BT169 HAOPIN | Alldatasheet
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UnitSYMBOL PARAMETER Value VDRM 400 600 V ITR M S 0.8 A ITSM 8 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current (full cycle,Tj initial=25 ) Simplified outlineSymbol ¼http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs BT169TM HPM
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. a g k Cathode anode gate anode TO-92 123 BT169D BT169G SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to am bient pcb mounted; lead length=4mm
150 K/W- -
Rth j-lead Thermal resistance Junction to mounting base K/W60- -
Limiting values in accordance with the Maximum system(IEC 134) 2/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT169 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT SYMBOL PARAMETER CONDITIONS MIN VDRM I I T(RMS) TSM It dI /dtT IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Non-repetitive peak On-state current I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature V V A W W Half sine wave;Tmb<=83 C all conduction angles o half sine wave; T j=2 5 C prior to surge o T=10ms I =2A; I =10mA;TM G D /dt=100mA/ sIG T=10ms T=8.3ms Over any 20 ms period -40 - 125 O C O C T =25 C unless otherwise statedJ O Static characteristics IGT IL IH VT VGT ID Dynamic Characteristics dV /dtD tgt tq Gate trigger current Latching current On-state voltage Gate trigger voltage Off-state leakage current Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time V =12V; I =10mA;gate open circuitDT V =12V; I =0.5mA;R =1kDG T G K V =12V; I =0.5mA;R =1kDG T G K I= 1 AT V =12V;I =10mA;gate open circuitDT V =V ;I =10mA;T =125 C; gate open circuit D DRM(max) T J O V =V ;V =V T =125 C;R =1kD DRM(max) R RRM(max) J GK O UNITMAXTYP 0.2 100 1.2 1.35 0.5 0.3 0.05 0.1 mA mA V V =67% V ;Tj=125 C;DM DRM(max) o exponential wave form; Gate open circuit R =1kGK I= 2 A ; V = V ;TM D DRM(max) I =10mA;G Dl /dt=0.1A/ sG Dl /dt=2V/ s;R =1kGG K 20050 - 62 mA A A A AS 0.8 0.8 V V 0.1 150 s s V/ s V =67% V ;Tj=125 C;I =1.6A V =35V;dI /dt=30A/ S DM DRM(max) TM RT M o 0.32
50 A/ S
A 400 600BT169G BT169D
http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT169
4/4http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs MECHANICAL DATA Dimensions in mm Net Mass:0.2 g TO-92 BT169