MCR100-8

MCR100-8 SUNTAC | Alldatasheet

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Technical content

© Semiconductor Components Industries, LLC, 2000 December, 2000 – Rev. 0

1 Publication Order Number:

/C0078/C0067/C0082/C0049/C0054/C0057/C0068 /C0065/C0100/C0118/C0097/C0110/C0099/C0101/C0032/C0073/C0110/C0102/C0111/C0114/C0109/C0097/C0116/C0105/C0111/C0110 /C0071/C0101/C0110/C0101/C0114/C0097/C0108/C0032/C0080/C0117/C0114/C0112/C0111/C0115/C0101 /C0083/C0101/C0110/C0115/C0105/C0116/C0105/C0118/C0101/C0032/C0071/C0097/C0116/C0101 /C0083/C0105/C0108/C0105/C0099/C0111/C0110/C0032/C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100/C0032/C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114 Reverse Blocking Thyristor PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in a cost effective plastic TO-92 package.

• Sensitive Gate Allows Direct Triggering by Microcontrollers and Other Logic Circuits
• On–State Current Rating of 0.8 Amperes RMS at 80°C
• Surge Current Capability – 10 Amperes
• Immunity to dV/dt – 20 V/µsec Minimum at 110°C
• Glass-Passivated Surface for Reliability and Uniformity
• Blocking Voltage to 600 Volts MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage (Note 1.) (TJ = /C004240 to 110°C, Sine Wave, 50 to

60 Hz; Gate Open)

VDRM, VRRM

600 Volts

(TC = 80°C) 180° Conduction Angles IT(RMS) 0.8 A mp Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TJ = 25°C) ITSM 10 Amps Circuit Fusing Consideration (t = 10 ms) I2t 0.415 A2s Forward Peak Gate Power (TA = 25°C, Pulse Width /C0118 1.0 µs) PGM 0.1 Watt Forward Average Gate Power (TA = 25°C, t = 20 ms) PG(AV) 0.10 Watt Forward Peak Gate Current (TA = 25°C, Pulse Width /C0118 1.0 µs) IGM 1.0 Amp Reverse Peak Gate Voltage (TA = 25°C, Pulse Width /C0118 1.0 µs) VGRM 5.0 Volts Operating Junction Temperature Range @ Rate VRRM and VDRM TJ –40 to 110 Storage Temperature Range Tstg –40 to 150 SCR

0.8 AMPERES RMS

(1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant source such that the voltage ratings of the devices are exceeded. A STC OT391 TO−92 (TO−226) CASE 029 STYLE 10 PIN ASSIGNMENT Gate Anode Cathode K G A STC MCR100-8

Characteristic Symbol Max Unit Thermal Resistance – Junction to Case – Junction to Ambient RθJC RθJA 200 °C/W Lead Solder Temperature (/C01161/16″ from case, 10 secs max) TL 260 °C ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (Note 1.) T C = 25°C (VD = Rated VDRM and VRRM; RGK = 1.0 kΩ)T C = 110°C IDRM, IRRM 0.1 µA mA ON CHARACTERISTICS Peak Forward On–State Voltage (*) (ITM = 1.0 Amp Peak @ TA = 25°C) VTM – – 1.7 Volts Gate Trigger Current (Continuous dc) (Note 2.) T C = 25°C (VAK = 12 V, RL = 100 Ohms) IGT – 6 8 µA Holding Current (Note 2.) T C = 25°C (VAK = 12 V, IGT = 0.5 mA) T C = –40°C IH – 0.5 5.0 mA Latch Current T C = 25°C (VAK = 12 V, IGT = 0.5 mA, RGK = 1.0 k) T C = –40°C IL – 0.6 mA Gate Trigger Voltage (Continuous dc) (Note 2.) T C = 25°C (VAK = 12 V, RL = 100 Ohms, IGT = 10 mA) T C = –40°C VGT – 0.62 0.8 1.2 Volts DYNAMIC CHARACTERISTICS Critical Rate of Rise of Off–State Voltage (VD = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms, TJ = 110°C) dV/dt 20 35 – V/µs Critical Rate of Rise of On–State Current (IPK = 20 A; Pw = 10 µsec; diG/dt = 1.0 A/µsec, Igt = 20 mA) di/dt – – 50 A/µs *Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%. 1. R GK = 1000 Ohms included in measurement. 2. Does not include R GK in measurement.