BT150 HAOPIN | Alldatasheet
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Features
UnitSYMBOL PARAMETER Value VDRM RRMV 500R 600R 800R 500 600 800 V ITR M S 4 A ITSM 35 A Repetitive peak off-state voltages Voltages RMS on-state current Non-repetitive peak on-state current 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. SCRs BT150TM HPM
Description
Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. Pin Description Cathode Anode Gate Simplified outlineSymbol a g k 123 TO-220 SYMBOL PARAMETER MAX UNITCONDITIONS TYPMIN Rth j-a Thermal resistance Junction to ambient In free air 60 K/W- - Rth j-mb Thermal resistance Junction to mounting base K/W2.5- -
Limiting values in accordance with the Maximum system(IEC 134) 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT150 SYMBOL PARAMETER CONDITIONS MIN MAX UNIT SYMBOL PARAMETER CONDITIONS MIN TSMI I I TAV T(RMS) It DI /dtT IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Average on-state current Non-repetitive peak On-state current I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature V V A W W Half sine wave;Tmb<=113 All conduction angles half sine wave; Tj = 25 C prior to surge o T=10ms I =10A; I =50mA;TM G D /dt=50mA/ sIG T=10ms T=8.3ms Over any 20 ms period -40 - 125 T =25 C unless otherwise statedJ O Static characteristics IGT IL IH VT VGT ID Dynamic Characteristics D/ d tVD tgt tg Gate trigger current Latching current On-state voltage Holding current Gate trigger voltage Off-state leakage current Critical rate of rise of Off-state voltage Gate controlled turn-on Crcuit commutated tum- off time time V =12V; I =0.1ADT V =12V; I =0.1ADG T V =12V; I =0.1ADG T I= 5 AT V =12V;I =0.1ADT V =V ;I =0.1A;T =110D DRM(max) T J V= V ; V= V T= 1 2 5D DRM(max) R RRM(max) J UNITMAXTYP 0.1 100 0.10 1.23 1.8 0.4 0.2 0.1 0.5 mA mA V V =67% V ;Tj=125 ;DM DRM(max) Exponential wave form;R =100GK I =10A;V =V ;TM D DRM(max) I= 5 m A ;G dl /dt=0.2A/usG Dl /dt=2V/ s;RGK=1kG 20015 - 100.17 mA A A A A AS A/ s 2.5 6.1 1.5 V V 0.5 150 s s V/ s V =67% V ;Tj=125 ;I =8A V =10V;dI /dt=10A/ S DM DRM(max) TM RT M VDRM RRMV 500R 600R 800R 500 600 800
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT150
4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT150
http://www.haopin.com MECHANICAL DATA Dimensions in mm Net Mass: 2 g 5/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. TM HPM SCRs BT150