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Technical content
Page:P2-P1 Plastic-Encapsulate Transistors
FEATURES
MARKING :CR MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO 60 V Collector-Emitter Voltage V CEO 50 V Emitter-Base Voltage V EBO 5 V Collector Current -Continuous IC 150 mA Collector Power Dissipation PC 0.4 W Junction T emperature TJ 150 Storage T emperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC =1mA , IE=0 60 V Collector-emitter breakdown voltage V CEO IC =100uA , IB =0 50 V Emitter-base breakdown voltage V EBO IE=100mA, IC =0 5 V Collector cut-off current ICB O V CB =60V, IE=0 0.1 uA Collector cut-off current ICE O V CE =45V 0.1 uA Emitter cut-off current IEB O V EB =5V , I C =0 0.1 uA DC current gain hFE(1) V CE =6 V , I C =1mA 70 700 hFE(2) V CE =6 V , I C =0.1mA 40 Collector-emitter saturation voltage V CE(sat) IC =100mA, IB =10mA 0.3 V Base-emitter saturation voltage V BE(sat) IC =100mA, IB =10mA 1 V Transition frequency fT V CE =6V,IC =10mA,f =30 MHz 200 MHz Collector output capacitance Cob V CB =10V,IE=0,f=1MH Z 3.0 pF Noise figure NF VCE=6V ,IC=0.1mA RG=10k Ω,f=1kMHZ 10 dB CLASSIFICATION OF h FE Rank O Y GR BL Range 70-140 120-240 200-400 350-700 (NPN) 1. BASE 2. EMITTER SOT-23 3. COLLECTO C945 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics C945 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/