SDB2200E70

SDB0900E70 SUNTAC | Alldatasheet

Document overview

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Technical content

Features

• AC circuit oriented
• Glass-passivated junctions
• High surge current capability TO-92 Type 70 DO-214 Surface Mount TO-202 DO-15X STC SIDAC Series

di/dt — Critical rate-of-rise of on-state current dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM; TJ d 100 °C IBO — Breakover current 50/60 Hz sine wave IDRM — Repetitive peak off-state current 50/60 Hz sine wave; V = VDRM IH — Dynamic holding current 50/60 Hz sine wave; R = 100 : IT(RMS) — On-state RMS current TJ d 125 °C 50/60 Hz sine wave ITSM — Peak one-cycle surge current 50/60 Hz sine wave (non- repetitive) RS — Switching resistance 50/60 Hz sine wave VBO — Breakover voltage 50/60 Hz sine wave VDRM — Repetitive peak off-state voltage VTM — Peak on-state voltage; IT = 1 A General Notes

• All measurements are made at 60 Hz with a resistive load at an ambient temperature of +25 °C unless otherwise specified.
• Storage temperature range (T S) is -65 °C to +150 °C.
• The case (T C) or lead (TL) temperature is measured as shown on the dimensional outline drawings in the “Package Dimensions” sec- tion of this catalog.
• Junction temperature range (T J) is -40 °C to +125 °C.
• Lead solder temperature is a maximum of +230 °C for 10 s maxi- mum; t1/16" (1.59 mm) from case. Electrical Specification Notes (1) See 4 for V BO change versus junction temperature. (2) See 4 for I BO versus junction temperature. (3) See 3 for I H versus case temperature. (4) See 5 for test circuit. (5) See 3 for more than one full cycle rating. (6) T C d 90 °C for TO-92 Sidac TC d 105 °C for TO-202 Sidacs TL d 100 °C for DO-15X TL d 90 °C for DO-214 (7) See 5 for clarification of sidac operation. (8) For best sidac operation, the load impedance should be near or less than switching resistance. (9) See package outlines for lead form configurations. When ordering special lead forming, add type number as suffix to part number. (10) Do not use electrically connected mounting tab or center lead. V-I Characteristics Type Part No. IT(RMS) VDRM VBO IDRM IBO IH TO-92 DO-15X (10) TO-202 DO-214 (6) (7) (8) Amps Volts (1) Volts µAmps (2) µAmps (3) (4) mAmps See “Package Dimensions” section for variations. (9) MAX MIN MIN MAX MAX MAX TYP MAX 1 ±70 79 97 5 10 60 150 1 ±90 95 113 5 10 60 150 1 ±90 104 118 5 10 60 150 1 ±90 110 125 5 10 60 150 1 ±90 120 138 5 10 60 150 1 ±90 130 146 5 10 60 150 1 ±90 140 170 5 10 60 150 1 ±180 190 215 5 10 60 150 1 ±180 205 230 5 10 60 150 1 ±190 220 250 5 10 60 150 1 ±200 240 280 5 10 60 150 1 ±200 270 330 5 10 60 150 Pin 1 Pin 2 Do not use Pin 3 Do not use tab RS VBO VS– IS IBO– VDRM VS IS IH RS IDRM IBO VBO VT IT (IS - IBO) (VBO - VS)RS = SDB0900E70 SDB1050E70 SDB1100E70 SDB1200E70 SDB1300E70 SDB1400E70 SDB1500E70 SDB2000E70 SDB2200E70 SDB2400E70 SDB2500E70 SDB2000F1 SDB2200F1 SDB2400F1 SDB2500F1 SDB3000F1 SDB2500G SDB2400G SDB2200G SDB2000G SDB1500G SDB1400G SDB1300G SDB1200G SDB1100G SDB1050G SDB0900G SDB2500S SDB2400S SDB2200S SDB2000S SDB1500S SDB1400S SDB1300S SDB1200S SDB1100S SDB1050S SDB0900S

• See Electrical Specification Note (6). RTJA for TO-202 Type 23 and Type 41 is 70 °C/Watt. * Mounted on 1 cm 2 copper foil surface; two-ounce copper foil Figure E9.1 Peak Surge Current versus Surge Current Duration Figure E9.2 Normalized DC Holding Current versus Case/Lead Temperature VTM ITSM RS dv/dt di/dt Volts MAX (5) Amps (8) k: Volts/µSec Amps/µSecPackage 60 Hz 50 Hz EGFS M I N M I N T Y P 3 20 16.7 0.1 1500 150 Thermal Resistance (Steady State) RTJC [RTJA] °C/W (TYPICAL) * E Package G Package F Package S Package 1.0 10 100 1000 1.0 2.0 4.0 6.0 8.0 SUPPLY FREQUENCY: 60 Hz Sinusoidal LOAD: Resistive RMS ON-STATE CURRENT: I T RMS Maximum Rated Value at Specified Junction Temperature Notes: 1) Blocking capability may be lost during and immediately following surge current interval. 2) Overload may not be repeated until junction temperature has returned to steady-state rated value. Surge Current Duration – Full Cycles Peak Surge (Non-repetitive) On-state Current [ITSM] – Amps 100 1.0 2.0 1.5 -15-40 +25 +65 +105 +125 Case Temperature (TC) – ˚C IH IH(TC = 25 ˚C) Ratio of

Figure E9.3 Repetitive Peak On-state Current (I TRM) versus Pulse Width at Various Frequencies Figure E9.4 Maximum Allowable Ambient Temperature versus On-state Current Figure E9.5 Normalized V BO Change versus Junction Temperature Figure E9.6 Normalized Repetitive Peak Breakover Current versus Junction Temperature Figure E9.7 On-state Current versus On-state Voltage (Typical) Figure E9.8 Power Dissipation (Typical) versus On-state Current [Refer to 5 for Basic Sidac Circuit] di/dt Limit Line 0.6 0.8 100 200 400 600 2 x 10-3 1 x 10-2 24 6 8 1 x 10-1 24 6 8 1 Pulse base width (to) – ms Repetitive Peak On-state Current (ITRM) – Amps VBO Firing Current Waveform Non-Repeated Repetition Frequency f=5 Hz f = 10 Hz f = 100 Hz f = 1 kHz f = 5 kHz f = 10 kHz f = 20 kHz TJ = 125 ºC Max to ITRM l/f Non-Repeated 100 120 140 RMS On-state Current [IT(RMS)] – Amps Maximum Allowable Ambient Temperature (TA) – ˚C CURRENT WAVEFORM: Sinusoidal - 60 Hz LOAD: Resistive or Inductive FREE AIR RATING TO-92 and DO-214 DO-15X and TO-202 Type 23 and 41 TO-202 Type 1 -12 -20 0 +20 +40 +60 +80 +100 +120 -10 -40 +25 Junction Temperature (TJ) – ˚C Percentage of VBO Change – % +140 K2xxxF1 SDB1xxE SDB1xxG SDB1xxS SDB2xxE SDB2xxG SDB2xxS 20 30 40 50 60 80 70 90 100 110 120 Junction Temperature (TJ) – ˚C Repetitive Peak Breakover Current (IBO) Multiplier V = VBO 130 Positive or Negative Instantaneous On-state Voltage (vT) – Volts Positive or Negative Instantaneous On-state Current (iT) – Amps TL = 25 ˚C TO-92, DO-214 and DO-15X TO-202 "F" Package 0.4 0.8 1.2 1.6 0.2 0.6 1.0 1.4 1.8 2.0 2.2 RMS On-state Current [IT(RMS)] – Amps Average On-state Power Dissipation [PD(AV)] – Watts TO-92, DO-214 and DO-15X TO-202 "F" Package CURRENT WAVEFORM: Sinusoidal LOAD: Resistive or Inductive CONDUCTION ANGLE: See Basic Sidac Cirucit

Figure E9.9 Comparison of Sidac versus SCR for Gas Ignitor Circuit Figure E9.10 Circuit (Low Voltage Input) for Gas Ignition Figure E9.11 Typical High Pressure Sodium Lamp Firing Circuit Figure E9.12 Xenon Lamp Flashing Circuit Figure E9.13 Dynamic Holding Current Test Circuit for Sidacs Figure E9.14 Basic Sidac Circuit 100-250 V ac 60 Hz 100-250 V ac 60 Hz SCR Sidac 4.7 µF

100 V10 µF

24 V ac

4.7 µF 100 V ½ W K1200E Sidac 200 V H.V. Ignitor 1.2 µF 4.7 k- + - + Sidac

120 V ac

3.3 k 0.47 µF 400 V Ballast Sidac

220 V ac

7.5 k 0.22 µF Ballast Lamp

120 V ac 220 V ac

• + Xenon Lamp K2200G 10 µF 2 W

10 µF 450 V 4 kV 0.01 µF 400 V 20 M Sidac 200- 400 V 100 250 V Trigger Transformer 20:1 100-250 V ac 60 Hz Scope Push to test S1 Switch to test in each direction 100 Ω Device Under Test Scope Indication Trace Stops IH IPK Load 100-250 V ac 60 Hz IH VBO 120-145˚Conduction Angle IH IH Load Current VBO VBO

Figure E9.15 Relaxation Oscillator Using a Sidac Figure E9.16 Sidac Added to Protect Transistor for Typical Transistor Inductive Load Switching Requirements VDC(IN) ≥ VB0 VC IL RL R SIDAC (a) Circuit Rmax ≤ VIN -V BO IBO Rmin ≥ VIN -V TM IH (MIN) (b) WaveformsVBO VC IL t t C VCE Monitor 100 mH IC Monitor RS = 0.1 Ω Test Circuit VBB1 =10 V VBB2 =0 RBB2 = 100 Ω RBB1 = 150 Ω 2N6127 (or equivalent) 50 Ω 50 Ω Input (See Note B) TIP-47 VCC = 20 V Voltage and Current Waveforms Input Voltage 0 V 5 V 0.63 A Sidac VBO 10 V VCE(sat) tw ≈ 3 ms (See Note A) Collector Current Collector Voltage 100 ms tw Note A: Input pulse width is increased until ICM = 0.63 A. Note B: Sidac (or Diac or series of Diacs) chosen so that VBO is just below VCEO rating of transistor to be protected. The Sidac (or Diac) eliminates a reverse breakdown of the transistor in inductive switching circuits where otherwise the transistor could be destroyed.