KSMT315P KERSEMI | Alldatasheet
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Technical content
Features
1) Low gate charge. 2) Green device available. 3) Advanced high cell denity trench technology for ultra RDS(ON) 4) Excellent package for good heat dissipation. SOT-223 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Continuous Drain Current-1 -1.17 A Continuous Drain Current-T=100℃ -0.94 Pulsed Drain Current2 — EAS Single Pulse Avalanche Energy3 24 mJ PD Power Dissipation4 1.8 W TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 ℃ Thermal Characteristics BVDSS RDSON ID -60V 0.8Ω -1.17A
KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET www.kersemi.com Package Marking and Ordering Information Part NO. Marking Package KSMT315P KSMT315P SOT-223 Electrical Characteristics TC=25℃ unless otherwise noted Symbol Parameter Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -60 — — v IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — -0.1 -1 μA IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 nA On Characteristics VGS(th) GATE-Source Threshold Voltage VDS=VDS, ID=250μA — — — V RDS(ON) Drain-Source On Resistance² VDS=10V ,ID=6A — 0.8 1.4 Ω VDS=2.5V ,ID=5A — 0.5 0.8 GFS Forward Transconductance VDS=5V,ID=12A — — — S Dynamic Characteristics Ciss Input Capacitance VDS=15V,VGS=0V , f=1MHz — 130 160 pF Coss Output Capacitance — 40 50 Crss Reverse Transfer Capacitance — 17 21 Switching Characteristics td(on) Turn-On Delay Time VDS=20V , VGS=10V,RGEN=3.3Ω — 24 36 ns tr Rise Time — 9 14 ns td(off) Turn-Off Delay Time — 32 48 ns tf Fall Time — 19 28 ns Qg Total Gate Charge VGS=4.5V , VDS=20V, ID=6A — 0.7 1.1 nC Qgs Gate-Source Charge — 1.8 2.6 nC Qgd Gate-Drain “Miller” Charge — 5.2 7.8 nC Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² VGS=0V,IS =1A — — — V trr Reverse Recovery Time IF=7A,di/dt=100A/μS — 30. 46 ns Qrr Reverse Recovery Charge — 36 54 nC Symbol Parameter Ratings Units RƟJC Thermal Resistance, Junction to Case1 — ℃/W RƟJA Thermal Resistance ,Junction to Ambient1 —
KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET www.kersemi.com Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper . 2. The data tested by pulse width≤300us,duty cycle≤2% 4. The power dissipation is limited by 150 ℃ junction temperature. Typical Characteristics TJ=25℃ unless otherwise noted
KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET www.kersemi.com
KERSMI ELECTRONIC CO.,LTD. -60V P-channel MOSFET www.kersemi.com