BT134-600D HAOPIN | Alldatasheet
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Main terminal 1 (T1) gate (G) Main terminal 2 (T2) Main terminal 2 (T2) UnitSYMBOL PARAMETER Value VDRM 600 V ITR M S 4 A ITSM 25 A Repetitive peak off-state voltages RMS on-state current full sine wave Non-repetitive peak on-state current SYMBOL PARAMETER MAX UNIT Rth j-a CONDITIONS TYPMIN - -100 Simplified outlineSymbol T2 T1 G 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs BT134-600DTM HPM Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. SOT-82 Thermal resistance Junction to mounting base In free air K/W K/W K/W Full cycle Half cycle 3.0 3.7 Thermal resistance Junction to ambient Rth j-mb
Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER CONDITIONS MIN Value UNIT SYMBOL PARAMETER CONDITIONS MIN VDRM IT(RMS) ITSM It IGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Non-repetitive surge peak on-statecurrent I t for fusing Peak gate current Average gate power Storage temperature Operating junction Temperature V A W full sine wave;, T= 2 5 prior to surge j T=10ms t=20ms t=16.7ms - 2 - 0.5 -40 600 125 150 T =25 C unless otherwise statedJ O Static characteristics IGT1 IL IH Dynamic Characteristics Latching current UNITMAXTYP 0.25 101.2 1.4 1.70 0.7 0.4 mA V A A A AS 3.1 1.5 0.50.1 - 50 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs BT134-600DTM HPM Over any 20 ms period PGM Peak gate power W VGM V dI /dtT Repetitive rate of rise of on-state current after triggering Peak gate voltage I =6A; I =0.2A;TM G DI /dt=0.2A/ sG T2+G+ T2+G- T2-G- T2-G+ A/ s A/ s A/ s A/ s Gate trigger current V =12V; I =0.1ADT T2+G+ T2+G- T2-G- T2-G+ 2.0 2.5 2.5 5.0 mA mA mA mA V =12V; I =0.1A DG T T2+G+ T2+G- T2-G- T2-G+ 1.6 4.5 1.2 2.2 mA mA mA mA Holding current V =12V; I =0.1A DG T VT On-state voltage I= 5 AT VGT Gate trigger voltage V =12V;I =0.1ADT V =400V;I =0.1A;T =125DTJ V V ID Off-state leakage current V =V ;T =125D DRM(max) J mA dV /dtD Critical rate of rise of Off-state voltage V =67% V ;Tj=125 ;DM DRM(max) Exponential wave form;R =1KGK tgt Gate controlled turn-on time Gate controlled turn-on time I= 6 A ; V = V ;TM D DRM(max) I =0.1A;G Dl /dt=5A/ sG s Full sine wave;T 107mb V/ s
Description
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs BT134-600DTM HPM
4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs BT134-600DTM HPM
HAOPIN MICROELECTRONICS CO.,LTD. BT134-600DTM HPM MECHANICAL DATA 5/5http://www.haopin.com Sensitive Gate Triacs Dimensions in mm Net Mass: 0.8 g SOT-82