STC8550

STC8550 SUNTAC | Alldatasheet

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S PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Electrical Characteristics Ta=25°C unless otherwise noted hFEClassification Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage I C= -100µA, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage I C= -2mA, IB=0 -40 V BVEBO Emitter-Base Breakdown Voltage I E= -100µA, IC=0 -6 V ICBO Collector Cut-off Current V CB= -35V, IE=0 -100 nA IEBO Emitter Cut-off Current V EB= -6V, IC=0 -100 nA hFE1 hFE2 hFE3 DC Current Gain V CE= -1V, IC= -5mA VCE= -1V, IC= -100mA VCE= -1V, IC= -800mA 170 160 300 VCE (sat) Collector-Emitter Saturation Voltage I C= -800mA, IB= -80mA -0.28 -0.5 V VBE (sat) Base-Emitter Saturation Voltage I C= -800mA, IB= -80mA -0.98 -1.2 V VBE (on) Base-Emitter on Voltage V CE= -1V, IC= -10mA -0.66 -1.0 V Cob Output Capacitance V CB= -10V, IE=0 f=1MHz 15 pF fT Current Gain Bandwidth Product V CE= -10V, IC= -50mA 100 200 MHz Classification A B C hFE2 85 ~ 160 120 ~ 200 200 ~ 400 1. Emitter 2. Base 3. Collector 2W Output Amplifier of Portable Radios in Class B Push-pull Operation.

• Complimentary to STC8050  Collector Current: I C=1.5A  Collector Power Dissipation: P C=2W (TC=25°C) TO-921 STC8550 PNP Silicon Transistor