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Technical content
Page:P2-P1 Plastic-Encapsulate Transistors
FEATURES
MARKING :CS MAXIMUM RA TINGS (TA=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage V CBO -60 V Collector-Emitter Voltage V CEO -50 V Emitter-Base Voltage V EBO -5 V Collector Current -Continuous IC 0.15 A Collector Power Dissipation PC 0.2 W Junction T emperature TJ 150 Storage T emperature Tstg -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V CBO IC = -5uA,IE=0 -60 V Collector-emitter breakdown voltage V CEO IC = -1mA , I B =0 -50 V Emitter-base breakdown voltage V EBO IE= -50uA, IC =0 -5 V Collector cut-off current ICBO V CB = -60 V , I E=0 -0.1 uA Emitter cut-off current IEBO V EB = -5 V , IC =0 -0.1 uA DC current gain hFE V CE = -6 V, IC = -1mA 120 475 Collector-emitter saturation voltage V CE (sat) I C = -100mA, IB =- 10mA -0.18 -0.3 V Base-emitter voltage V BE(on) V CE =-6V,IC =-1.0mA -0.58 -0.62 -0.68 V Transition frequency fT V CE =-6V,IC =-10mA 50 MHz Collector output capacitance C ob V CB =-10V,IE=0,f=1MH Z 4.5 7 pF Noise figure NF V CE =-6V,IC =-0.3mA, Rg=10kΩ,f=1 00H Z 6 20 dB CLASSIFICATIONOF h FE Rank L H Range 120-220 220-475 (PNP) 1. BASE 2. EMITTER SOT-23 3. COLLECTO A733 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
Page:P2-P2 Plastic-Encapsulate Transistors Typical Characteristics A733 MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/