DTU40N06_13 DINTEK | Alldatasheet
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/C0068TrenchFET/C0114 Power MOSFET /C0068175/C0095C Maximum Junction Temperature /C0068100% R g Tested N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (/C0087) I D (A) 0.016 @ V GS = 10 V D G S N-Channel MOSFET TO-252 S GD Top View ABSOLUTE MAXIMUM RATINGS (T A = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS /C003420 V Continuous Drain Current (T J = 175 /C0095 b T C = 25/C0095C I D Continuous Drain Current (T J = 175/C0095C) b T C = 125/C0095C I D Pulsed Drain Current I DM A Continuous Source Current (Diode Conduction) I S Avalanche Current I AR Repetitive Avalanche Energy (Duty Cycle /C0118 1%) L = 0.1 mH E AR mJ Maximum Power Dissipation T C = 25/C0095C P 136 b W Maximum Power Dissipation T A = 25/C0095C P D a W Operating Junction and Storage Temperature Range T J , T stg −55 to 175 /C0095C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Jt i t A b i t a t /C0118 10 sec R Junction-to-Ambient a Steady State R thJA /C0095C/W Junction-to-Case R thJC 0.85 1.1 C/W Notes a. Surface Mounted on 1” x1” FR4 Board. b. See SOA curve for voltage derating. www.din-tek.jp DTU40N06
SPECIFICATIONS (T J = 25/C0095C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ a Max Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = 0 V, I D = 250 /C0109A V Gate Threshold Voltage V GS(th) V DS = V GS , I D = 250 /C0109A 2.0 4.0 V Gate-Body Leakage I GSS V DS = 0 V, V GS = /C003420 V /C0034100 nA V DS = 60 V, V GS = 0 V Zero Gate Voltage Drain Current I DSS V DS = 60 V, V GS = 0 V, T J = 125/C0095C /C0109A g DSS V DS = 60 V, V GS = 0 V, T J = 175/C0095C 250 /C0109 On-State Drain Current b I D(on) V DS = 5 V, V GS = 10 V A V GS = 10 V, I D = 40 A 0.013 0.016 Drain-Source On-State Resistance b r DS(on) V GS = 10 V, I D = 40 A, T J = 125/C0095C 0.027 /C0087 DS(on) V GS = 10 V, I D = 40 A, T J = 175/C0095C 0.037 Forward Transconductance b g fs V DS = 15 V, I D = 40 A S Dynamic a Input Capacitance C iss 1960 Output Capacitance C oss V GS = 0 V, V DS = 25 V, F = 1 MHz 370 pF Reverse Transfer Capacitance C rss 200 Total Gate Charge c Q g Gate-Source Charge c Q gs V DS = 40 V, V GS = 10 V, I D = 40 A nC Gate-Drain Charge c Q gd DS GS D Gate Resistance R g 0.5 2.7 /C0087 Turn-On Delay Time c t d(on) Rise Time c t r V DD = 40 V, R L = 1.0 /C0087 ns Turn-Off Delay Time c t d(off) V DD = 40 V R L = 1 0 /C0087 I D /C0094 40 A, V GEN = 10 V, R g = 2.5 /C0087 ns Fall Time c t f Source-Drain Diode Ratings and Characteristic (T C = 25/C0095C) Pulsed Current I SM A Diode Forward Voltage b V SD I F = 40 A, V GS = 0 V 1.0 1.5 V Source-Drain Reverse Recovery Time t rr I F = 40 A, di/dt = 100 A//C0109s ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width /C0118 300 /C0109s, duty cycle /C0118 2%. c. Independent of operating temperature. www.din-tek.jp DTU40N06
TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0 204 06 08 0 1 0 0 500 1000 1500 2000 2500 3000 0 2 04 06 08 0 Output Characteristics Transfer Characteristics Capacitance Gate Charge Transconductance On-Resistance vs. Drain Current V DS − Drain-to-Source Voltage (V) − Drain Current (A)I D V GS − Gate-to-Source Voltage (V) − Drain Current (A)I D− Gate-to-Source Voltage (V) − On-Resistance ( Q g − Total Gate Charge (nC) I D − Drain Current (A) V DS − Drain-to-Source Voltage (V) C − Capacitance (pF) rDS(on) /C0087)V GS − Transconductance (S)g fs 100 02468 10 0 1 53 04 56 07 5 0.00 0.01 0.02 0.03 0.04 0 204 06 08 0 1 0 0 100 01234 567 −55/C0095C T C = 125/C0095C V DS = 10 V I D = 40 A V GS = 10 thru 7 V 5 V V GS = 10 V T C = −55/C0095C 25/C0095C 125/C0095C C oss C iss I D − Drain Current (A) 6 V 25/C0095C C rss 3, 4 V www.din-tek.jp DTU40N06
TYPICAL CHARACTERISTICS (25/C0095C UNLESS NOTED) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 −50 −25 0 25 50 75 100 125 150 175 On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage T J − Junction Temperature (/C0095C) V SD − Source-to-Drain Voltage (V) − Source Current (A)I S 100 0.01 0.3 0.6 0.9 1.2 V GS = 10 V I D = 40 A 0.1 T J = 25/C0095C T J = 150/C0095C r DS(on) − On-Resiistance (Normalized) THERMAL RATINGS Safe Operating Area V DS − Drain-to-Source Voltage (V) − Drain Current (A)I D 0.1 0.1 1 10 100 Limited by r DS(on) 1000 Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (sec) 0.1 0.01 11 0 Normalized Effective Transient Thermal Impedance Maximum Avalanche Drain Current vs. Case Temperature T C − Case Temperature (/C0095C) − Drain Current (A)I D 0 25 50 75 100 125 150 175 0.2 0.1 Duty Cycle = 0.5 10 ms 100 ms 1 s, dc 100 /C0109s 10 /C0109s 1 ms 0.05 0.02 Single Pulse 100 T C = 25/C0095C Single Pulse www.din-tek.jp DTU40N06
- Dim en sion L3 is for reference only. L3D b b2 C gage plane height (0.5 mm) e E A L H MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 - E 6.35 6.73 0.250 0.265 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347
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OMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.420 (10.668) Recommended Minimum Pads Dimensions in Inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) Application Note www.din-tek.jp
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