BT131-8D HAOPIN | Alldatasheet
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Main terminal 1 (T1) gate (G) Main terminal 2 (T2) UnitSYMBOL PARAMETER Value VDRM 800 V ITR M S 1 A ITSM 16 A Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current SYMBOL PARAMETER MAX UNIT Rth j-a CONDITIONS TYPMIN - -150 Simplified outlineSymbol T2 T1 G 1/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs BT131-8DTM HPM Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. Thermal resistance Junction to mounting base K/W K/W K/W Full cycle Half cycle Thermal resistance Junction to ambient Rth j-mb TO-92 123 Pcb mounted; lead length=4mm
Limiting values in accordance with the Maximum system(IEC 134) 2/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM SYMBOL PARAMETER CONDITIONS MIN MAX UNIT SYMBOL PARAMETER CONDITIONS MIN VDRM IT(RMS) It DI /dtT IGM VGM PGM Tstg Tj PG(AV) Repetitive peak off-state Voltages RMS on-state current Non-repetitive peak On-state current I t for fusing Repetitive rate of vise of on-state current after trigering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction Temperature V V A W W Full sine wave;T <=51lead full sine wave;Tj=25 T=10ms I =1.5A; IG=0.2A;TM D /dt=0.2A/ sIG t=20ms t=16.7ms T2+G+ T2+G- T2-G- T2-G+ Over any 20 ms period -40 800 125 T =25 C unless otherwise statedJ O Static characteristics IGT IL IH VT VGT ID Dynamic Characteristics D/ d tVD tgt Gate trigger current Latching current On-state voltage Gate trigger voltage Off-state leakage current Critical rate of rise of Off-state voltage Gate controlled turn-on time V =12V; I =0.1ADT T2+G+ T2+G- T2-G- T2-G+ V =12V; I =0.1A DG T V =12V; I =0.1ADG T I =2.0AT V =12V;I =0.1ADT V =400V;I =0.1A;T =125DTJ V =V ;T =125D DRM(max) J UNITMAXTYP 0.2 1.3 1.2 1.5 0.7 0.3 0.1 0.5 mA mA V V =67% V ;Tj=125 ;DM DRM(max) Exponential wave form;R =1kGK I =1.5A;V =V ;TM D DRM(max) I =0.1A;G Dl /dt=5A/ sG 0.4 1.3 1.4 3.8 mA mA mA mA T2+G+ T2+G- T2-G- T2-G+ 1.2 4.0 1.0 2.5 mA mA mA mA A A A AS 17.6 1.28 1.5 V V 0.5 150 s 5 -15 V/ s s s s s BT131-8D
Description
3/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM BT131-8D
4/5http://www.haopin.com HAOPIN MICROELECTRONICS CO.,LTD. Sensitive Gate Triacs TM HPM BT131-8D
HAOPIN MICROELECTRONICS CO.,LTD. TM HPM MECHANICAL DATA 5/5http://www.haopin.com Sensitive Gate Triacs Dimensions in mm Net Mass: 0.2 g TO-92 BT131-8D