BT134 SUNTAC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated triacs in a plastic envelope, SYMBOL PARAMETER MAX. UNIT intended for use in applications requiring high bidirectional transient and blocking BT134- 600 voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic V DRM Repetitive peak off-state 60 0 V lighting, heating and static switching. voltages IT(RMS) RMS on-state current 4 A ITSM Non-repetitive peak on-state 25 A current PINNING - TO126 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate LIMITING VALUES L SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM Repetitive peak off-state - 600 1 V voltages IT(RMS) RMS on-state current full sine wave; T mb ≤ 107 ˚C - 4 A ITSM Non-repetitive peak full sine wave; T j = 25 ˚C prior to on-state current surge t = 20 ms - 25 A t = 16.7 ms - 27 A I2tI 2t for fusing t = 10 ms - 3.1 A 2s dIT/dt Repetitive rate of rise of I TM = 6 A; IG = 0.2 A; on-state current after dI G/dt = 0.2 A/µs triggering T2+ G+ - 50 A/ µs T2+ G- - 50 A/ µs T2- G- - 50 A/ µs T2- G+ - 10 A/ µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature T1T2 G12 3 tab 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. June 2001 1 Rev 1.400 BT134 series Triacs logic level

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W Rth j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 5 35 25 mA T2+ G- - 8 35 25 mA T2- G- - 11 35 25 mA T2- G+ - 30 70 70 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 7 20 20 mA T2+ G- - 16 30 30 mA T2- G- - 5 20 20 mA T2- G+ - 7 30 30 mA I H Holding current V D = 12 V; IGT = 0.1 A - 5 15 15 mA VT On-state voltage I T = 5 A - 1.4 1.70 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; 0.25 0.4 - V Tj = 125 ˚C ID Off-state leakage current V D = VDRM(max); - 0.1 0.5 mA Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of V DM = 67% VDRM(max); 100 50 250 - V/ µs off-state voltage T j = 125 ˚C; exponential waveform; gate open circuit dV com/dt Critical rate of change of V DM = 400 V; Tj = 95 ˚C; - - 50 - V/ µs commutating voltage I T(RMS) = 4 A; dIcom/dt = 1.8 A/ms; gate open circuit tgt Gate controlled turn-on I TM = 6 A; VD = VDRM(max);- - 2 - µs time I G = 0.1 A; dIG/dt = 5 A/µs June 2001 2 Rev 1.400 BT134 series Triacs logic level

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 012345 = 180 120 IT(RMS) / A Ptot / W Tmb(max) / C 125 122 119 116 113 110 107 104 101 -50 0 50 100 1500 Tmb / C IT(RMS) / A 107 C 10us 100us 1ms 10ms 100ms10 100 1000 T / s ITSM / A T ITSM time I Tj initial = 25 C max T dI /dt limitT T2- G+ quadrant 0.01 0.1 1 100 surge duration / s IT(RMS) / A 1 10 100 10000 BT136 Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 Tj / C VGT(Tj) VGT(25 C) June 2001 3 Rev 1.400 BT134 series Triacs logic level

Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dIT/dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dIT/dt. -50 0 50 100 1500 0.5 1.5 2.5 Tj / C T2+ G+ T2+ G- T2- G- T2- G+ IGT(Tj) IGT(25 C) 0 0.5 1 1.5 2 2.5 30 VT / V IT / A Tj = 125 C Tj = 25 C typ max Vo = 1.27 V Rs = 0.091 ohms -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01 0.1 tp / s Zth j-mb (K/W) unidirectional bidirectional t pP t D -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IH(Tj) IH(25C) 0 50 100 150 100 1000 1.83 Tj / C dIcom/dt = 5.1 3.9 2.3 dVcom/dt (V/us) A/ms 1.4 off-state dV/dt limit BT136 SERIES BT136...F SERIES June 2001 4 Rev 1.400 BT134 series Triacs logic level