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Page:P2-P1 Plastic-Encapsulate Diodes SCHOTTKY BARRIER DIODE
FEATURES
For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: SJ MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units Non-Repetitive Peak reverse voltage 20 V Peak Repetitive Peak reverse voltage 20 V Working Peak Reverse V oltage 20 V DC Blocking 20 V RMS Reverse V oltage 14 V Average Rectified Output Current 1 A Peak forward surge current @=8.3ms 9 A Repetitive Peak Forward Current 1.5 A Power Dissipation 500 mW Thermal Resistance Junction to Ambient 250 /W Storage temperature -65~+150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Reverse breakdown voltage V(BR) I = 1mA 20 V Reverse voltage leakage current IR V = 20V 1 mA Forward voltage VF I =1A I =3A 0.45 0.75 V V Diode capacitance CD VR=4V, f=1MHz 120 pF SOD-123 - + Parameter Symbol Test conditions MIN MAX UNIT VRM VRRM VRWM VR R(RMS) IO IFSM IFRM Pd RθJA TSTG R R F F B5817W MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Diodes Typical Characteristics B5817W MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/ MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/