BT258S HAOPIN | Alldatasheet
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Features
UnitSYMBOL PARAMETER Value VDRM 600 800 V ITR M S 8 A ITSM 75 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Simplified outlineSymbol ¼http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs BT258STM HPM
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. a g k Cathode anode gate anode 600R 800R TO-252 123 SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to am bient Pcb(FR4)mounted; footprint as in Fig.14
75 K/W- -
Rth j-mb Thermal resistance Junction to mounting base K/W2.0- -
Limiting values in accordance with the Maximum system(IEC 134) 2/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT258S SYMBOL PARAMETER CONDITIONS MIN MAX UNIT SYMBOL PARAMETER CONDITIONS MIN VVDRM RRM IT(RMS) IT(AV) ITSM It DI /dtT IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Average on-state current Non-repetitive peak on-state current I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature V V A W W all conduction angles Half sine wave;<=111 C o half sine wave; Tj = 25 C prior to surge o T=10ms I =10A; I =50mA;TM G D /dt=50mA/ sIG A/ s t=10ms t=8.3ms Over any 20 ms period -40 600 800 600R 800R 125 O C O C T =25 C unless otherwise statedJ O Static characteristics IGT IL IH VT VGT IIDR Dynamic Characteristics D/ d tVD tgt tg Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time V =12V; I =0.1ADT V =12V; I =0.1ADG T V =12V; I =0.1ADG T I =16AT V =12V;I =0.1ADT V =V ;I =0.1A;T =110 CD DRM(max) T J O V= V ; V= V T= 1 2 5CD DRM(max) R RRM(max) J O UNITMAXTYP 0.1 100 100 0.3 1.3 1.5 0.4 0.2 0.1 0.5 mA mA V V =67% V ;Tj=125 C;DM DRM(max) o Exponential wave form;R =100GK I =10A;V =V ;TM D DRM(max) I= 5 m A ;G Dl /dt=0.2A/ sG dv /dt=2V/ s;R =1kDG K 20050 - 100.4 mA A A A A AS 1.5 V V 0.5 150 s s V/ s V =67% V ;Tj=125 C;I =12A V =24V;dI /dt=10A/ S DM DRM(max) TM RT M o
¾http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT258S
¾http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT258S
4/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MECHANICAL DATA BT258S Dimensions in mm Net Mass: 0.45g TO-252(DPAK)