BT258 HAOPIN | Alldatasheet
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UnitSYMBOL PARAMETER Value VDRM RRMV 500R 600R 800R 500 600 800 V ITR M S 8 A ITSM 75 A Repetitive peak off-state voltages Voltages RMS on-state current Non-repetitive peak on-state current 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs BT258TM HPM
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Pin Description Cathode Anode Gate Simplified outlineSymbol a g k 123 TO-220 SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to ambient In free air 60 K/W- - Rth j-mb Thermal resistance Junction to mounting base K/W2.0- -
Limiting values in accordance with the Maximum system(IEC 134) 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs SYMBOL PARAMETER CONDITIONS MIN MAX UNIT TSMI I I TAV T(RMS) It DI /dtT IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Average on-state current Non-repetitive peak On-state current I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature V V A W W Half sine wave;Tmb<=111 All conduction angles half sine wave; Tj = 25 C prior to surge o T=10ms I =10A; I =50mA;TM G D /dt=50mA/ sIG T=10ms T=8.3ms Over any 20 ms period -40 - 125 A A A A AS A/ s 0.5 150 VDRM RRMV 500R 600R 800R 500 600 800 BT258 SYMBOL PARAMETER CONDITIONS MIN T =25 C unless otherwise statedJ O Static characteristics IGT IL IH VT VGT IIDR Dynamic Characteristics D/ d tVD tgt tg Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time V =12V; I =0.1ADT V =12V; I =0.1ADG T V =12V; I =0.1ADG T I =16AT V =12V;I =0.1ADT V =V ;I =0.1A;T =110 CD DRM(max) T J O V= V ; V= V T= 1 2 5CD DRM(max) R RRM(max) J O UNITMAXTYP 0.1 100 100 0.3 1.3 1.5 0.4 0.2 0.1 0.5 mA mA V V =67% V ;Tj=125 C;DM DRM(max) o Exponential wave form;R =100GK I =10A;V =V ;TM D DRM(max) I= 5 m A ;G Dl /dt=0.2A/ sG dv /dt=2V/ s;R =1kDG K 20050 - 100.4 mA 1.5 V V s s V/ s V =67% V ;Tj=125 C;I =12A V =24V;dI /dt=10A/ S DM DRM(max) TM RT M o
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT258
4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT258
http://www.haopin.com MECHANICAL DATA Dimensions in mm Net Mass: 2 g 5/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT258