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Page:P2-P1 Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE
FEATURES
or use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING B5817WS: SJ B5818WS:SK B5819WS: SL Maximum Ratings and Electrical Characteristics, Single Diode @TA=25 Paramete r Symbol B5817WS B5818WS B5819WS Unit Non-Repetitive Peak reverse voltage V RM 20 30 40 V Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RWM V R 20 30 40 V RMS Reverse Voltage V R(RMS) 14 21 28 V Average Rectified Output Current IO 1 A Peak forward surge current @=8.3ms IFSM 9 A Repetitive Peak Forward Current IFR M 1.5 A Power Dissipation Pd 250 mW ThermalResistanc Junction to Ambient R θJA 500 /W Storage temperature TSTG -65~+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Max Unit Reverse breakdown voltage V (BR) IR= 1mA 40 V Reverse voltage leakage current IR VR=20V B5817WS VR=30V B5818WS VR=40V B5819WS 1 mA Forward voltage V F B5817WS IF=1A IF=3A 0.45 0.75 V B5818WS IF=1A IF=3A 0.55 0.875 V B5819WS IF=1A IF=3A 0.6 0.9 V Diode capacitance C D VR=4V, f=1MHz 120 pF B5817WS B5818WS B5819WS SOD-323 - + B5817WS/B5818WS/B5819WS MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Diodes Typical Characteristics B5817WS/B5818WS/B5819WS MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/