DG120X07T2 STARPOWER | Alldatasheet
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Technical content
Features
Low VCE(sat) Trench IGBT technology Low switching loss Maximum junction temperature 175oC VCE(sat) with positive temperature coefficient Fast & soft reverse recovery anti-parallel FWD Lead free package Typical Applications Inverter for motor drive AC and DC servo drive amplifier Uninterruptible power supply Equivalent Circuit Schematic
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 2/9 B01 Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol Description Value Unit VCES Collector-Emitter V oltage 650 V VGES Gate-Emitter V oltage ±20 V IC Collector Current @ TC=25oC @ TC=135oC 240 120 A ICM Pulsed Collector Current tp limited by Tjmax 360 A PD Maximum Power Dissipation @ Tj=175oC 893 W Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse V oltage 650 V IF Diode Continuous Forward Current @ TC=25oC @ TC=80oC 177 120 A IFM Diode Maximum Forward Current tp limited by Tjmax 360 A Discrete Symbol Description Values Unit Tjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 3/9 B01 IGBT Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation V oltage IC=120A,VGE=15V , Tj=25oC 1.40 1.85 V IC=120A,VGE=15V , Tj=150oC 1.70 IC=120A,VGE=15V , Tj=175oC 1.75 VGE(th) Gate-Emitter Threshold V oltage IC=1.92mA,VCE=VGE, Tj=25oC 5.1 5.8 6.5 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V , Tj=25oC 250 uA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V , Tj=25oC 200 nA RGint Internal Gate Resistance / Ω Cies Input Capacitance VCE=25V ,f=100kHz, VGE=0V 14.1 nF Cres Reverse Transfer Capacitance 0.42 nF QG Gate Charge VGE=-15…+15V 0.86 uC td(on) Turn-On Delay Time VCC=300V ,IC=120A, RG=7.5Ω,VGE=± 15V , LS=40nH,Tj=25oC 68 ns tr Rise Time 201 ns td(off) Turn-Off Delay Time 166 ns tf Fall Time 54 ns Eon Turn-On Switching Loss 7.19 mJ Eoff Turn-Off Switching Loss 2.56 mJ td(on) Turn-On Delay Time VCC=300V ,IC=120A, RG=7.5Ω,VGE=± 15V , LS=40nH,Tj=150oC 70 ns tr Rise Time 207 ns td(off) Turn-Off Delay Time 186 ns tf Fall Time 106 ns Eon Turn-On Switching Loss 7.70 mJ Eoff Turn-Off Switching Loss 2.89 mJ td(on) Turn-On Delay Time VCC=300V ,IC=120A, RG=7.5Ω,VGE=± 15V , LS=40nH,Tj=175oC 71 ns tr Rise Time 211 ns td(off) Turn-Off Delay Time 195 ns tf Fall Time 139 ns Eon Turn-On Switching Loss 7.80 mJ Eoff Turn-Off Switching Loss 2.98 mJ ISC SC Data tP≤6μs,VGE=15V , Tj=150 oC,VCC=300V , VCEM≤650V 600 A
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 4/9 B01 Diode Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward V oltage IF=120A,VGE=0V ,Tj=25oC 1.65 2.10 V IF=120A,VGE=0V ,Tj=150oC 1.60 IF=120A,VGE=0V ,Tj=175oC 1.60 trr Diode Reverse Recovery Time VR=300V ,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=25oC 184 ns Qr Recovered Charge 1.65 μC IRM Peak Reverse Recovery Current 17.2 A Erec Reverse Recovery Energy 0.23 mJ trr Diode Reverse Recovery Time VR=300V ,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=150oC 221 ns Qr Recovered Charge 3.24 μC IRM Peak Reverse Recovery Current 23.1 A Erec Reverse Recovery Energy 0.53 mJ trr Diode Reverse Recovery Time VR=300V ,IF=120A, -di/dt=450A/μs,VGE=-15V LS=40nH,Tj=175oC 246 ns Qr Recovered Charge 3.98 μC IRM Peak Reverse Recovery Current 26.8 A Erec Reverse Recovery Energy 0.64 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.168
0.369 K/W
RthJA Junction-to-Ambient 40 K/W
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 5/9 B01 Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT Output Characteristics Fig 3. IGBT Output Characteristics Fig 4. IGBT Transfer Characteristics 120 160 200 240 0 0.5 1 1.5 2 2.5 3 IC [A] VCE [V] Tj=25℃ Tj=150℃ Tj=175℃ VGE=15V 120 160 200 240 0 1 2 3 4 IC [A] VCE [V] VGE=8V VGE=9V VGE=11V VGE=13V VGE=15V Tj=25oC 120 160 200 240 0 1 2 3 4 IC [A] VCE [V] VGE=8V VGE=9V VGE=11V VGE=13V VGE=15V Tj=175oC 120 160 200 240 5 6 7 8 9 10 11 12 IC [A] VGE [V] Tj=25℃ Tj=150℃ Tj=175℃ VCE=20V
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 6/9 B01 Fig 5. IGBT Switching Loss vs. IC Fig 6. IGBT Switching Loss vs. RG Fig 7. RBSOA Fig 8. IGBT Transient Thermal Impedance 0 40 80 120 160 200 240 E [mJ] IC [A] Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ VCC=300V RG=7.5Ω VGE=±15V 0 15 30 45 60 75 E [mJ] RG [Ω] Eon Tj=150℃ Eoff Tj=150℃ Eon Tj=175℃ Eoff Tj=175℃ VCC=300V IC=120A VGE=±15V 120 160 200 240 280 320 360 400 0 100 200 300 400 500 600 700 800 IC [A] VCE [V] RG=7.5Ω VGE=±15V Tj=175oC 0.0001 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0248 0.0341 0.1063 0.0028 τi[s]: 0.0002 0.0016 0.0157 0.2126
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 7/9 B01 Fig 9. Diode Forward Characteristics Fig 10. Diode Switching Loss vs. IF Fig 11. Diode Switching Loss vs. RG Fig 12. Diode Transient Thermal Impedance 120 160 200 240 0 0.5 1 1.5 2 2.5 3 IF [A] VF [V] Tj=25℃ Tj=150℃ Tj=175℃ 0.25 0.5 0.75 0 40 80 120 160 200 240 E [mJ] IF [A] Erec Tj=150℃ Erec Tj=175℃ VCC=300V RG=7.5Ω VGE=-15V 0.25 0.5 0.75 0 15 30 45 60 75 E [mJ] RG [Ω] Erec Tj=150℃ Erec Tj=175℃ VCC=300V IF=120A VGE=-15V 0.0001 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0660 0.1039 0.1941 0.0050 τi[s]: 0.0002 0.0026 0.0150 0.2132
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 8/9 B01 Circuit Schematic Package Dimensions Dimensions in Millimeters
©2021 STARPOWER Semiconductor Ltd. 3/11/2021 9/9 B01 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of th e data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specificall y interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.