BT134-600E KERSEMI | Alldatasheet

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Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT134- 500 600 800 bidirectional transient and blocking BT134- 500F 600F 800F voltage capability and high thermal BT134- 500G 600G 800G cycling performance. Typical DRM Repetitive peak off-state 500 600 800 V applications include motor control, industrial and domestic lighting, T(RMS) RMS on-state current 4 4 4 A heating and static switching. TSM Non-repetitive peak on-state 25 25 25 A current SOT82 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 V DRM Repetitive peak off-state - 500 600 800 V voltages I T(RMS) RMS on-state current full sine wave; T mb ≤ 107 ˚C - 4 A I TSM Non-repetitive peak full sine wave; T j = 25 ˚C prior to on-state current surge t = 20 ms - 25 A t = 16.7 ms - 27 A I tI t for fusing t = 10 ms - 3.1 A s dI T /dt Repetitive rate of rise of I TM = 6 A; I G = 0.2 A; on-state current after dI G /dt = 0.2 A/µs triggering T2+ G+ - 50 A/ µs T2+ G- - 50 A/ µs T2- G- - 50 A/ µs T2- G+ - 10 A/ µs I GM Peak gate current - 2 A V GM Peak gate voltage - 5 V P GM Peak gate power - 5 W P G(AV) Average gate power over any 20 ms period - 0.5 W T stg Storage temperature -40 150 ˚C T j Operating junction - 125 ˚C temperature T1T2 G 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. QUICK REFERENCE DATA SYMBOL voltagesV I I TO-126 BT134 series 2014-6-13 www.kersemi.com

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W R th j-a Thermal resistance in free air - 100 - K/W junction to ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; I T = 0.1 A T2+ G+ - 5 35 25 50 mA T2+ G- - 8 35 25 50 mA T2- G- - 11 35 25 50 mA T2- G+ - 30 70 70 100 mA I L Latching current V D = 12 V; I GT = 0.1 A T2+ G+ - 7 20 20 30 mA T2+ G- - 16 30 30 45 mA T2- G- - 5 20 20 30 mA T2- G+ - 7 30 30 45 mA I H Holding current V D = 12 V; I GT = 0.1 A - 5 15 15 30 mA V T On-state voltage I T = 5 A - 1.4 1.70 V V GT Gate trigger voltage V D = 12 V; I T V D = 400 V; I T T j = 125 ˚C I D Off-state leakage current V D = V DRM(max) ; - 0.1 0.5 mA T j = 125 ˚C DYNAMIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D /dt Critical rate of rise of V DM =67% V DRM(max) ; 100 50 200 250 - V/ µs off-state voltage T j = 125 ˚C; exponential waveform; gate open circuit dV com /dt Critical rate of change of V DM = 400 V; T j commutating voltage I T(RMS) = 4 A; dI com /dt = 1.8 A/ms; gate open circuit t gt Gate controlled turn-on I TM = 6 A; V D = V DRM(max) ;- - - 2 - µs time I G = 0.1 A; dI G /dt = 5 A/µs; BT134 series 2014-6-13 www.kersemi.com

Fig.1. Maximum on-state dissipation, P tot , versus rms on-state current, I T(RMS) , where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current I TSM , versus pulse width t p , for sinusoidal currents, t p 20ms. Fig.3. Maximum permissible non-repetitive peak on-state current I TSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current I T(RMS) versus mounting base temperature T mb Fig.5. Maximum permissible repetitive rms on-state current I T(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; T mb 107˚C. Fig.6. Normalised gate trigger voltage V GT j )/ V GT (25˚C), versus junction temperature T j 012345 = 180 120 BT136 IT(RMS) / A Ptot / W Tmb(max) / C 125 122 119 116 113 110 107 104 101 -50 0 50 100 1500 BT136 Tmb / C IT(RMS) / A 107 C 10us 100us 1ms 10ms 100ms10 100 1000 BT136 T / s ITSM / A T ITSM time I Tj initial = 25 C max T dI /dt limit T T2- G+ quadrant 0.01 0.1 1 100 BT136 surge duration / s IT(RMS) / A 1 10 100 10000 BT136 Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT136 Tj / C VGT(Tj) VGT(25 C) BT134 series 2014-6-13 www.kersemi.com

Fig.7. Normalised gate trigger current I GT j )/ I GT (25˚C), versus junction temperature T j Fig.8. Normalised latching current I L j )/ I L (25˚C), versus junction temperature T j Fig.9. Normalised holding current I H j )/ I H (25˚C), versus junction temperature T j Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Z th j-mb , versus pulse width t p Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dI T /dt. The triac should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dI T /dt. -50 0 50 100 1500 0.5 1.5 2.5 BT136 Tj / C T2+ G+ T2+ G- T2- G- T2- G+ IGT(Tj) IGT(25 C) 0 0.5 1 1.5 2 2.5 30 BT136 VT / V IT / A Tj = 125 C Tj = 25 C typ max Vo = 1.27 V Rs = 0.091 ohms -50 0 50 100 1500 0.5 1.5 2.5 TRIAC Tj / C IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01 0.1 BT136 tp / s Zth j-mb (K/W) unidirectional bidirectional tp P t D -50 0 50 100 1500 0.5 1.5 2.5 TRIAC Tj / C IH(Tj) IH(25C) 0 50 100 1501 100 1000 1.83 Tj / C dIcom/dt = 5.1 3.9 2.3 dVcom/dt (V/us) A/ms 1.4 off-state dV/dt limit BT134...G SERIES BT134 SERIES BT134...F SERIES BT134 series 2014-6-13 www.kersemi.com