AP6679GM-HF BYCHIP | Alldatasheet
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Technical content
Features
VDS= -30V, ID= -12A RDS(ON) < 9 mΩ @ VGS = -10V RDS(ON) < 12 mΩ @ VGS = -4.5V
- Advanced Trench Technology
- Provide Excellent RDS(ON) and Low Gate Charge
- Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features www.bychip.cn SOP-8 Schematic diagrampin assignment AP6679GM-HF v1.0
Parameter Symbol Condition Min Typ Max Unit OffCharacteristics Drain-SourceBreakdown Voltage BVDSS VGS=0VID=-250μA -30 - - V ZeroGateVoltageDrainCurrent IDSS VDS=-30V,VGS=0V - - -1 μA Gate-BodyLeakageCurrent IGSS VGS=±20V,VDS=0V - - ±100 nA OnCharacteristics (Note 3) GateThresholdVoltage VGS(th) VDS=VGS,ID=-250μA -1 -3.0 V Drain-SourceOn-StateResistance RDS(ON) VGS=-10V, ID=-10A - 9 mΩ VGS=-4.5V,ID=-7A - 12 mΩ ForwardTransconductance gFS VDS=-10V,ID=-10A - 20 - S Dynamic Characteristics(Note4) InputCapacitance Clss VDS=-15V,VGS=0V, F=1.0MHz - 2151 - PF OutputCapacitance Coss - 217 - PF ReverseTransfer Capacitance Crss - 187 - PF Switching Characteristics(Note 4) Turn-onDelayTime td(on) VDD=-15V, ID=-10A, VGS=-10V,RGEN=1Ω - 12 - nS Turn-onRiseTime tr - 10 - nS Turn-Off DelayTime td(off) - 25 - nS Turn-Off FallTime tf - 13 - nS TotalGateCharge Qg VDS=-15V,ID=-10A,VGS=-10V - 41.5 - nC Gate-SourceCharge Qgs - 5.5 - nC Gate-DrainCharge Qgd - 8.2 - nC Drain-SourceDiodeCharacteristics DiodeForward Current(Note 2) IS - - -12 A DiodeForward Voltage(Note 3) VSD VGS=0V,IS=-10A - - -1.2 V Notes: 1.Repetitive Rating: Pulse width limited by maximum junction temperature. 2.Surface Mounted on FR4 Board, t ≤10 sec. 3.Pulse Test: Pulse Width ≤300μs,Duty Cycle ≤ 2%. 4.Guaranteed by design, not subject to production 5.EAS condition: Tj=25℃,VDD=-15V,VG=10V,L=0.5mH,Rg=25Ω ElectricalCharacteristics(T A=25℃unlessotherwise noted) www.bychip.cn AP6679GM-HF v2.0
Typical Electricaland Thermal Characteristics Figure1:Switching Test Circuit TJ-JunctionTemperature(℃) Figure3PowerDissipation -Vds Drain-Source Voltage (V) Figure5Output Characteristics Figure2:Switching Waveforms TJ-JunctionTemperature(℃) Figure4 DrainCurrent -ID-Drain Current (A) Figure6Drain-SourceOn-Resistance PD Power(W) ID- Drain Current (A）Rdson On-Resistance(mΩ) -ID- Drain Current (A) www.bychip.cn AP6679GM-HF v3.0
-Vgs Gate-Source Voltage (V) Figure 7TransferCharacteristics -Vgs Gate-Source Voltage (V) Figure9 Rdson vs Vgs QgGate Charge (nC) Figure11GateCharge TJ-JunctionTemperature(℃) Figure8Drain-SourceOn-Resistance -Vds Drain-Source Voltage (V) Figure10Capacitancevs Vds -Vsd Source-Drain Voltage (V) Figure12Source-Drain DiodeForward -ID- Drain Current (A) Rdson On-Resistance(mΩ)-Vgs Gate-Source Voltage (V) Normalized On-ResistanceC Capacitance (pF)-Is-Reverse Drain Current (A) www.bychip.cn AP6679GM-HF v4.0