MAC97

MAC97 SUNTAC | Alldatasheet

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Technical content

ays . TRIACS Sensitive Gate Triacs

0.8 AMPERE RMS

Silicon Bidirectional Thyristors 200 thru 600 VOLTS Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an Inexpensive TO-92 package which is readly adaptable for use in automatic insertion equipment. MT2 — m1 © One-piece,Injection-Molded Package G © Blocking Voltage to 600 Volts © Sensitive Gate Triggering in Four Trigger Modes (Quadrants) for all possible Combinations of Trigger Sources, and especially for Circuits that Source Gate Drives ¢ All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability © Device Marking: Device Type, e.g., MAC97A4, Date Code 1 2 3 MAXIMUM RATINGS —(T, = 25°C unless otherwise noted) TO-92(TO-226AA) CASE 029 Peak Repetitive Off-State Voltage VoRM, Volts Sine Wave 50 to 60 Hz, Gate Open 200 maces. “on [3 [Main termina 2 | MAC97A8 3 Main Terminal 2 ‘On-State RMS Current hems) Amp Full Cycle Sine Wave 50 to 60 Hz (Tc = +50"C) ORDERING INFORMATION ‘See detailed ordering and shipping information in the package Peak Non-Repetitive Surge Current hsm Amps dimensions secton on page Sof his data sheet. One Full Cycle, Sine Wave 60 Hz (To = 110°C) Preferred devices are recommended choices for future use Circuit Fusing Considerations (t = 8.3 ms) and best overall value. Peak Gate Voltage Vem 5.0 Volts (t= 2.0 s, Tce = +80°C) Peak Gate Power Pom 5.0 Watts. Average Gate Power Pocav) 0.4 Watt (Tc = 80°C, t= 8.3 ms) Peak Gate Current low Amp (t= 2.0ps, Te = +80°C) Operating Junction Temperature Range -40 to + 100 Storage Temperature Range 1. Vor and Ver for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Suzte ELECTRONIC CORP 1

Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient [ Ron | 200s | to | Maximum Lead Temperature for Soldering Purposes for 10 Seconds [ ma [| 2 |e | ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted; Electricals apply in both directions) ec OFF CHARACTERISTICS Peak Repetitive Blocking Current lorM: IRRM (Vp = Rated Vorm, Varo: Gate Open) Ty= 25°C pA Ty=+110°C pA ON CHARACTERISTICS Peak On-State Voltage Vim Volts (nm = £.85A Peak; Pulse Width = 2.0 ms, Duty Cycle = 2.0%) Gate Trigger Current (Continuous dc) lot 10 mA (Vp = 12 Vde, R= 100 Ohms) 10 MT2(+),G(+) MAC97-8 Device 10 MT2t 3385 10 MIZt- GC) MT2(-),G(+) 5.0 MT2(+), G(+) MACS7A4,A6,A8 Devices 5.0 MT2{+),G(-) 7.0 MT2(-),G(-) Machete) Gate Trigger Voltage (Continuous de) Ver Volts (Vp = 12 Vde, R= 100 Ohms) MT2(+), G(+) All Types 6 | 20 MT2(+),G(-) All Types . Has al Types he | oo MT2(-).G(+)All Types ‘ee (| 28 Gate Non-Trigger Voltage Veo 04 Volts (Vp = 12V, Ri = 100 Ohms, Ty = 110°C) All Four Quadrants Holding Current 15 mA (Vp = 12 Vdc, Initiating Current = 200 mA, Gate Open) Turn-On Time tot 2.0 ps (Vp = Rated Vp. itm = 1.0 pk, Ig = 25 mA) DYNAMIC CHARACTERISTICS Critical Rate-of- Rise of Commutation Voltage dViat(c) 5.0 Vips (Vp = Rated Vow It = 84 A, Commutating di/dt = .3 Ams, Gate Unenergized, Tc = 50°C) Critical Rate of Off-State voltage dvidt 25 Vius (Vp = Rated Vor, Tc = 110°C, Gate Open, Exponential Waveform Suz ELECTRONIC CORP 2

Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 4 | Symbol [Parameter Vy Maiterminal2* Peak Repetitive Forward Off State Voltage on state | lorm___| Peak Forward Blocking Current ln Peak Repetitive Reverse Off State Voltage Iarm at VaR la eee ene | Iram | Peak Reverse Blocking Current == Maximum On State Voltage Tannen || off state + Voltage [tn | Holding Current M4 'orm at Vor Quadrant 3 v. TM Main Terminal 2 - Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) (+) MT2 (+) MT2 Quadrant tt Oller (+) ler Quadrant | GATE GATE mm mm REF REF lor = +ler (-) MT2 (-) 2 Quadrant tit Oler (+) ler Quadrant V GATE GATE Mm wm REF REF MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants | and ill are used Sut ELECTRONIC CORP 3

Figure 1. RMS Current Derating Figure 2. RMS Current Derating

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Figure 3. Power Dissipation 2 Figure 4. On-State Characteristics

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5 Hn Hil 5 PS

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Figure 5. Transient Thermal Response Figure 6. Maximum Allowable Surge Current

2 L&E SS =| eA

6 ESS ES SS SSS SOF + SS

Figure 7. Typical Gate Trigger Current versus Figure 8. Typical Gate Trigger Voltage versus

2 FESS SSSSSS 2 FERRERS

Figure 9. Typical Latching Current versus Figure 10. Typical Holding Current versus

200 Veus \\

Figure 11. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage