DG10X06T1

DG10X06T1 STARPOWER | Alldatasheet

Document overview

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Technical content

Features

 Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD  Lead free package Typical Applications  Inverter for motor drive  AC and DC servo drive amplifier  Uninterruptible power supply Equivalent Circuit Schematic

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 2/9 A02 Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol Description Value Unit VCES Collector-Emitter V oltage 600 V VGES Gate-Emitter V oltage ±20 V IC Collector Current @ TC=25oC @ TC=100oC 19 A ICM Pulsed Collector Current tp limited by Tjmax 30 A PD Maximum Power Dissipation @ Tj=175oC 196 W Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse V oltage 600 V IF Diode Continuous Forward Current 25 A IFM Diode Maximum Forward Current tp limited by Tjmax 30 A Discrete Symbol Description Values Unit Tjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC M Mounting Torque, Screw M3 0.6 N.m

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 3/9 A02 IGBT Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation V oltage IC=10A,VGE=15V , Tj=25oC 1.45 1.90 V IC=10A,VGE=15V , Tj=125oC 1.60 IC=10A,VGE=15V , Tj=150oC 1.70 VGE(th) Gate-Emitter Threshold V oltage IC=0.16mA,VCE=VGE, Tj=25oC 5.2 5.8 6.5 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V , Tj=25oC 1.0 mA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V , Tj=25oC 400 nA RGint Internal Gate Resistance 0 Ω Cies Input Capacitance VCE=25V ,f=1MHz, VGE=0V 1.16 nF Cres Reverse Transfer Capacitance 0.02 nF QG Gate Charge VGE=-15…+15V 0.07 μC td(on) Turn-On Delay Time VCC=300V ,IC=10A, RG=27Ω,VGE=± 15V , Tj=25oC 10 ns tr Rise Time 7 ns td(off) Turn-Off Delay Time 80 ns tf Fall Time 68 ns Eon Turn-On Switching Loss 0.11 mJ Eoff Turn-Off Switching Loss 0.19 mJ td(on) Turn-On Delay Time VCC=300V ,IC=10A, RG=27Ω,VGE=± 15V , Tj=125oC 10 ns tr Rise Time 10 ns td(off) Turn-Off Delay Time 96 ns tf Fall Time 104 ns Eon Turn-On Switching Loss 0.16 mJ Eoff Turn-Off Switching Loss 0.24 mJ td(on) Turn-On Delay Time VCC=300V ,IC=10A, RG=27Ω,VGE=± 15V , Tj=150oC 10 ns tr Rise Time 11 ns td(off) Turn-Off Delay Time 100 ns tf Fall Time 108 ns Eon Turn-On Switching Loss 0.18 mJ Eoff Turn-Off Switching Loss 0.26 mJ ISC SC Data tP≤6μs,VGE=15V , Tj=150oC,VCC=360V , VCEM≤600V 50 A

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 4/9 A02 Diode Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units VF Diode Forward V oltage IC=10A,VGE=0V ,Tj=25oC 1.20 1.65 V IC=10A,VGE=0V ,Tj=125oC 1.10 IC=10A,VGE=0V ,Tj=150oC 1.10 Qr Recovered Charge VR=300V ,IF=10A, -di/dt=1600A/μs,VGE=-15V Tj=25oC 0.55 μC IRM Peak Reverse Recovery Current 19.8 A Erec Reverse Recovery Energy 0.12 mJ Qr Recovered Charge VR=300V ,IF=10A, -di/dt=1600A/μs,VGE=-15V Tj=125oC 0.84 μC IRM Peak Reverse Recovery Current 20.9 A Erec Reverse Recovery Energy 0.22 mJ Qr Recovered Charge VR=300V ,IF=10A, -di/dt=1600A/μs,VGE=-15V Tj=150oC 1.21 μC IRM Peak Reverse Recovery Current 23.1 A Erec Reverse Recovery Energy 0.29 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.766

1.340 K/W

RthJA Junction-to-Ambient 62 K/W

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 5/9 A02 Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT-inverter Transfer Characteristics Fig 3. IGBT-inverter Switching Loss vs. IC Fig 4. IGBT-inverter Switching Loss vs. RG 0 0.5 1 1.5 2 2.5 3 IC [A] VCE [V] Tj=25℃ Tj=125℃ Tj=150℃ VGE=15V 5 6 7 8 9 10 11 12 IC [A] VGE [V] Tj=25℃ Tj=125℃ Tj=150℃ VCE=20V 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 E [mJ] IC [A] Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ VCC=300V RG=27Ω VGE=±15V 0.2 0.4 0.6 0.8 0 50 100 150 200 250 300 E [mJ] RG [Ω] Eon,Tj=125℃ Eoff,Tj=125℃ Eon,Tj=150℃ Eoff,Tj=150℃ VCC=300V IC=10A VGE=±15V

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 6/9 A02 Fig 5. IGBT-inverter RBSOA Fig 6. IGBT-inverter Transient Thermal Impedance Fig 7. Diode-inverter Forward Characteristics Fig 8. Diode-inverter Switching Loss vs. IF 0 150 300 450 600 750 IC [A] VCE [V] RG=27Ω VGE=±15V Tj=150oC 0.01 0.1 0.0001 0.001 0.01 0.1 1 ZthJC [K/W] t [s] IGBT i: 1 2 3 4 ri[K/W]: 0.2704 0.2264 0.2046 0.0646 τi[s]: 0.1100 0.0156 0.00135 0.000151 IF [A] VF [V] Tj=25℃ Tj=125℃ Tj=150℃ 0.1 0.2 0.3 0.4 0.5 0 5 10 15 20 E [mJ] IF [A] Erec,Tj=125℃ Erec,Tj=150℃ VCC=300V RG=27Ω VGE=-15V

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 7/9 A02 Fig 9. Diode-inverter Switching Loss vs. RG Fig 10. Diode-inverter Transient Thermal Impedance 0.1 0.2 0.3 0.4 0.5 0 50 100 150 200 250 300 E [mJ] RG [Ω] Erec,Tj=125℃ Erec,Tj=150℃ VCC=300V IF=10A VGE=-15V 0.1 0.0001 0.001 0.01 0.1 1 ZthJC [K/W] t [s] Diode i: 1 2 3 4 ri[K/W]: 0.2586 0.3574 0.4490 0.2750 τi[s]: 0.0723 0.00813 0.00109 0.000155

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 8/9 A02 Circuit Schematic Package Dimensions Dimensions in Millimeters

©2020 STARPOWER Semiconductor Ltd. 10/2/2020 9/9 A02 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical department s will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data giv en in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.