C122F1 KERSEMI | Alldatasheet

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/C0067/C0049/C0050/C0050/C0070/C0049/C0044 /C0067/C0049/C0050/C0050/C0066/C0049 /C0083/C0105/C0108/C0105/C0099/C0111/C0110 /C0067/C0111/C0110/C0116/C0114/C0111/C0108/C0108/C0101/C0100 /C0082/C0101/C0099/C0116/C0105/C0102/C0105/C0101/C0114/C0115 Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half–wave silicon gate–controlled, solid–state devices are needed. Glass Passivated Junctions and Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking V oltage to 200 V olts Device Marking: Logo, Device Type, e.g., C122F1, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Peak Repetitive Off–State Voltage(1) (TJ = 25 to 100°C, Sine Wave, 50 to 60 Hz; Gate Open) C122F1 C122B1 VDRM, VRRM 200 Volts On-State RMS Current (180° Conduction Angles; TC = 75°C) IT(RMS) 8.0 Amps Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C) ITSM Amps Circuit Fusing Considerations (t = 8.3 ms) I2t A2s Forward Peak Gate Power (Pulse Width = 10 µs, TC = 70°C) PGM 5.0 Watts Forward Average Gate Power (t = 8.3 ms, TC = 70°C) PG(AV) 0.5 Watt Forward Peak Gate Current (Pulse Width = 10 µs, TC = 70°C) IGM 2.0 Amps Operating Junction Temperature Range TJ –40 to +125 Storage Temperature Range Tstg –40 to +150 (1) VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. SCRs

8 AMPERES RMS

ORDERING INFORMATION

www.kersemi.com 500/Box K G A TO–220AB CASE 221A STYLE 3 2 3 PIN ASSIGNMENT Anode Gate Cathode

4 Anode

C122F1, C122B1 www.kersemi.com THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 1.8 °C/W Thermal Resistance, Junction to Ambient R θJA 62.5 °C/W Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM , Gate Open) T C = 25°C TC = 125°C IDRM , IRRM 0.5 µA mA ON CHARACTERISTICS Peak On–State Voltage(1) (ITM = 16 A Peak, TC = 25°C) VTM 1.83 Volts Gate Trigger Current (Continuous dc) (VAK = 12 V, RL = 100 Ohms) T C = 25°C TC = –40°C IGT mA Gate Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 Ohms) T C = 25°C TC = –40°C VGT 1.5 2.0 Volts Gate Non–Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 Ohms, TC = 125°C) VGD 0.2 Volts Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C TC = –40°C IH mA Turn-Off Time (VD = Rated VDRM ) (ITM = 8 A, IR = 8 A) tq µs DYNAMIC CHARACTERISTICS Critical Rate–of–Rise of Off–State Voltage (VAK = Rated VDRM , Exponential Waveform, Gate Open, TC = 100°C) dv/dt V/µs (1) Pulse Test: Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%.

50 TO 400 Hz

Figure 1. Current Derating (Half–Wave) Figure 2. Current Derating (Full–Wave) Figure 3. Maximum Power Dissipation Figure 4. Maximum Power Dissipation

C122F1, C122B1 PACKAGE DIMENSIONS TO–220AB CASE 221A–07 ISSUE Z NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73 G 0.095 0.105 2.42 2.66 H 0.110 0.155 2.80 3.93 J 0.014 0.022 0.36 0.55 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33 Q 0.100 0.120 2.54 3.04 R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 A K L V G D N Z H Q FB 123 –T– SEATING PLANE S R J U T C STYLE 3: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE www.kersemi.com