CEM6188 BYCHIP | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 5
Technical content
Features
VDS= 60V, ID= 9 A RDS(ON) < 14 mΩ @ VGS = 10V RDS(ON) < 18 mΩ @ VGS = 4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features SOP-8 (Dual) Schematic diagram www.bychip.cnPin Assignment CEM6188 v1.0
Specifications TJ = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Value Unit Min. Typ. Max. Static Parameters Drain-Source Breakdown Voltage V (BR)DSS VGS = 0V, ID = 250µ A 60 -- -- V Zero Gate Voltage Drain Current I DSS VDS = 60V, VGS = 0V, TJ = 25º C -- -- 1 μA Gate-Source Leakage IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage V GS(th) VDS = VGS, ID = 250µ A 1.0 2.5 V Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 9A -- 14 mΩ VGS = 4.5V, ID = 9A -- 18 Forward Transconductance gFS VDS=5V,ID=9A 25 -- -- S Dynamic Parameters Input Capacitance Ciss VGS = 0V, VDS = 30V, f = 1.0MHz -- 2180 -- pFOutput Capacitance Coss -- 350 -- Reverse Transfer Capacitance Crss -- 270 -- Total Gate Charge Qg VDD = 30V, ID = 9A, VGS = 10V -- 47 -- nCGate-Source Charge Qgs -- 6.7 -- Gate-Drain Charge Qgd -- 12.5 -- Turn-on Delay Time td(on) VDD = 30V, ID = 9A, RG = 3Ω -- 8.5 -- ns Turn-on Rise Time tr -- 6 -- Turn-off Delay Time td(off) -- 30 -- Turn-off Fall Time tf -- 5 -- Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25º C -- -- 9 A Pulsed Diode Forward Current ISM -- -- 36 Body Diode Voltage VSD TJ = 25º C, ISD = 9A, VGS = 0V -- -- 1.2 V Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. Identical low side and high side switch with identical RG www.bychip.cn CEM6188 v2.0
www.bychip.cn CEM6188 v3.0