STP3NB80 SUNTAC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. /g139/g3Higher Current Rating /g139/g3Lower Rds(on) /g139/g3Lower Capacitances /g139/g3Lower Total Gate Charge /g139/g3Tighter VSD Specifications /g139/g3Avalanche Energy Specified PIN CONFIGURATION SYMBOL TO- TO-220FP Top View 1 23 GATE DRAIN SOURCE D S G N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Symbol Value Unit Drain to Current /g1025 Continuous /g1025 Pulsed ID IDM 3.0 A Gate-to-Source Voltage /g1025 Continue /g1025 Non-repetitive VGS VGSM ±30 ±40 V V Single Pulse Drain-to-Source Avalanche Energy /g1025 T J = 25/g1082 (VDD = 50V, VGS = 10V, ID = 3A, L = 10mH, RG = 25/g525) EAS 176 mJ Thermal Resistance /g1025 Junction to Case /g1025 Junction to Ambient /g537JC /g537JA 1.70 /g1082/W Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds T L .300 /g1082 Total Power Dissipation Derate above 25 /g1082 PD 35 0.28 W W//g1082
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, T J = 25 к . STP3NB80 Characteristic Symbol Min Typ Max Units Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) V(BR)DSS 800 V Drain-Source Leakage Current (VDS =800 V , VGS = 0 V ) IDSS µA Gate-body Leakage Current (VGS = ±30 V, VDS = 0 V) IGSS ̈́100 nA Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) IGSSR -100 nA Gate Threshold Voltage (VDS = VGS, ID = 250 µA) VGS(th) 3.0 5.0 V Static Drain-Source On-Resistance (VGS = 10 V, ID = 1.5A) * RDS(on) 2.5 4.0 m h o s Forward Transconductance (VDS = ID(ON) X RDS(ON)max , ID = 1.5 A) * gFS 1.5 S Input Capacitance Ciss 445 580 pF (VDS = 25 V, VGS = 0 V,Output Capacitance Coss 60 80 pF Reverse Transfer Capacitance f = 1.0 MHz) Crss 7 9 pF Turn-On Delay Time td(on) 12 17 ns Rise Time tr 10 14 ns(VDD = 400 V, ID = 1.5 A, VGS = 10 V, Turn-Off Delay Time td(off) 19 40 ns Fall Time RG = 4.7ȍ) * tf 10 20 ns Total Gate Charge Qg 17 24 nC (VDS = 640 V, ID = 3.0 A, Gate-Source Charge Qgs 6.5 nC Gate-Drain Charge VGS = 10 V)* Qgd 7.5 nC Internal Drain Inductance (Measured from the drain lead 0.25” from package to center of die) LD 4.5 nH Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) LS 7.5 nH SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) VSD 1.6 V Forward Turn-On Time ton ** ns Reverse Recovery Time (ISD = 3.0 A, dIS/dt = 100A/µs) trr 650 ns
ORDERING INFORMATION
STP3NB80 TO-220 Full Package STP3NB80 POWER MOSFET Page 2 * Pulse Test: Pulse Width /g1033300µs, Duty Cycle /g10332% ** Negligible, Dominated by circuit inductance
Thermal Impedance forTO-220FP Transfer Characteristics Static Drain-source On Resistance Safe Operating Area for TO-220FP STP3NB80 POWER MOSFET Page 3
Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temperature Source-drain Diode Forward Characteristics Capacitance Variations Normalized On Resistance vs Temperature STP3NB80 POWER MOSFET Page 4