BTB04-600SL KERSEMI | Alldatasheet

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Technical content

n Very low I GT = 10mA max n Low I H = 15mA max n BTA Family: Insulating voltage = 2500V (RMS) (UL recognized: E81734)

FEATURES

The BTA/BTB04 T/D/S/A triac family are high per- formance glass passivated PNPN devices. These parts are suitables for general purpose ap- plications where gate high sensitivity is required. Application on 4Q such as phase control and static switching.

DESCRIPTION

Symbol Parameter Value Unit I T(RMS) RMS on-state current (360° conduction angle) BTA Tc = 90°C 4 A BTB Tc = 95°C I TSM Non repetitive surge peak on-state current (Tj initial = 25°C) tp = 8.3ms 42 A tp = 10ms 40 I tI t value tp = 10ms 8 A s dI/dt Critical rate of rise of on-state current Gate supply: I G = 50mA dI G /dt = 0.1A/µs Repetitive F = 50Hz

10 A/µs

Storage and operating junction temperature range -40 to +150 -40 to +110 Tl Maximum lead soldering temperature during 10s at 4.5mm from case 260 °C ABSOLUTE RATINGS (limiting values) Symbol Parameter BTA / BTB04- Unit

400 T/D/S/A 600 T/D/S/A 700 T/D/S/A

V DRM V RRM Repetitive peak off-state voltage Tj = 110°C 400 600 700 V G BTB04 T/D/S/A 2014-6-9 www.kersemi.com

BTA04 T/D/S/A BTB04 T/D/S/A Symbol Parameter Value Unit Rth (j-a) Junction to ambient 60 °C/W Rth (j-c) DC Junction to case for DC BTA 4.4 °C/W BTB 3.2 Rth (j-c) AC Junction to case for 360° conduction angle (F = 50Hz) BTA 3.3 °C/W BTB 2.4 GATE CHARACTERISTICS (maximum values) P G(AV) =1 W P GM = 40W (tp = 20µs) I GM = 4A (tp = 20µs) V GM = 16V (tp = 20µs) THERMAL RESISTANCE Symbol Test conditions Quadrant BTA / BTB04 Unit TDSA I GT V D = 12V (DC) R L =3 3Ω Tj = 25°C I - II - III MAX. 5 5 10 10 mA IV MAX. 5 10 10 25 V GT V D = 12V (DC) R L =3 3Ω Tj = 25°C I - II - III - IV MAX. 1.5 V V GD V D DRM R L = 3.3kΩ Tj =110°C I - II - III - IV MIN. 0.2 V tgt V D DRM I G = 40mA dI G /dt = 0.5A/µs Tj = 25°C I - II - III - IV TYP. 2 µs I L I G = 1.2I GT Tj = 25°C I - III - IV TYP. 10 10 20 20 mA II 20 20 40 40 I H T = 100mA Gate open Tj = 25°C MAX. 15 15 25 25 mA V TM TM = 5.5A tp = 380µs Tj = 25°C MAX. 1.65 V I DRM I RRM V DRM rated V RRM rated Tj = 25°C MAX. 0.01 mA Tj = 110°C MAX. 0.75 dV/dt * Linear slope up to V D = 67% V DRM gate open Tj = 110°C TYP. 10 10 - - V/ µs MIN. - - 10 10 (dI/dt)c* (dI/dt)c = 1.8A/ms Tj = 110°C TYP. 1 1 5 5 V/µs * For either polarity of electrode A voltage with reference to electrode A

ELECTRICAL CHARACTERISTICS

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I T(RMS) V DRM RRM Sensitivity Specification A V TDSA BTA (Insulated) 4 400 X X

600 X X

700 X X

(Uninsulated)

400 X X

Insulation: A: insulated B: non insulated Current: 04A Voltage: 400: 400V 600: 600V 700: 700V Sensitivity

ORDERING INFORMATION

BTA04 T/D/S/A BTB04 T/D/S/A 2014-6-9 www.kersemi.com

Fig. 3:Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTB). Fig. 4:RMS on-state current versus case temper- ature. 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 0.01 0.1 Zth/Rth Zth(j-c) Zth(j-a) tp(s) Fig. 5:Relative variation of thermal impedance versus pulse duration. Fig. 6:Relative variation of gate trigger current and holding current versus junction temperature. Fig. 1:Maximum RMS power dissipation versus RMS on-state current (F = 50Hz).(Curves are cut off by (dI/dt)c limitation) Fig. 2:Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact (BTA). BTA04 T/D/S/A BTB04 T/D/S/A 2014-6-9 www.kersemi.com

Fig. 9:On-state characteristics (maximum values). Fig. 7:Non repetitive surge peak on-state current versus number of cycles. Fig. 8:Non repetitive surge peak on-state current for a sinusoidal pulse with width: t≤ 10ms, and cor- responding value of I BTA04 T/D/S/A BTB04 T/D/S/A 2014-6-9 www.kersemi.com