CR05AS SUNTAC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
D MCR100 Series i Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, line-powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic S OT-89 package which is readily adaptable for use in automatic insertion equipment.
- Sensitive Gate Allows Triggering by Microcontrollers and Other Logic Circuits
- Blocking V oltage to 800 V
- On−State Current Rating of 0.8 Amperes RMS at 80°C
- High Surge Current Capability — 10 A
- Minimum and Maximum Values of IGT, VGT and IH Specified for Ease of Design
- Immunity to dV/dt — 20 V/ /C0109sec Minimum at 110°C
- Glass-Passivated Surface for Reliability and Uniformity MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off−State Voltage(Note 1) (TJ = /C004240 to 110°C, Sine Wave, 50 to
60 Hz; Gate Open) CR05AS-3
VDRM, VRRM 300 400 600 800 V On-State RMS Current (TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) ITSM 10 A Circuit Fusing Consideration (t = 8.3 ms) I2t 0.415 A2s Forward Peak Gate Power (TA = 25°C, Pulse Width /C0118 1.0 /C0109s) PGM 0.1 W Forward Average Gate Power (TA = 25°C, t = 8.3 ms) PG(AV) 0.10 W Forward Peak Gate Current (TA = 25°C, Pulse Width /C0118 1.0 /C0109s) IGM 1.0 A Reverse Peak Gate Voltage (TA = 25°C, Pulse Width /C0118 1.0 /C0109s) VGRM 5.0 V Operating Junction Temperature Range @ Rate VRRM and VDRM TJ −40 to 110 Storage Temperature Range Tstg −40 to 150 PIN ASSIGNMENT Anode Cathode Gate K G A SCR
0.8 AMPERES RMS
4(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. CR05AS Series
Characteristic Symbol Max Unit Thermal Resistance − Junction−to−Case − Junction−to−Ambient R/C0113JC R/C0113JA 200 °C/W Lead Solder Temperature (/C01161/16″ from case, 10 secs max) TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current(Note 2) TC = 25°C (VD = Rated VDRM and VRRM; RGK = 1 k/C0087)T C = 110°C IDRM, IRRM — 100 /C0109A ON CHARACTERISTICS Peak Forward On−State Voltage * (ITM = 1.0 A Peak @ TA = 25°C) VTM — — 1.7 V Gate Trigger Current (Continuous dc)(Note 3) TC = 25°C (VAK = 7.0 Vdc, RL = 100 /C0087) IGT — 40 200 /C0109A Holding Current (2) TC = 25°C (VAK = 7.0 Vdc, Initiating Current = 20 mA) T C = −40°C IH — 0.5 5.0 mA Latch Current T C = 25°C (VAK = 7.0 V, Ig = 200 /C0109A) T C = −40°C IL — 0.6 mA Gate Trigger Voltage (Continuous dc)(Note 3) TC = 25°C (VAK = 7.0 Vdc, RL = 100 /C0087)T C = −40°C VGT — 0.62 0.8 1.2 V DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off−State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 /C0087,TJ = 110°C) dV/dt 20 35 — V//C0109s Critical Rate of Rise of On−State Current (IPK = 20 A; Pw = 10 /C0109sec; diG/dt = 1 A//C0109sec, Igt = 20 mA) di/dt — — 50 A//C0109s *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 2. R GK = 1000 /C0087 included in measurement. 3. Does not include R GK in measurement. + Current + Voltage VTM IDRM at VDRM IH Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak on State Voltage IH Holding Current Voltage Current Characteristic of SCR Anode + on state Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Forward Blocking Region IRRM at VRRM (off state)