AK93C65BH

AK93C45B AKM | Alldatasheet

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ADVANCED CMOS EEPROM TECHNOLOGY READ/WRITE NON-VOLA TILE MEMORY WIDE VCC OPERA TION Vcc = 1.8V 5.5V AK93C45B /G01 /G01 /G01 1024 bits, 64 16 organization AK93C55B /G01 /G01 /G01 2048 bits, 128 16 organization AK93C65B /G01 /G01 /G01 4096 bits, 256 16 organization AK93C75B /G01 /G01 /G01 8192 bits, 512 16 organization SERIAL INTERFACE - Interfaces with popular microcontrollers and standard microprocessors LOW POWER CONSUMPTION - 0.8A Max. Standby HIGH RELIABILITY -Endurance : 100K cycles -Data Retention : 10 years Automatic address increment (READ) Automatic write cycle time-out with auto-ERASE Busy/Ready status signal Software controlled write protection IDEAL FOR LOW DENSITY DA T A STORAGE - Low cost, space saving, 8-pin package (MSOP) Block Diagram

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 2 - General Description The AK93C45B/55B/65B/75B is a 1024/2048/4096/8192-bit serial CMOS EEPROM divided into 64/128/256/512 registers of 16 bits each. The AK93C45B/55B/65B/75B has 4 instructions such as READ, WRITE, EWEN and EWDS. Those instructions control the AK93C45B/55B/65B/75B. The AK93C45B/55B/65B/75B can operate full function under wide operating voltage range from 1.8V to 5.5V . The charge up circuit is integrated for high voltage generation that is used for write operation. A serial interface of AK93C45B/55B/65B/75B, consisting of chip select (CS), serial clock (SK), data-in (DI) and data-out (DO), can easily be controlled by popular microcontrollers or standard microprocessors. AK93C45B/55B/65B/75B takes in the write data from data input pin (DI) to a register synchronously with rising edge of input pulse of serial clock pin (SK). And at read operation, AK93C45B/55B/65B/75B takes out the read data from a register to data output pin (DO) synchronously with rising edge of SK. The DO pin is usually in high impedance state. The DO pin outputs "L" or "H" in case of data output or Busy/Ready signal output. /G01 Software and Hardware controlled write protection When Vcc is applied to the part, the part automatically powers up in the ERASE/WRITE Disable state. In the ERASE/WRITE disable state, execution of WRITE instruction is disabled. Before WRITE instruction is executed, EWEN instruction must be executed. The ERASE/WRITE enable state continues until EWDS instruction is executed or Vcc is removed from the part. Execution of a read instruction is independent of both EWEN and EWDS instructions. The PE is internally pulled up to VCC. If the PE is left unconnected, the part will accept WRITE, EWEN and EWDS instructions. /G01 /G01 AK93C55B/65B/75B /G01 Busy/Ready status signal After a write instruction, the DO output serves as a Busy/Ready status indicator. After the falling edge of the CS initiates the self-timed programming cycle, the DO indicates the Busy/Ready status of the chip if the CS is brought high after a minimum of 250ns (Tcs). DO=logical "0" indicates that programming is still in progress. DO=logical "1" indicates that the register at the address specified in the instruction has been written with the new data pattern contained in the instruction and the part is ready for a next instruction. The Busy/Ready status indicator is only valid when CS is active (high). When CS is low, the DO output goes into a high impedance state. The Busy/Ready signal outputs until a start bit (Logic"1") of the next instruction is given to the part. /G01/G01 Type of Products Model Memory size T emp.Range Vcc Package AK93C45BH 1Kbits -40 /G01 C /G02 85/G01 C1 . 8 V /G02 5.5V 8pin Plastic MSOP AK93C55BH 2Kbits -40 /G01 C /G02 85/G01 C1 . 8 V /G02 5.5V 8pin Plastic MSOP AK93C65BH 4Kbits -40 /G01 C /G02 85/G01 C1 . 8 V /G02 5.5V 8pin Plastic MSOP AK93C75BH 8Kbits -40 /G01 C /G02 85/G01 C1 . 8 V /G02 5.5V 8pin Plastic MSOP

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 3 - Pin arrangement Pin Name Function CS Chip Select SK Serial Data Clock DI Serial Data Input DO Serial Data Output PE Program Enable GND Ground Vcc Power Supply NC Not Connected (Note) The PE is internally pulled up to VCC ( R = typ.2.5M/G03 , VCC=5V ).

READ 1 10 A5-A0 D15-D0 Reads data stored in memory, at specified address. WRITE 1 01 A5-A0 D15-D0 Writes register. EWEN 1 00 11XXXX Write enable must precede all programming modes. EWDS 1 00 00XXXX Disables all programming instructions. WRAL 1 00 01XXXX D15-D0 Writes all registers. table 1. Instruction Set for the AK93C45B READ 1 10 X A6-A0 D15-D0 Reads data stored in memory, at specified address. WRITE 1 01 X A6-A0 D15-D0 Writes register. EWEN 1 00 11XXXXXX Write enable must precede all programming modes. EWDS 1 00 00XXXXXX Disables all programming instructions. WRAL 1 00 01XXXXXX D15-D0 Writes all registers. table 2. Instruction Set for the AK93C55B READ 1 10 A7-A0 D15-D0 Reads data stored in memory, at specified address. WRITE 1 01 A7-A0 D15-D0 Writes register. EWEN 1 00 11XXXXXX Write enable must precede all programming modes. EWDS 1 00 00XXXXXX Disables all programming instructions. WRAL 1 00 01XXXXXX D15-D0 Writes all registers. table 3. Instruction Set for the AK93C65B READ 1 10 XA8-A0 D15-D0 Reads data stored in memory, at specified address. WRITE 1 01 XA8-A0 D15-D0 Writes register. EWEN 1 00 11XXXXXXXX Write enable must precede all programming modes. EWDS 1 00 00XXXXXXXX Disables all programming instructions. WRAL 1 00 01XXXXXXXX D15-D0 Writes all registers. table 4. Instruction Set for the AK93C75B (Note) /G01 The WRAL instruction are used for factory function test only. User can't use the WRAL instruction. /G01 The AK93C45B/55B/65B/75B perceives the start bit in the logic"1" and also "01".

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 5 - Write The write instruction is followed by 16 bits of data to be written into the specified address. After the last bit of data is put on the DI pin, the CS pin must be brought low before the next rising edge of the SK clock. This falling edge of the CS initiates the self-timed programming cycle. The DO indicates the Busy/Ready status of the chip if the CS is brought high after a minimum of 250ns (Tcs). DO=logical "0" indicates that programming is still in progress. DO=logical "1" indicates that the register at the address specified in the instruction has been written with the new data pattern contained in the instruction and the part is ready for a next instruction. WRITE (AK93C45B) *Address bit A7 becomes a “don’t care” for AK93C55B. WRITE (AK93C55B/65B) WRITE (AK93C75B)

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 6 - Read The read instruction is the only instruction which outputs serial data on the DO pin. Following the Start bit, first Op code and address are decoded, then the data from the selected memory location is available at the DO pin. A dummy bit (logical "0") precedes the 16-bit data from the selected memory location. The output data changes are synchronized with the rising edges of the serial clock (SK). The data in the next address can be read sequentially by continuing to provide clock. The address automatically cycles to the next higher address after the 16bit data shifted out. When the highest address is reached, the address counter rolls over to address $00 or $000 allowing the read cycle to be continued indefinitely. READ (AK93C45B) *Address bit A7 becomes a "don't care" for AK93C55B. READ (AK93C55B/65B) READ (AK93C75B)

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 7 - EWEN / EWDS When Vcc is applied to the part, the part automatically powers up in the ERASE/WRITE Disable state. In the ERASE/WRITE disable state, execution of WRITE instruction is disable. Before WRITE instruction is executed, EWEN instruction must be executed. The ERASE/WRITE enable state continues until EWDS instruction is executed or Vcc is removed from the part. Execution of a read instruction is independent of both EWEN and EWDS instructions. EWEN/EWDS (AK93C45B) EWEN/EWDS (AK93C55B/65B) EWEN/EWDS (AK93C75B)

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 8 - Absolute Maximum Ratings Parameter Symbol Min Max Unit Power Supply VCC -0.6 +7.0 V All Input Voltages with Respect to Ground VIO -0.6 VCC+0.6 V Ambient storage temperature Tst -65 +150 /G01 C Stress above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specification is not implied. Exposure to absolute maximum conditions for extended periods may affect device reliability. Recommended Operating Condition Parameter Symbol Min Max Unit Power Supply VCC 1.8 5.5 V Ambient Operating T emperature T a -40 +85 /G01 C

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 9 -

Electrical Characteristics

(1) D.C. ELECTRICAL CHARACTERISTICS /G01 AK93C45B/55B/65B ( 1.8V/G04 Vcc/G04 5.5V , -40/G01 C /G04 Ta/G04 85/G01 C, unless otherwise specified ) Parameter Symbol Condition Min. Max. Unit ICC1 VCC=5.5V , tSKP=1us, *1 4.0 mA 93C45B 1.5 mA Current Dissipation (WRITE) ICC2 VCC=1.8V , tSK=4us,*1 93C55B/65B 2.0 mA ICC3 VCC=5.5V , tSKP=1us, *1 0.5 mA ICC4 VCC=2.5V , tSKP=2us, *1 0.2 mA Current Dissipation (READ,EWEN,EWDS) ICC5 VCC=1.8V , tSKP=4us, *1 0.1 mA Current Dissipation (Standby) ICCSB VCC=5.5V *2 0.8 uA VIH1 VCC=5V /G01 10% 2.0 VCC+0.5 V VIH2 2.5V /G04 VCC /G04 5.5V 0.8 /G02 VCC VCC+0.5 V Input High Voltage VIH3 1.8V /G04 VCC<2.5V 0.8 /G02 VCC VCC+0.5 V VIL1 VCC=5V /G01 10% -0.1 0.8 V VIL2 2.5V /G04 VCC /G04 5.5V -0.1 0.15 /G02 VCC V Input Low Voltage VIL3 1.8V /G04 VCC<2.5V -0.1 0.2 /G02 VCC V VOH1 VCC=5V /G01 10% IOH=-0.4mA 2.2 V VOH2 2.5V /G04 VCC /G04 5.5V IOH=-0.1mA 0.8 /G02 VCC V Output High Voltage VOH3 1.8V /G04 VCC<2.5V IOH=-0.1mA 0.8 /G02 VCC V VOL1 VCC=5V /G01 10% IOL=1.5mA 0.4 V VOL2 2.5V /G04 VCC /G04 5.5V IOL=1.0mA 0.4 V Output Low Voltage VOL3 1.8V /G04 VCC<2.5V IOL=0.1mA 0.4 V Input Leakage ILI VCC=5.5V,VIN=5.5V *3 /G01 1.0 uA Output Leakage ILO VCC=5.5V VOUT=5.5V,CS=GND /G01 1.0 uA *1: VIN=VIH/VIL,DO=Open *2: VIN=VCC/GND,CS=GND,DO=Open *3: CS, SK, DI pin

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 10 - /G01 AK93C75B ( 1.8V/G04 Vcc/G04 5.5V , -40/G01 C /G04 Ta/G04 85/G01 C, unless otherwise specified ) Parameter Symbol Condition Min. Max. Unit ICC1 VCC=5.5V , tSKP=1us, *4 4.0 mACurrent Dissipation (WRITE) ICC2 VCC=1.8V , tSKP=4us, *4 2.0 mA ICC3 VCC=5.5V , tSKP=1us, *4 0.4 mACurrent Dissipation (READ,EWEN,EWDS) ICC4 VCC=1.8V , tSKP=4us, *4 0.1 mA Current Dissipation (Standby) ICCSB VCC=5.5V *5 0.8 uA Input High Voltage VIH 0.8 /G02 VCC VCC+0.5 V Input Low Voltage VIL -0.1 0.2 /G02 VCC V VOH1 2.5V /G04 VCC /G04 5.5V IOH=-0.1mA 0.8 /G02 VCC VOutput High Voltage VOH2 1.8V /G04 VCC<2.5V IOH=-0.1mA 0.8 /G02 VCC V VOL1 2.5V /G04 VCC /G04 5.5V IOL=1.0mA

0.4 VOutput Low Voltage

VOL2 1.8V /G04 VCC<2.5V IOL=0.1mA 0.4 V Input Leakage ILI VCC=5.5V,VIN=5.5V *6 /G01 1.0 uA Output Leakage ILO VCC=5.5V VOUT=5.5V,CS=GND /G01 1.0 uA *4: VIN=VIH/VIL,DO=Open *5: VIN=VCC/GND,CS=GND,DO=Open *6: CS, SK, DI pin

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 11 - (2) A.C. ELECTRICAL CHARACTERISTICS ( 1.8V/G04 Vcc/G04 5.5V , -40/G01 C /G04 Ta/G04 85/G01 C, unless otherwise specified ) Parameter Symbol Condition Min. Max. Unit tSKP1 4.5V /G04 VCC /G04 5.5V 1.0 us tSKP2 2.0V /G04 VCC<4.5V 2.0 us SK Cycle Time tSKP3 1.8V /G04 VCC<2.0V 4.0 us tSKW1 4.5V /G04 VCC /G04 5.5V 500 ns tSKW2 2.0V /G04 VCC<4.5V 1.0 us SK Pulse Width tSKW3 1.8V /G04 VCC<2.0V 2.0 us CS Setup Time tCSS 100 ns CS Hold Time tCSH 0 ns Data Setup Time tDIS 200 ns Data Hold Time tDIH 200 ns tPD1 4.5V /G04 VCC /G04 5.5V 500 ns tPD2 2.0V /G04 VCC<4.5V 1.0 us Output delay *7 tPD3 1.8V /G04 VCC<2.0V 2.0 us tE/W1 93C45B/55B/65B 10 ms tE/W2 4.5V /G04 VCC /G04 5.5V 8 ms Selftimed Programming Time tE/W3 93C75B 1.8V/G04 VCC<4.5V 10 ms Min CS Low Time tCS 250 ns CS to Status Valid tSV CL=100pF 500 ns tOZ1 2.0V /G04 VCC /G04 5.5V 100 nsCS to Output High-Z tOZ2 1.8V /G04 VCC<2.0V 250 ns *7: CL=100pF

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 12 - Synchronous Data Timing The Start of Instruction The End of Instruction

ASAHI KASEI [AK93C45B/55B/65B/75B] DAM04E-01 1999/10 - 13 - Busy/Ready Signal Output

zThese products and their specifications are subject to change without notice. Before considering any use or application, consult the Asahi Kasei Microsystems Co., Ltd. (AKM) sales office or authorized distributor concerning their current status. zAKM assumes no liability for infringement of any patent, intellectual property, or other right in the application or use of any information contained herein. zAny export of these products, or devices or systems containing them, may require an export license or other official approval under the law and regulations of the country of export pertaining to customs and tariffs, currency exchange, or strategic materials. zAKM products are neither intended nor authorized for use as critical components in any safety, life support, or other hazard related device or system, and AKM assumes no responsibility relating to any such use, except with the express written consent of the Representative Director of AKM. As used here: (a) A hazard related device or system is one designed or intended for life support or maintenance of safety or for applications in medicine, aerospace, nuclear energy, or other fields, in which its failure to function or perform may reasonably be expected to result in loss of life or in significant injury or damage to person or property. (b) A critical component is one whose failure to function or perform may reasonably be expected to result, whether directly or indirectly, in the loss of the safety or effectiveness of the device or system containing it, and which must therefore meet very high standards of performance and reliability. zIt is the responsibility of the buyer or distributor of an AKM product who distributes, disposes of, or otherwise places the product with a third party to notify that party in advance of the above content and conditions, and the buyer or distributor agrees to assume any and all responsibility and liability for and hold AKM harmless from any and all claims arising from the use of said product in the absence of such notification.