ACS14MS INTERSIL | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 2

Technical content

Features

  • QML Qualified Per MIL-PRF-38535 Requirements
  • 1.25 Micron Radiation Hardened SOS CMOS
  • Radiation Environment - Latch-Up Free Under any Conditions

5 RAD (Si)

Applications

  • High Speed Control Circuits
  • Sensor Monitoring
  • Low Power Designs

Ordering Information

ORDERING NUMBER INTERNAL MKT. NUMBER TEMP. RANGE ( oC) PACKAGE DESIGNATOR 5962F9862301VCC ACS14DMSR-03 -55 to 125 14 Ld SBDIP CDIP2-T14 ACS14D/SAMPLE-03 ACS14D/SAMPLE-03 25 14 Ld SBDIP CDIP2-T14 5962F9862301VXC ACS14KMSR-03 -55 to 125 14 Ld Flatpack CDFP4-F14 ACS14K/SAMPLE-03 ACS14K/SAMPLE-03 25 14 Ld Flatpack CDFP4-F14 5962F9862301V9A ACS14HMSR-03 25 Die N/A Pinouts ACS14MS (SBDIP) TOP VIEW ACS14MS (FLATPACK) TOP VIEW GND VCC 1A1 GND VCC Data Sheet November 1998 File Number 4544 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999

All Intersil semiconductor products are manufactured, assembled and tested underISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with- out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web sitewww.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 Die Characteristics DIE DIMENSIONS: Size: 2390µm x 2390µm (94 mils x 94 mils) Thickness: 525µm ± 25µm (20.6 mils± 1 mil) Bond Pad: 110µm x 110µm (4.3 x 4.3 mils) METALLIZATION: AL Metal 1 Thickness: 0.7µm ± 0.1µm Metal 2 Thickness: 1.0µm ± 0.1µm SUBSTRATE POTENTIAL: Unbiased Insulator PASSIVATION Type: Phosphorous Silicon Glass (PSG) Thickness: 1.30µm ± 0.15µm SPECIAL INSTRUCTIONS: Bond VCC First ADDITIONAL INFORMATION: Worst Case Current Density: <2.0 x 105 A/cm2 Transistor Count: 130 Metallization Mask Layout ACS14MS Y1 A1 VCC A6 A2 (3) Y2 (4) NC A3 (5) (12)Y6 (11) A5 NC (10)Y5 (6) (7) (8) (9) A4Y4GNDY3 (2) (1) (14) (13) ACS14MS