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Technical content
Page:P2-P1 Chip Diodes Switching Diode
FEATURES
- Silicon epitaxial planar diode
- SMD chip pattern, available in various dimension included 0805 & 0603
- Leadfree and RoHS compliance components
- For small signal switching and operating ambient temperature less than 55oC and voltage withstand less than 60V; not suitable for AC switching input as rectified circuit and high reverse voltage location MECHANICAL CHARACTERISTICS
- Size: 1206
- Weight: approx.10mg
- Marking: Cathode terminal THERMAL CHARACTERISTICS 1) Parameter at Tamb =25oC 1) Symbol Value Unit Forward Power Dissipation Power derating above 25oC Ptot 400 mW 3.2 mW/ oC Junction Temperature Tj 150 oC Thermal Resistance Junction to Ambient air R θJA 375 oC/W Operating& Storage Temperature range Tstg -55 to 150 oC MAXIMUM RATING 1) Parameter at Tamb =25oC 1) Symbol Value Unit Repetitive Peak Reverse Voltage V RRM 75 V Average rectified current sin half wave rectification w ith resistive load IF(AV) 150 mA Repetitive Peak Forward Current at Tamb =25°C IFRM 300 mA Non-Repetitive Surge Forward Current at t<1s and Tj=25oC at t 8.3ms and Tj=25oC IFSM 500 mA 1000 mA ELECTRICAL CHARACTERISTICS 1) Parameter at Tamb =25oC 1) Symbol Value Unit Forward Voltage at IF=10mA at IF=100mA V F 1.0MAX V 1.25MAX V Leakage Current at VR =20V Leakage Current at VR =75V IR 0.025MAX uA
5 MAX uA
Capacitance atV R =0V, f=1M H z C tot 4 MAX pF Reverse Recovery Time at IF =IR =10mA,R L=100Ω trr 4 MAX ns 1) Valid provided that electrodes are kept at ambient temperature. 1206 L 3.2±0.2 mm W 1.5±0.2 mm T 0.85±0.1 mm C 0.55±0.2 mm CD4148WP MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Figure 3. Forward Current De-r