ACST4 KERSEMI | Alldatasheet
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Technical content
n Blocking voltage : V DRM RRM = +/-700V n Avalanche controlled : V CL typ = 1100 V n Nominal conducting current : I T(RMS) =4 A n High surge current capability: 30A for 20ms full wave n Gate triggering current : I GT < 10 mA or 25mA n Switch integrated driver n High noise immunity : static dV/dt >500V/µs
FEATURES
The ACST4 belongs to the AC power switch family built around the ASD™ technology. This high per- formance device is adapted to home appliances or inductrial systems and drives loads up to 4 A. The ACS™ switch embeds a Triac structure with a high voltage clamping device to absorb the induc- tive turn-off energy and withstand line transients such as those described in the IEC61000-4-5 stan- dards.
DESCRIPTION
G n Enables equipment to meet IEC 61000-4-5 n High off-state reliability with planar technology n No external overvoltage protection needed n Reduces the power component factor n Interfaces directly with the microcontroller n Direct interface with the microcontroller for the ACST4-7S (I GT < 10mA) BENEFITS OUT COM G FUNCTIONAL DIAGRAM TO-220FPAB ACST4-7SFP/CFP OUT COM G n AC static switching in appliance control systems n Drive of low power high inductive or resistive loads like - spray pump in dishwashers - fan in air-conditioners MAIN APPLICATIONS www.kersemi.com
Symbol Parameter Value Unit V DRM RRM Repetitive peak off-state voltage Tj = -10 °C 700 V I T(RMS) RMS on-state current full cycle sine wave 50 to 60 Hz DPAK Tc = 110 °C 4 A TO-220FPAB Tc = 100 °C I TSM Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave F =50 Hz 30 A F =60 Hz 33 A I t Fusing capability tp = 10ms 6.4 A²s dI/dt Repetitive on-state current critical rate of rise I G = 10mA (tr < 100ns) Tj = 125°C F = 120 Hz 50 A/ µs V PP Non repetitive line peak pulse voltage note 1 2k V Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 30 to + 125 °C Tl Maximum lead soldering temperature during 10s 260 °C Note 1: according to test described by IEC61000-4-5 standard & Figure B. ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol Parameter Value Unit P G (AV) Average gate power dissipation 0.1 W P GM Peak gate power dissipation (tp = 20µs) 10 A I GM Peak gate current (tp = 20µs) 1 V GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient S = 0.5cm² DPAK 70 °C/W TO-220FPAB 60 °C/W Rth (j-l) Junction to case for full cycle sine wave conduction DPAK 2.6 °C/W TO-220FPAB 4.6 °C/W S = Copper surface under Tab THERMAL RESISTANCES www.kersemi.com
Symbol Test Conditions ACST4-7S ACST4-7C Unit I GT V OUT =12V (DC) R L =33Ω QI - QII - QIII Tj=25°C MAX 10 25 mA V GT V OUT =12V (DC) R L =33Ω QI - QII - QIII Tj=25°C MAX 1 1.1 V V GD V OUT DRM R L =3.3kΩ Tj=125°C MIN 0.2 V I H I OUT = 100mA gate open Tj=25°C MAX 20 35 mA I L I G =2xI Gt max Tj=25°C MAX 40 60 mA V TM I OUT = 5.6A tp=380µs Tj=25°C MAX 1.5 V V TO Tj=125°C MAX 0.90 V Rd Tj=125°C MAX 100 m Ω I DRM I RRM V OUT = 700V Tj=25°C MAX 10 µA Tj=125°C MAX 500 dV/dt V OUT =460V gate open Tj=110°C MIN 200 500 V/ µs (dI/dt)c (dV/dt)c = 15V/µs Tj=125°C MIN 2.0 2.5 A/ms V CL I CL = 1mA tp=1ms Tj=25°C TYP 1100 V
ELECTRICAL CHARACTERISTICS
For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage. Parameter Symbol Parameter description I GT Triggering gate current V GT Triggering gate voltage V GD Non-triggering gate voltage I H Holding current I L Latching current V TM Peak on-state voltage drop V TO On state threshold voltage Rd On state dynamic resistance I DRM RRM Maximum forward or reverse leakage current dV/dt Critical rate of rise of off-state voltage (dV/dt)c Critical rate of rise of commutating off-state voltage (dI/dt)c Critical rate of decrease of commutating on-state current V CL Clamping voltage I CL Clamping current PARAMETER DESCRIPTION www.kersemi.com
The ACST4 device has been designed to switch on & off low power, but highly inductive or resistive loads such as dishwashers spray pumps, and air-conditioners fan. Pin COM: Common drive reference to connect to the power line neutral Pin G: Switch Gate input to connect to the digital controller Pin OUT: Switch Output to connect to the load ACST4-7S triggering current has to be sunk from the gate pin G. The switch can then be driven directly by logic level circuits through a resistor as shown on the typical application diagram ( Fig A ). Thanks to its thermal and turn off commutation performances, the ACST4 switch is able to drive with no turn off additional snubber an inductive load up to 4 A. AC LINE SWITCH BASIC APPLICATION OUT COM G ACST4 ST72 MCU N AC MAINS L R - Vcc M LOAD OUT L TYPICAL APPLICATION DIAGRAM (Fig. A) www.kersemi.com
L R V AC PP SURGE VOLTAGE AC LINE & GENERATOR RG = 220Ω COM OUT G ACST4 Fig. B:Overvoltage ruggedness test circuit for re- sistive and inductive loads according to IEC61000-4-5 standards. R = 150Ω , L = 10µH, V PP = 2kV. Fig. C:Current and Voltage of the ACST4 dur- ing IEC61000-4-5 standard test with R,L&V PP 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 I (A) T(RMS) α =180° P(W) 180° α α Fig. 1:Maximum power dissipation versus RMS on-state current. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 25 50 75 100 125 Tc(°C) α =180° DPAK TO-220FPAB I (A) T(RMS) Fig. 2-1: RMS on-state current versus case temperature. www.kersemi.com
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 25 50 75 100 125 Tamb(°C) α =180° Printed circuit board FR4 Natural convection S=0.5cm² I (A) T(RMS) Fig. 2-2:RMS on-state current versus ambient temperature. 0.01 0.10 1.00 tp(s) Zth (j-a) Zth (j-c) DPAK TO-220FPAB DPAK TO-220FPAB K = [Zth/Rth] Fig. 3:Relative variation of thermal impedance versus pulse duration. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(°C) I GT I L & I H I , I , I [Tj] / I , I , I [Tj = 25°C] G THL G THL Fig. 4:Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values). 25 50 75 100 125 Tj(°C) V out =460V dV/dt [Tj] / dV/dt [Tj = 125°C] Fig. 5:Relative variation of static dV/dt versus junction temperature. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1 02 03 04 05 06 07 08 09 0 1 0 0 (dV/dt)c(V/µs) V out =300V ACST4-7C (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c Fig. 6-1:Relative variation of critical rate of de- crease of main current versus reapplied dV/dt (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 5 10 15 20 25 30 35 40 45 50 V out =300V ACST4-7S (dV/dt)c(V/µs) Fig. 6-2:Relative variation of critical rate of de- crease of main current versus reapplied dV/dt (typical values). www.kersemi.com
T j initial=25°C Repetitive T C =100°C t=20ms I (A) TSM Fig. 8:Surge peak on-state current versus number of cycles. 100 1000 0.01 0.10 1.00 10.00 tp(ms) T j initial=25°C dI/dt limitation: 50A/µs I TSM I²t I (A), I²t (A²s) TSM Fig. 9:Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 0.10 1.00 10.00 100.00 V (V) TM Tj max. : V to = 0.90 V R d = 100 mΩ T j =25°C T j =125°C I (A) TM Fig. 10: On-state characteristics (maximum values). 100 0 5 10 15 20 25 30 35 40 S(cm²) DPAK Rth(j-a)(°C/W) Fig. 11:Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) 25 50 75 100 125 Tj(°C) V out =300V (dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C] Fig. 7:Relative variation of critical rate of decrease of main current versus junction temperature. www.kersemi.com
PACKAGE OUTLINE MECHANICAL DATA DPAK REF. DIMENSIONS Millimeters Inches Min. Max Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° 6.7 6.7 1.61.6 2.32.3 FOOT PRINT DPAK ACST 4 - 7 X X AC Switch I 4 = 4A T(RMS) V 7 = 700V DRM Gate Sensitivity S= 10mA C = 25mA Package B = DPAK FP = TO-220FPAB
ORDERING INFORMATION
www.kersemi.com
PACKAGE OUTLINE MECHANICAL DATA TO-220FPAB Ordering type Marking Package Weight Base qty Delivery mode ACST4-7SB ACST47S DPAK 0.3 g 75 Tube ACST4-7SB-TR ACST47S DPAK 0.3 g 2500 Tape & reel ACST4-7SFP ACST47S TO-220FPAB 2.4 g 50 Tube ACST4-7CB ACST47C DPAK 0.3 g 75 Tube ACST4-7CB-TR ACST47C DPAK 0.3 g 2500 Tape & reel ACST4-7CFP ACST47C TO-220FPAB 2.4 g 50 Tube Epoxy meets UL94,V0 OTHER INFORMATION H G F D E A B Dia REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 www.kersemi.com