DG75A08TALS

DG75A08TALS STARPOWER | Alldatasheet

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Technical content

Features

 Low VCE(sat) IGBT technology  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD Typical Applications  Solar power  UPS  EV PTC Equivalent Circuit Schematic Type Package Marking Shipping DG75A08TALS TO-247-3L DG75A08TALS 30Units/Tube

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 2/12 B01 Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol Description Values Unit VCES Collector-Emitter V oltage 750 V VGES Gate-Emitter V oltage Transient Gate-Emitter V oltage ±20 ±30 V IC Collector Current @ TC=25oC @ TC=100oC 100(1) 75 A ICRM Repetitive Peak Collector Current tp limited by Tvjop 225 A PD Maximum Power Dissipation @ Tvj=175oC 340 W Diode Symbol Description Values Unit VRRM Repetitive Peak Reverse V oltage 750 V IF Diode Continuous Forward Current @ TC=25oC @ TC=100oC 100(1) 75 A IFRM Repetitive Peak Forward Current tp limited by Tvjop 225 A Discrete Symbol Description Values Unit Tvjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC M Mounting Torque, Screw M3 0.6 N.m (1) limited by bondwire

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 3/12 B01 IGBT Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation V oltage IC=75A,VGE=15V , Tvj=25oC 1.30 1.75 V IC=75A,VGE=15V , Tvj=150oC 1.35 IC=75A,VGE=15V , Tvj=175oC 1.35 VGE(th) Gate-Emitter Threshold V oltage IC=1.5mA,VCE=VGE, Tvj=25oC 3.5 4.0 4.5 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V , Tvj=25oC 200 uA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V , Tvj=25oC 100 nA RGint Internal Gate Resistance 0 Ω Cies Input Capacitance VCE=25V ,f=100kHz, VGE=0V 3.76 nF Coes Output Capacitance 0.22 nF Cres Reverse Transfer Capacitance 0.03 nF QG Gate Charge VGE=-15…+15V 0.27 μC td(on) Turn-On Delay Time VCC=400V ,IC=75A, RG=7.5Ω,LS=40nH, VGE=±15V ,Tvj=25 oC 34 ns tr Rise Time 80 ns td(off) Turn-Off Delay Time 192 ns tf Fall Time 187 ns Eon Turn-On Switching Loss 4.02 mJ Eoff Turn-Off Switching Loss 3.73 mJ td(on) Turn-On Delay Time VCC=400V ,IC=75A, RG=7.5Ω,LS=40nH, VGE=±15V ,Tvj=150 oC 37 ns tr Rise Time 86 ns td(off) Turn-Off Delay Time 272 ns tf Fall Time 400 ns Eon Turn-On Switching Loss 4.85 mJ Eoff Turn-Off Switching Loss 7.30 mJ td(on) Turn-On Delay Time VCC=400V ,IC=75A, RG=7.5Ω,LS=40nH, VGE=±15V ,Tvj=175 oC 39 ns tr Rise Time 87 ns td(off) Turn-Off Delay Time 285 ns tf Fall Time 452 ns Eon Turn-On Switching Loss 5.10 mJ Eoff Turn-Off Switching Loss 8.14 mJ

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 4/12 B01 Diode Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units VF Diode Forward V oltage IC=75A,VGE=0V ,Tvj=25oC 1.55 2.00 V IC=75A,VGE=0V ,Tvj=150oC 1.50 IC=75A,VGE=0V ,Tvj=175oC 1.45 trr Diode Reverse Recovery Time VR=400V ,IF=75A, -di/dt=630A/μs,Ls=40nH, VGE=-15V ,Tvj=25oC 140 ns Qr Recovered Charge 2.63 μC IRM Peak Reverse Recovery Current 25 A Erec Reverse Recovery Energy 0.60 mJ trr Diode Reverse Recovery Time VR=400V ,IF=75A, -di/dt=620A/μs,Ls=40nH, VGE=-15V ,Tvj=150oC 215 ns Qr Recovered Charge 5.37 μC IRM Peak Reverse Recovery Current 39 A Erec Reverse Recovery Energy 1.34 mJ trr Diode Reverse Recovery Time VR=400V ,IF=75A, -di/dt=620A/μs,Ls=40nH, VGE=-15V ,Tvj=175oC 225 ns Qr Recovered Charge 6.21 μC IRM Peak Reverse Recovery Current 43 A Erec Reverse Recovery Energy 1.56 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.440

0.417 K/W

RthJA Junction-to-Ambient 40 K/W

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 5/12 B01 Fig 1. RBSOA Fig 2. IGBT Output Characteristics Fig 3. IGBT Output Characteristics Fig 4. IGBT Output Characteristics 100 150 200 250 0 200 400 600 800 IC [A] VCE [V] RG=7.5Ω VGE=±15V Tvj=175oC 100 150 0 0.5 1 1.5 2 IC [A] VCE [V] VGE=10V VGE=12V VGE=15V VGE=17V VGE=20V Tvj=25oC 100 150 0 0.5 1 1.5 2 2.5 IC [A] VCE [V] VGE=10V VGE=12V VGE=15V VGE=17V VGE=20V Tvj=175oC 100 150 0 0.5 1 1.5 2 2.5 3 IC [A] VCE [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VGE=15V

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 6/12 B01 Fig 5. IGBT Transfer Characteristics Fig 6. Collector-emitter saturation voltage vs. Tvj Fig 7. IGBT Switching Times vs. Ic Fig 8. IGBT Switching Times vs.RG 100 150 3 4 5 6 7 8 9 IC [A] VGE [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VCE=20V 0.5 1.5 25 50 75 100 125 150 175 VCEsat [V] Tvj [℃] Ic=37.5A Ic=75A Ic=150A VGE=15V 200 400 600 0 30 60 90 120 150 t [ns] IC [A] td(on) tr td(off) tf VCC=400V RG=7.5Ω VGE=±15V Tvj=175oC 100 200 300 400 500 600 700 0 25 50 75 t [ns] RG [Ω] td(on) tr td(off) tf VCC=400V IC=75A VGE=±15V Tvj=175oC

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 7/12 B01 Fig 9. IGBT Switching Times vs. Tvj Fig 10. Switching Energy Loss vs. IC Fig 11. Switching Energy Loss vs. RG Fig 12. Switching Energy Loss vs. Tvj 100 200 300 400 500 25 50 75 100 125 150 175 t [ns] Tvj [oC] td(on) tr td(off) tf VCC=400V IC=75A RG=7.5Ω VGE=±15V 0 30 60 90 120 150 E [mJ] IC [A] Eon Eoff Erec VCC=400V RG=7.5Ω VGE=±15V Tvj=175oC 0 25 50 75 E [mJ] RG [Ω] Eon Eoff Erec VCC=400V IC=75A VGE=±15V Tvj=175oC 25 50 75 100 125 150 175 E [mJ] Tvj [oC] Eon Eoff Erec VCC=400V IC=75A RG=7.5Ω VGE=±15V

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 8/12 B01 Fig 13. Switching Energy Loss vs.VCE Fig 14. IGBT Gate Charge Characteristic Fig 15. IGBT Capacity Charcteristic Fig 16. IGBT Transient Thermal Impedance 200 250 300 350 400 E [mJ] VCE [V] Eon Eoff Erec IC=75A RG=7.5Ω VGE=±15V Tvj=175oC -15 -10 0 0.1 0.2 0.3 VGE [V] QG [uC] VCC=600V IC=40A VCC=400V IC=75A 0.001 0.01 0.1 0 20 40 60 80 100 C [nF] VCE [V] Cies Coes Cres VGE=0V f=100kHz Tvj=25oC 0.0001 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0484 0.1488 0.1524 0.0904 τi[s]: 0.1730 0.0275 0.0026 0.0003

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 9/12 B01 Fig 17. Diode Forward Characteristics Fig 18. Diode Forward V oltage vs. Tvj Fig 19. Reverse Recovery Time vs. diF/dt Fig 20. Reverse Recovery Charge vs. diF/dt 100 150 0 0.5 1 1.5 2 2.5 IF [A] VF [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ 1.5 2.5 25 50 75 100 125 150 175 VF [V] Tvj [℃] IF=37.5A IF=75A IF=150A 220 230 240 250 260 270 280 290 530 550 570 590 610 630 trr [ns] diF/dt [A/us] Tvj=175℃ VR=400V IF=75A 5.8 5.9 6.1 6.2 6.3 530 550 570 590 610 630 Qrr [uC] diF/dt [A/us] Tvj=175℃ VR=400V IF=75A

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 10/12 B01 Fig 21. Reverse Recovery Current vs. diF/dt Fig 22. Reverse Energy Losses vs. diF/dt Fig 23. diF/dt vs. Rg Fig 24. Diode Transient Thermal Impedance 530 550 570 590 610 630 Irr [A] diF/dt [A/us] Tvj=175℃ VR=400V IF=75A 1.2 1.3 1.4 1.5 1.6 530 550 570 590 610 630 Erec [mJ] diF/dt [A/us] Tvj=175℃ VR=400V IF=75A 530 550 570 590 610 630 0 25 50 75 di/dt [A/us] Rg [Ω] Tvj=175℃ VR=400V IF=75A 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.12724 0.10461 0.08721 0.09794 τi[s]: 0.00340 0.00354 0.00031 0.00002

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 11/12 B01 Circuit Schematic Package Dimensions Dimensions in Millimeters

©2024 STARPOWER Semiconductor Ltd. 10/29/2024 12/12 B01 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the complet eness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please con tact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangero us substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.