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Features
UnitSYMBOL PARAMETER Value VDRM V ITR M S 4 A ITSM 20 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current Simplified outlineSymbol ¼http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs C106D C106MC106D C106MTM HPM
Description
Standard gate triggering SCR is fully isolated package suitable for the application where requiring high bidirectional blocking voltage capability and also suitable for over voltage protection ,motor control circuit in power tool, inrush current limit circuit and heating control system. a g k cathode anode gate anode TO-126 C106D C106M 400 600 SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Thermal resistance Junction to ambient - /W- 75 R JC R JA Thermal resistance Junction to case /W3- -
Limiting values in accordance with the Maximum system(IEC 134) 2/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs SYMBOL PARAMETER CONDITIONS MIN Value UNIT SYMBOL PARAMETER CONDITIONS MIN V V DRM RRM IT(RMS) ITSM It IT(AV) IGM VGRM PGM Tstg Tj PG(AV) Repetitive peak off-state RGK=1K TC=-40 to 110 o Voltages RMS on-state current Non-repetitive peak On-state current Circuit Fusing Average Forward Current Forward Peak gate current (Pulse Width 1.0 sec, T = 80 )C (I = 10 A)GRPeak gate voltage Forward Peak Gate Power Forward Average Gate Power Storage temperature Operating junction Temperature V A A A AS V A W W all conduction angles T=8.3ms (180 Conduction Angles, T = 80 )C o 1/2Cycle,60Hz,Tj=-40 to+110 1.65 2.55 -40 -40 400 600 C106D C106M 110 T =25 C unless otherwise statedJ O Static characteristics IGT IH IL VTM VGT VGD Dynamic Characteristics D/ d tV Gate trigger current ( I T M=4A ) Holding current Latching Current Peak Forward On-State Voltage Gate trigger voltage Gate Non-Trigger Voltage Critical Rate-of-Rise of Off-State Voltage V =6Vdc,R =100 Ohms, V =6Vdc,R =100 Ohms,Tj=-40 AK L AK L Tj=25 V =12Vdc; R =1000 OhmsDG K V = 1 2 V ;I = 2 0m AAK G ( V =6V d c ,R L=1 0 0 O h m s )AK T= 2 5 Tj=-40 J V =12V,R =100 Ohms;T =110AK L J UNITMAXTYP 0.4 0.6 - - 2.2 0.8 0.5 0.2 0.75 V V Tj=25 Tj=-40 Tj=+110 C o Tj=25 Tj=-40 Tj=110 ,R =1000 Ohms, V =Rated V GK AK DRM 200 500 0.3 0.4 0.14 0.2 0.35 mA mA 1.0 V V 0.2 0.5 0.1 150 V/ s (Pulse Width 1.0 sec, T = 80 )C (Pulse Width 1.0 sec, T = 80 )C C106D C106MC106D C106M
¾http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs C106D C106MC106D C106M
Net Mass: 0.8 g TO-126 4/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs C106D C106MC106D C106M