DM400S12TDRB STARPOWER | Alldatasheet
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SiC power MOSFET Low RDS(on) Low inductance case avoid oscillations ROHS Typical Applications Automotive application Hybrid and electric vehicle Inverter for motor drive Equivalent Circuit Schematic Type Package Marking Shipping DM400S12TDRB TO-247PLUS-4L DM400S12TDRB 30Units/Tube
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 2/10 B01 Absolute Maximum Ratings TC=25oC unless otherwise noted Mosfet Symbol Description Value Unit VDSS Drain-Source V oltage 1200 V VGSSmax Gate-Source V oltage -8/+22 V VGSSop Gate-Source V oltage -4/+15 V ID Drain Current @ Tvj=175oC 64 A PD Maximum Power Dissipation @ Tvj=175oC 268 W Body Diode Symbol Description Value Unit IF Source Current @ Tvj=175oC 50 A Discrete Symbol Description Values Unit Tvjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 3/10 B01 Mosfet Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit RDS(on) Static Drain-Source On-Resistance ID=34A,VGS=15V , Tvj=25oC 40.0 mΩ ID=34A,VGS=15V , Tvj=150oC 50.5 ID=34A,VGS=15V , Tvj=175oC 55.2 VGS(th) Gate-Source Threshold V oltage ID=8.7mA,VDS=VGS, Tvj=25oC 2.75 V IDSS Drain-Source Leakage Current VDS=VDSS,VGS=0V , Tvj=25oC 100 μA IGSS Gate-Source Leakage Current VGS=VGSS,VDS=0V , Tvj=25oC 200 nA RGint Internal Gate Resistance 2.05 Ω Ciss Input Capacitance VGS=0V ,VDS=800V, f=100kHz 3.13 nF Coss Output Capacitance 116 pF Crss Reverse Transfer Capacitance 6.83 pF Qg Total Gate Charge ID=34A,VDS=800V , VGS=-4/+15V 86.6 nC td(on) Turn-On Delay Time VDS=800V ,ID=34A, RG=5.1Ω,LS=40nH, VGS=-4/+15V , Tvj=25oC 23 ns tr Rise Time 9 ns td(off) Turn-Off Delay Time 34 ns tf Fall Time 31 ns Eon Turn-On Switching Loss 0.41 mJ Eoff Turn-Off Switching Loss 0.34 mJ td(on) Turn-On Delay Time VDS=800V ,ID=34A, RG=5.1Ω,LS=40nH, VGS=-4/+15V , Tvj=150oC 22 ns tr Rise Time 9 ns td(off) Turn-Off Delay Time 38 ns tf Fall Time 30 ns Eon Turn-On Switching Loss 0.42 mJ Eoff Turn-Off Switching Loss 0.35 mJ td(on) Turn-On Delay Time VDS=800V ,ID=34A, RG=5.1Ω,LS=40nH, VGS=-4/+15V , Tvj=175oC 22 ns tr Rise Time 9 ns td(off) Turn-Off Delay Time 39 ns tf Fall Time 30 ns Eon Turn-On Switching Loss 0.43 mJ Eoff Turn-Off Switching Loss 0.35 mJ
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 4/10 B01 Body Diode Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VSD Diode Forward V oltage IS=16A,VGS=-4V , Tvj=25oC 4.35 V IS=16A,VGS=-4V , Tvj=175oC 3.85 Discrete Characteristics TC=25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit RthJC Junction-to-Case (per Mosfet) 0.507 0.558 K/W
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 5/10 B01 Fig 1. MOSFET Output Characteristics Fig 2. MOSFET Output Characteristics Fig 3. MOSFET Output Characteristics Fig 4. MOSFET Transfer Characteristics 120 0 1 2 3 4 5 6 7 8 ID [A] VDS [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VGS=15V 120 0 2 4 6 8 10 ID [A] VDS [V] VGS=7V VGS=9V VGS=11V VGS=13V VGS=15V Tvj=25oC 120 0 2 4 6 8 10 ID [A] VDS [V] VGS=7V VGS=9V VGS=11V VGS=13V VGS=15V Tvj=175oC 120 1 3 5 7 9 11 ID [A] VGS [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VDS=20V
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 6/10 B01 Fig 5. MOSFET Switching Times as.IDS Fig 6. MOSFET Switching Times as. RG Fig 7. MOSFET Switching Times vs. Tvj Fig 8. Switching Energy Loss vs. IDS 100 0 10 20 30 40 50 60 70 t [ns] ID [A] td(on) tr td(off) tf VDS=800V RG=5.1Ω VGS=-4/+15V Tvj=175oC 100 120 140 0 5 10 15 20 25 30 35 t [ns] RG [Ω] td(on) tr td(off) tf VDS=800V ID=34A VGS=-4/+15V Tvj=175oC 25 50 75 100 125 150 175 t [ns] Tvj [oC] td(on) tr td(off) tf VDS=800V ID=34A RG=5.1Ω VGS=-4/+15V 0.2 0.4 0.6 0.8 0 10 20 30 40 50 60 70 E [mJ] ID [A] Eon Eoff VDS=800V RG=5.1Ω VGS=-4/+15V Tvj=175oC
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 7/10 B01 Fig 9. Switching Energy Loss vs. RG Fig 10. Switching Energy Loss vs. Tvj Fig 11. Switching Energy Loss vs.VDS Fig 12. Body Diode Characteristics 0.5 1.5 0 5 10 15 20 25 30 35 E [mJ] RG [Ω] Eon Eoff VDS=800V ID=34A VGS=-4/+15V Tvj=175oC 0.1 0.2 0.3 0.4 0.5 25 50 75 100 125 150 175 E [mJ] Tvj [oC] Eon Eoff VDS=800V ID=34A RG=5.1Ω VGS=-4/+15V 0.1 0.2 0.3 0.4 0.5 600 650 700 750 800 E [mJ] VDS [V] Eon Eoff IC=34A RG=5.1Ω VGE=-4/+15V Tvj=175oC 120 0 2 4 6 8 10 IS [A] VSD [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VGS=-4V
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 8/10 B01 Fig 13. MOSFET Transient Thermal Impedance 0.0001 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0306 0.1665 0.1630 0.1469 τi[s]: 0.0730 0.0081 0.0011 0.0002
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 9/10 B01 Circuit Schematic Package Dimensions Dimensions in Millimeters
DM400S12TDRB SiC MOSFET Discrete ©2024 STARPOWER Semiconductor Ltd. 11/21/2024 10/10 B01 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.