DG140A12TCFS STARPOWER | Alldatasheet

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Technical content

Features

 Low VCE(sat) Fast IGBT technology  Low switching loss  Maximum junction temperature 175oC  VCE(sat) with positive temperature coefficient  Fast & soft reverse recovery anti-parallel FWD Typical Applications  Solar power  UPS  3-level-application Equivalent Circuit Schematic

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 2/12 B01 Absolute Maximum Ratings TC=25oC unless otherwise noted IGBT Symbol Description Value Unit VCES Collector-Emitter V oltage 1200 V VGES Gate-Emitter V oltage ± 20 V IC Collector Current @ TC=25oC @ TC=100oC 175(1) 140 A ICM Pulsed Collector Current tp limited by Tvjmax 560 A PD Maximum Power Dissipation @ Tvj=175oC 937 W Diode Symbol Description Value Unit VRRM Repetitive Peak Reverse V oltage 1200 V IF Diode Continuous Forward Current @ TC=25oC @ TC=100oC 175(1) 140 A IFM Diode Maximum Forward Current tp limited by Tvjmax 560 A Discrete Symbol Description Values Unit Tvjop Operating Junction Temperature -40 to +175 oC TSTG Storage Temperature Range -55 to +150 oC TS Soldering Temperature,1.6mm from case for 10s 260 oC M Mounting Torque, Screw M3 0.6 N.m (1) limited by bondwire

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 3/12 B01 IGBT Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VCE(sat) Collector to Emitter Saturation V oltage IC=140A,VGE=15V , Tvj=25oC 1.75 2.20 V IC=140A,VGE=15V , Tvj=150oC 2.00 IC=140A,VGE=15V , Tvj=175oC 2.05 VGE(th) Gate-Emitter Threshold V oltage IC=2.8mA,VCE=VGE, Tvj=25oC 4.0 4.8 5.5 V ICES Collector Cut-Off Current VCE=VCES,VGE=0V , Tvj=25oC 200 μA IGES Gate-Emitter Leakage Current VGE=VGES,VCE=0V , Tvj=25oC 100 nA RGint Internal Gate Resistance 0 Ω Cies Input Capacitance VCE=25V ,f=100kHz, VGE=0V 11.0 nF Cres Reverse Transfer Capacitance 0.43 nF Coes Output Capacitance 0.23 nF QG Gate Charge VGE=-8…+15V 0.48 μC td(on) Turn-On Delay Time VCC=600V ,IC=140A, RGON=5.1Ω, RGOFF=1.0Ω, VGE=-8/+15V , Ls=40nH,Tvj=25oC 28 ns tr Rise Time 145 ns td(off) Turn-Off Delay Time 76 ns tf Fall Time 95 ns Eon Turn-On Switching Loss 17.9 mJ Eoff Turn-Off Switching Loss 5.4 mJ td(on) Turn-On Delay Time VCC=600V ,IC=140A, RGON=5.1Ω, RGOFF=1.0Ω, VGE=-8/+15V , Ls=40nH,Tvj=150oC 30 ns tr Rise Time 150 ns td(off) Turn-Off Delay Time 124 ns tf Fall Time 98 ns Eon Turn-On Switching Loss 21.9 mJ Eoff Turn-Off Switching Loss 7.3 mJ td(on) Turn-On Delay Time VCC=600V ,IC=140A, RGON=5.1Ω, RGOFF=1.0Ω, VGE=-8/+15V , Ls=40nH,Tvj=175oC 31 ns tr Rise Time 155 ns td(off) Turn-Off Delay Time 132 ns tf Fall Time 100 ns Eon Turn-On Switching Loss 22.8 mJ Eoff Turn-Off Switching Loss 7.9 mJ

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 4/12 B01 Diode Characteristics TC=25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit VF Diode Forward V oltage IF=140A,VGE=0V ,Tvj=25oC 1.70 2.15 V IF=140A,VGE=0V ,Tvj=150oC 1.70 IF=140A,VGE=0V ,Tvj=175oC 1.65 Qr Recovered Charge VR=600V ,IF=140A, -di/dt=650A/μs,VGE=-8V Ls=40nH,Tvj=25oC 8.6 μC trr Recovered Time 261 ns IRM Peak Reverse Recovery Current 49 A Erec Reverse Recovery Energy 2.8 mJ Qr Recovered Charge VR=600V ,IF=140A, -di/dt=640A/μs,VGE=-8V Ls=40nH,Tvj=150oC 18.3 μC trr Recovered Time 364 ns IRM Peak Reverse Recovery Current 81 A Erec Reverse Recovery Energy 6.3 mJ Qr Recovered Charge VR=600V ,IF=140A, -di/dt=630A/μs,VGE=-8V Ls=40nH,Tvj=175oC 19.5 μC trr Recovered Time 379 ns IRM Peak Reverse Recovery Current 84 A Erec Reverse Recovery Energy 6.7 mJ Discrete Characteristics TC=25oC unless otherwise noted Symbol Parameter Min. Typ. Max. Unit RthJC Junction-to-Case (per IGBT) Junction-to-Case (per Diode) 0.160

0.200 K/W

RthJA Junction-to-Ambient 40 K/W

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 5/12 B01 Fig 1. IGBT-inverter Output Characteristics Fig 2. IGBT Output Characteristics Fig 3. IGBT Output Characteristics Fig 4. IGBT Transfer Characteristics 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 3.5 IC [A] VCE [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VGE=15V 120 160 200 240 280 0 0.5 1 1.5 2 2.5 3 IC [A] VCE [V] VGE=10V VGE=12V VGE=15V VGE=17V VGE=20V Tvj=25oC 120 160 200 240 280 0 1 2 3 4 IC [A] VCE [V] VGE=10V VGE=12V VGE=15V VGE=17V VGE=20V Tvj=175oC 120 160 200 240 280 3 4 5 6 7 8 9 IC [A] VGE [V] Tvj=25℃ Tvj=150℃ Tvj=175℃ VCE=20V

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 6/12 B01 Fig 5. IGBT Switching Times as.IC Fig 6. IGBT Switching Times as. RG Fig 7. IGBT Switching Times vs. Tvj Fig 8. Switching Energy Loss vs. IC 120 180 240 300 360 0 40 80 120 160 200 240 280 t [ns] IC [A] td(on) tr td(off) tf VCC=600V RGON=5.1Ω RGOFF=1.0Ω VGE=-8/+15V Tvj=175oC 120 150 180 210 0 4 8 12 16 20 t [ns] RG [Ω] td(on) tr td(off) tf VCC=600V IC=140A VGE=-8/+15V Tvj=175oC 120 150 180 25 50 75 100 125 150 175 t [ns] Tvj [oC] td(on) tr td(off) tf VCC=600V IC=140A RGON=5.1Ω RGOFF=1.0Ω VGE=-8/+15V 0 40 80 120 160 200 240 280 E [mJ] IC [A] Eon Eoff Erec VCC=600V RGON=5.1Ω RGOFF=1.0Ω VGE=-8/+15V Tvj=175oC

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 7/12 B01 Fig 9. Switching Energy Loss vs. RG Fig 10. Switching Energy Loss vs. Tvj Fig 11. Switching Energy Loss vs. VCE Fig 12 . IGBT Gate Charge vs. VCE 0 4 8 12 16 20 E [mJ] RG [Ω] Eon Eoff Erec VCC=600V IC=140A VGE=-8/+15V Tvj=175oC 25 50 75 100 125 150 175 E [mJ] Tvj [oC] Eon Eoff Erec VCC=600V IC=140A RGON=5.1Ω RGOFF=1.0Ω VGE=-8/+15V 1.5 6.5 11.5 16.5 21.5 26.5 31.5 600 650 700 750 800 E [mJ] VCE [V] Eon Eoff Erec IC=140A RGON=5.1Ω RGOFF=1.0Ω VGE=-8/+15V Tvj=175oC VGE [V] QG [uC] VCC=600V IC=40A VCC=600V IC=140A

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 8/12 B01 Fig 13. IGBT Capacity Charcteristic Fig 14 . RBSOA Fig 15. IGBT Transient Thermal Impedance Fig 16. Diode Forward Characteristics 0.01 0.1 100 0 20 40 60 80 100 C [nF] VCE [V] Cies Coes Cres VGE=0V f=100kHz Tvj=25oC 100 200 300 400 500 600 0 300 600 900 1200 1500 IC [A] VCE [V] RGON=5.1Ω RGOFF=1.0Ω VGE=-8/+15V Tvj=175oC 0.0001 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0360 0.0547 0.0650 0.0043 τi[s]: 0.0003 0.0035 0.0171 0.2630 120 160 200 240 280 0 0.5 1 1.5 2 2.5 IF [A] VF [V] Tvj=25℃ Tvj=150℃ Tvj=175℃

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 9/12 B01 Fig 17. Reverse Recovery Time vs. diF/dt Fig 18. Reverse Recovery Charge vs. diF/dt Fig 19. Reverse Recovery Current vs. diF/dt Fig 20. Reverse Energy Losses vs. diF/dt 360 390 420 450 480 400 480 560 640 trr [ns] diF/dt [A/us] Tvj=175℃ VR=600V IF=140A 400 480 560 640 Qrr [uC] diF/dt [A/us] Tvj=175℃ VR=600V IF=140A 400 480 560 640 Irr [A] diF/dt [A/us] Tvj=175℃ 4.8 5.2 5.6 6.4 6.8 400 480 560 640 Erec [mJ] diF/dt [A/us] Tvj=175℃ VR=600V IF=140A

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 10/12 B01 Fig 21. Diode Transient Thermal Impedance 0.000001 0.00001 0.0001 0.001 0.01 0.1 0.000001 0.0001 0.01 1 ZthJC [K/W] t [s] single pulse D=0.01 D=0.02 D=0.05 D=0.1 D=0.2 D=0.5 i: 1 2 3 4 ri[K/W]: 0.0003 0.0027 0.0151 0.1819 τi[s]: 0.0003 0.0026 0.0148 0.1780

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 11/12 B01 Circuit Schematic Package Dimensions Dimensions in Millimeters

DG140A12TCFS IGBT Discrete ©2023 STARPOWER Semiconductor Ltd. 12/15/2023 12/12 B01 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved.