ACS120-7SB KERSEMI | Alldatasheet

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Technical content

n Blocking voltage : V DRM RRM = +/-700V n Avalanche controlled : V CL typ = 1100 V n Nominal conducting current : I T(RMS) =2 A n Gate triggering current : I GT <1 0m A n Switch integrated driver n High noise immunity : static dV/dt >500V/µs

FEATURES

The ACS120 belongs to the AC line switch family built around the ASD™ concept. This high perfor- mance switch circuit is able to control a load up to 2 The ACS™ switch embeds a high voltage clamp- ing structure to absorb the inductive turn off energy and a gate level shifter driver to separate the digital controller from the main switch. It is triggered with a negative gate current flowing out of the gate pin.

DESCRIPTION

G n Needs no more external protection snubber or varistor n Enables equipment to meet IEC 61000-4-5 n Reduces component count up to 80 % n Interfaces directly with the microcontroller n Eliminates any gate kick back on the microcontroller n Allows straightforward connection of several ACS™ on same cooling pad. BENEFITS OUT COM G S D ON FUNCTIONAL DIAGRAM TO-220FPAB ACS120-7SFP OUT COM G n AC static switching in appliance control systems n Drive of low power high inductive or resistive loads like - relay, valve, solenoid, dispenser - pump, fan, micro-motor - defrost heater MAIN APPLICATIONS OUT COM G TO-220AB ACS120-7ST www.kersemi.com

Symbol Parameter Value Unit V DRM RRM Repetitive peak off-state voltage Tj = -10 °C 700 V I T(RMS) RMS on-state current full cycle sine wave 50 to 60 Hz DPAK Tc = 115 °C 2 A TO-220FPAB Tc = °C TO-220AB Tc = 115 °C I TSM Non repetitive surge peak on-state current Tj initial = 25°C, full cycle sine wave F =50 Hz 20 A F =60 Hz 11 A I t Fusing capability tp = 10ms 2.2 A²s dI/dt Repetitive on-state current critical rate of rise I G = 10mA (tr < 100ns) Tj = 125°C F = 120 Hz 50 A/ µs V PP Non repetitive line peak pulse voltage note 1 2k V Tstg Storage temperature range - 40 to + 150 °C Tj Operating junction temperature range - 30 to + 125 °C Tl Maximum lead soldering temperature during 10s 260 °C Note 1: according to test described by IEC61000-4-5 standard & Figure 3. ABSOLUTE RATINGS (limiting values) For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage Symbol Parameter Value Unit P G (AV) Average gate power dissipation 0.1 W I GM Peak gate current (tp = 20µs) 1 A V GM Peak positive gate voltage (in respect to pin COM) 5 V GATE CHARACTERISTICS (maximum values) Symbol Parameter Value Unit Rth (j-a) Junction to ambient S = 0.5cm² DPAK 70 °C/W TO-220FPAB 60 °C/W TO-220AB 60 °C/W Rth (j-l) Junction to tab/lead for full cycle sine wave conduction DPAK 2.6 °C/W TO-220FPAB 3.5 °C/W TO-220AB 2.6 °C/W S = Copper surface under Tab THERMAL RESISTANCES www.kersemi.com

Symbol Test Conditions Values Unit I GT V OUT =12V (DC) R L =140Ω QII - QIII Tj=25°C MAX 10 mA V GT V OUT =12V (DC) R L =140Ω QII - QIII Tj=25°C MAX 1 V V GD V OUT DRM R L =3.3kΩ Tj=125°C MIN 0.15 V I H I OUT = 100mA gate open Tj=25°C MAX 45 mA I L I G = 20mA Tj=25°C MAX 65 mA V TM I OUT = 2.8A tp=380µs Tj=25°C MAX 1.3 V V TO Tj=125°C MAX 0.85 V Rd Tj=125°C MAX 200 m Ω I DRM I RRM V OUT = 700V Tj=25°C MAX 2 µA Tj=125°C MAX 200 dV/dt V OUT =460V gate open Tj=110°C MIN 500 V/ µs (dI/dt)c (dV/dt)c = 20V/µs Tj=125°C MIN 1 A/ms V CL I CL = 1mA tp=1ms Tj=25°C TYP 1100 V

ELECTRICAL CHARACTERISTICS

For either positive or negative polarity of pin OUT voltage in respect to pin COM voltage. Parameter Symbol Parameter description I GT Triggering gate current V GT Triggering gate voltage V GD Non-triggering gate voltage I H Holding current I L Latching current V TM Peak on-state voltage drop V TO On state threshold voltage Rd On state dynamic resistance I DRM RRM Maximum forward or reverse leakage current dV/dt Critical rate of rise of off-state voltage (dV/dt)c Critical rate of rise of commutating off-state voltage (dI/dt)c Critical rate of decrease of commutating on-state current V CL Clamping voltage I CL Clamping current PARAMETER DESCRIPTION www.kersemi.com

The ACS120 device is well adapted to Washing machine, dishwasher, tumble drier, refrigerator, air-conditioning systems, and cookware. It has been designed especially to switch on & off low power loads such as solenoid, valve, relay, dispenser, micro-motor, pump, fan and defrost heaters. Pin COM: Common drive reference to connect to the power line neutral Pin G: Switch Gate input to connect to the digital controller Pin OUT: Switch Output to connect to the load This ACS™ switch is triggered with a negative gate current flowing out of the gate pin G. It can be driven di- rectly by the digital controller through a resistor as shown on the typical application diagram. Thanks to its thermal and turn off commutation performances, the ACS120 switch is able to drive with no turn off additional snubber an inductive load up to 2 A. AC LINE SWITCH BASIC APPLICATION OUT ACS120 COM G S D ON ST72 MCU N AC MAINS L R - Vcc L M LOAD TYPICAL APPLICATION DIAGRAM www.kersemi.com

Fig. A:Turn-off operation of the ACS120 switch with an electro-valve: waveform of the pin OUT current I OUT and voltage V OUT V OUT I OUT V CL I H Fig. B:ACS120 switch static characteristic. The ACS120 switch is able to sustain safely the AC line transient voltages either by clamping the low en- ergy spikes or by breaking over under high energy shocks, even with high turn-on current rises. The test circuit of the figure C is representative of the final ACS application and is also used to stress the ACS switch according to the IEC 61000-4-5 standard conditions. Thanks to the load, the ACS switch sus- tains the voltage spikes up to 2 kV above the peak line voltage. It will break over safely even on resistive load where the turn on current rise is high as shown on figure D. Such non repetitive test can be done 10 times on each AC line voltage polarity. AC LINE TRANSIENT VOLTAGE RUGGEDNESS L R V AC PP SURGE VOLTAGE AC LINE & GENERATOR RG = 220Ω COM OUT G S D ON ACSxx Fig. C:Overvoltage ruggedness test circuit for resistive and inductive loads according to IEC61000-4-5 standards. R = 150Ω , L = 10µH, V PP = 2kV. Fig. D:Current and Voltage of the ACS120 dur- ing IEC61000-4-5 standard test with R,L&V PP www.kersemi.com

Maximum power dissipation vs RMS on state current. RMS on-state current vs ambient temperature, case temperature Relative variation of thermal impedance junction to ambient vs pulse duration and package Relative variation of gate trigger current vs junction temperature Relative variation of holding, latching and gate current vs junction Relative variation of dV/dt vs Tj Relative variation of (dV/dt) c vs (di/dt) c Surge peak on-state current vs number of cycles Non repetitive surge peak on-state current for a sinusoidal pulse with tp<10ms, and corresponding of I²t. On-state characteristics (maximal values) Thermal resistance junction to ambient vs copper surface under tab (DPAK) Relative variation of critical (di/dt)c vs junction temperature OTHER FIGURES 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 α =180° P(W) 180° α α I (A) T(RMS) Fig. 1:Maximum power dissipation versus RMS on-state current. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 0 25 50 75 100 125 Tc(°C) α =180° TO-220AB/DPAK TO-220FPAB I (A) T(RMS) Fig. 2-1: RMS on-state current versus case temperature. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 25 50 75 100 125 α =180° Printed circuit board FR4 Natural convection S=0.5cm² I (A) T(RMS) T (°C) amb Fig. 2-2:RMS on-state current versus ambient temperature. 1.E-02 1.E-01 1.E+00 Zth (j-a) Zth (j-c) DPAK TO-220FPAB DPAK TO-220FPAB t (s) p K=[Zth/Rth] Fig. 3:Relative variation of thermal impedance versus pulse duration. www.kersemi.com

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 I GT I& I LH G THL j G THL j T (°C) j Fig. 4:Relative variation of gate trigger current, holding current and latching versus junction temperature (typical values). 25 50 75 100 125 T (°C) j dV/dt [T ] / dV/dt [T = 125°C] jj V OUT =460V Fig. 5:Relative variation of static dV/dt versus junction temperature. 1 10 100 1000 t=20ms Number of cycles Non repetitive T initial=25°C j Repetitive T =105°C ab I (A) TSM Fig. 8:Surge peak on-state current versus number of cycles. 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 40 45 50 (dI/dt) [(dV/dt) ] / Specified (dI/dt) cc c V OUT =400V (dV/dt) (V/µs) c Fig. 6:Relative variation of critical rate of de- crease of main current versus reapplied dV/dt (typical values). 100 1000 0.01 0.10 1.00 10.00 dI/dt limitation: 50A/µS t (ms) p I TSM I²t I (A), I²t (A²s) TSM T initial=25°C j Fig. 9:Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. 25 50 75 100 125 (dI/dt) [Tj] / (dI/dt) [T = 125°C] cc j T (°C) j V OUT =400V Fig. 7:Relative variation of critical rate of decrease of main current versus junction temperature. www.kersemi.com

S(cm²) Rth (°C/W) (j-a) Fig. 11:Thermal resistance junction to ambient versus copper surface under tab (printed circuit board FR4, copper thickness: 35µm) ACS 1 20 - 7 S X AC Switch Number of switches I 20 = 2.0A T(RMS) V 7 = 700V DRM Gate Sensitivity S= 10mA Package B = DPAK FP = TO-220FPAB T = TO-220AB

ORDERING INFORMATION

0.01 0.10 1.00 10.00 V (V) TM T max. : V =0.85V R =200m j to d Ω T j =25°C T j =125°C I (A) TM Fig. 10: On-state characteristics (maximum values). www.kersemi.com

PACKAGE OUTLINE MECHANICAL DATA DPAK REF. DIMENSIONS Millimeters Inches Min. Max Min. Max. A 2.20 2.40 0.086 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.212 C 0.45 0.60 0.017 0.023 C2 0.48 0.60 0.018 0.023 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.251 0.259 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.397 L2 0.80 typ. 0.031 typ. L4 0.60 1.00 0.023 0.039 V2 0° 8° 0° 8° 6.7 6.7 1.61.6 2.32.3 FOOT PRINT DPAK www.kersemi.com

PACKAGE OUTLINE MECHANICAL DATA TO-220FPAB H G F D E A B Dia REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.70 0.018 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 Typ. 0.63 Typ. L3 28.6 30.6 1.126 1.205 L4 9.8 10.6 0.386 0.417 L5 2.9 3.6 0.114 0.142 L6 15.9 16.4 0.626 0.646 L7 9.00 9.30 0.354 0.366 www.kersemi.com

PACKAGE OUTLINE MECHANICAL DATA TO-220AB A C D Dia F G E M REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 0.107 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.066 F2 1.14 1.70 0.044 0.066 G 4.95 5.15 0.194 0.202 G1 2.40 2.70 0.094 0.106 H2 10 10.40 0.393 0.409 L2 16.4 typ. 0.645 typ. L4 13 14 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.20 6.60 0.244 0.259 L9 3.50 3.93 0.137 0.154 M 2.6 typ. 0.102 typ. Ordering type Marking Package Weight Base qty Delivery mode ACS120-7SB ACS1207S DPAK 0.3 g 75 Tube ACS120-7SB-TR ACS1207S DPAK 0.3 g 2500 Tape & reel ACS120-7SFP ACS1207S TO-220FPAB 2.4 g 50 Tube ACS120-7ST ACS1207S TO-220AB 2.3 g 250 Bulk n Epoxy meets UL94,V0 OTHER INFORMATION www.kersemi.com