BSC034N03 EVVOSEMI | Alldatasheet

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N-Ch 30V Fast Switching MOSFETs Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 75 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 45 A IDM Pulsed Drain Current2 160 A EAS Single Pulse Avalanche Energy3 144.7 mJ IAS Avalanche Current 53.8 A PD@TC=25℃ Total Power Dissipation4 50 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit Thermal Resistance Junction-Ambient RθJA 1 --- ℃50 /W Thermal Resistance Junction-CaseRθJC 1 --- ℃2.5 /W BVDSS RDSON ID 30V 3.8mΩ 75A  Advanced Trench MOS Technology  Low Gate Charge  Low RDS(ON)  100% EAS Guaranteed Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and  Industrial. Green Device Available

Applications

PRPAK5X6 Pin Configuration Product Summary Features Rev:2023A2 1

Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V VGS=10V , ID=20 Static Drain-Source On-ResistanceRDS(ON) 2 A --- 3 3.8 VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.7 2.5 V IDSS VDS=30V , VGS=0V , TJ=25Drain-Source Leakage Current ℃ --- --- 1 uA VDS=30V , VGS=0V , TJ=55℃ --- --- 5 IGSS VGS=±20V , VDSGate-Source Leakage Current =0V --- ±10--- 0 nA gfs Forward Transconductance VDS=5V , ID=20A --- 75 --- S Qg Total Gate Charge (4.5V) VDS=20V , VGS=4.5V , ID=20A --- 23.4 --- nC Qgs Gate-Source Charge --- 11.4 --- Qgd Gate-Drain Charge --- 8.2 --- Td(on) Turn-On Delay Time VDD=15V , VGS=10V , RG=1.5 ID=20A --- 12.6 --- ns Tr Rise Time --- 9.6 --- Td(off) Turn-Off Delay Time --- 55 --- Tf Fall Time --- 5.6 --- Ciss Input Capacitance VDS=15V , VGS=0V , f=1MHz --- 2461 --- pF Coss Output Capacitance --- 383 --- Crss Reverse Transfer Capacitance --- 261 --- Symbol Parameter Conditions Min. Typ. Max. Unit Continuous Source Current1,IS 5 VG=VD=0V , Force Current --- --- 40 A VGS=0V , IS=1A , TJ=25Diode Forward VoltageVSD 2 ℃ --- --- 1 V Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.The maximum current rating is package limited. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Diode Characteristics BSC034N03 N-Ch 30V Fast Switching MOSFETs Rev:2023A2 2

Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized VGS(th) vs TJ Fig.6 Normalized RDSON vs TJ BSC034N03 N-Ch 30V Fast Switching MOSFETs Rev:2023A2 3

0.02 SINGLE PULSE DUTY=0.5 0.2 0.1 0.05 0.01 T T ON TJpeak = TC + PDM x RθJC Normalized Thermal Response (RθJC P OND = T DM 0.01 1010.1 t , Pulse Width (s) 0.0010.00010.00001 0.1 0.01 0.001 10% VD VGS S Td(off T Toff f)Td(on T Ton VDD-BV SSD SSDVBL x IAS 2 x2 EAS= BVDS VDD S IA VGS S Fig.8 Safe Operating Area Fig.9 Normalized Maximum Transient Thermal Impedance Fig.7 Capacitance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform BSC034N03 N-Ch 30V Fast Switching MOSFETs Rev:2023A2 4