35N06 EVVOSEMI | Alldatasheet

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Features

VDS = 60V,ID =35A RDS(ON),23 mΩ(Typ) @ VGS =10V RDS(ON),30 mΩ(Typ) @ VGS =4.5V Fast Switching Low ON Resistance(Rdson≤29mΩ) Low Gate Charge Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switch circuit of adaptor and charger; LED backlight driver; Synchronousrectification PackageMarkingandOrderingInformation DeviceMarking Device DevicePackage ReelSize Tapewidth Quantity 35N06 TO-252 330mm 12mm 2500 AbsoluteMaximum Ratings(TA=25℃ unlessotherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 60 V Gate-SourceVoltage VGS ±20 V ContinuousDrainCurrent TC=25℃ ID 35 A TC=100℃ 24.5 A PulsedDrainCurrent 1) IDM 100 A SinglePuiseAvalancheEnergy 2) EAS 56.2 mJ MaximumPower Dissipation TC=25℃ PD 36.2 W StorageTemperatureRange TSTG -55to +150 ℃ OperatingJunctionTemperatureRange TJ -55to +150 ℃ Thermal Resistance Parameter Symbol Min. Typ. Max Unit Thermal Resistance,Junction-to-Case RθJC - - 3.45 ℃/W Thermal Resistance,Junction toAmbient RθJA - - 111.5 ℃/W 35N06 Rev:2023A2 1 35N06

Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1 1.5 2 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=19A - 23 29 mΩ VGS=4.5V,IDS=19A - 30 38 mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Input Capacitance CiSS VDS =30V,VGS = 0V, f=1MHz - 939 - pFOutput Capacitance COSS - 73.5 - Reverse Transfer Capacitance Crss - 52.7 - Gate Resisitance Rg VDD=0V,VGS=0V, F=1MHz - 1.9 - Ω SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-On Delay Time Td(on) VGS=10V,VDs=30V, RGEN=3Ω ID=20A - 8.4 - ns RiseTime tr - 8.5 - Turn-OffDelayTime Td(off) - 35.4 - Fall Time tf - 4.8 - Total Gate Charge Qg VDS=30V,IDS=20A, VGS=10V - 21.2 - nCGate to Source Gate Charge Qgs - 3.6 - Gate to Drain“Miller”Charge Qgd - 5.5 - DRAIN-SOURCE DIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Diode Forward Voltage VSD VGS=0V,IDS=20A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=20A di/dt=100A/us - 18.8 - nS Reverse Recovery Charge Qrr - 13.4 - nC Notes: 1) Repetitive rating; pulse width limited by maximum junction temperature . 2) L=0.5mH,VDD=30V,Ias=15AStartTJ=25℃ 3) Recommend soldering temperature defined by IPC/JEDEC J-STD 020 Rev:2023A2 2 60V N-Channel Power Mosfet 35N06

Rev:2023A2 3 60V N-Channel Power Mosfet 35N06

Rev:2023A2 4 60V N-Channel Power Mosfet 35N06

Rev:2023A2 5 60V N-Channel Power Mosfet 35N06

Rev:2023A2 6 60V N-Channel Power Mosfet 35N06

Rev:2023A2 7 60V N-Channel Power Mosfet 35N06

Rev:2023A2 8 60V N-Channel Power Mosfet 35N06