 800 E [mJ] VDS [V] Eon Eoff IC=20A RGon=10Ω RGoff=5.6Ω VGE=-4/+15V Tvj=175oC 0 2 4 6 8 10 IS [A] VSD [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VGS=-4V
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 8/10 B01 Fig 13. MOSFET Transient Thermal Impedance 0.0001 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0509 0.2769 0.2710 0.2442 τi[s]: 0.0730 0.0081 0.0011 0.0002
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 9/10 B01 Circuit Schematic Package Dimensions Dimensions in Millimeters
DM800S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/13/2024 10/10 B01 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsibl e for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.