CR5AS HAOPIN | Alldatasheet
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UnitSYMBOL PARAMETER Value VDRM 400 600 CR5AS-8 CR5AS-12 V ITR M S 5 A ITSM 90 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Simplified outlineSymbol http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs CR5ASTM HPM
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. a g k Cathode anode gate anode TO-252 123 SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to am bient In free air 70 K/W- - Rth j-c Thermal resistance Junction to mounting base /W3.0- -
Limiting values in accordance with the Maximum system(IEC 134) 2/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs SYMBOL PARAMETER CONDITIONS MIN Value UNIT SYMBOL CONDITIONS MIN VRRM IT(RMS) IT(AV) Repetitive peak reverse voltage RMS on-state current Average on-state current V IFGM Peak gate forward current - 400 600 CR5AS-8 CR5AS-12 T =25 C unless otherwise statedJ O Static characteristics IGT VTM V V GT GD I I DRM RRM Gate trigger voltage Gate non-trigger voltage Gate trigger current On-state voltage Repetitive peak off-state current Repetitive peak veverse current Tj=125 ,V applied,R =220 Tj=125 ,V applied DRM GK RRM UNITMAXTYP 1.8- - - - 3.5 2.0 2.0 mA mA Tj=25 ,VD=6V,IT=0.1A Tj=25 ,VD=6V,IT=0.1A Tj=125 ,VD=1/2VDRM,RGK=220 Tc=25 ,itm=15A,instantaneous value Tj=25 ,VD=12V RGK=220 - - 0.8 200 0.1 V V V A A A A 7.8 0.3 90ITSM It I t for fusing Tstg Tj PGM Surge on-state current Average gate power dissipation Peak gate power dissipation Storage temperature Junction temperature Value corresponding to 1 cycle of half wave 60Hz,surge on-state current 60Hz sine half wave 1 full cycle,peak value,non-repetitive Commercial frequency,sine half wave, 180 conduction.Tc=88 o A - 0.5 125 125 0.1 -40 -40 W W As IH Holding current PG(AV) PARAMETER Dynamic Characteristics D/ d tVD tgt tg Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time 100 100 V =67% V ;Tj=125 ;DM DRM(max) Exponential wave form;R =100GK I =10A;V =V ;TM D DRM(max) I= 5 m A ;G Dl /dt=0.2A/ sG dv /dt=2V/ s;R =1kDG K s s V/ s V =67% V ;Tj=125 ;I =12A V =24V;dI /dt=10A/ S DM DRM(max) TM RT M CR5AS
¾http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs CR5AS
¾http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs CR5AS
¾http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs CR5AS
4/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MECHANICAL DATA Dimensions in mm Net Mass: 0.45g TO-252(DPAK) CR5AS