30N06 EVVOSEMI | Alldatasheet

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VDS = 60V,ID =30A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load Switch Power management Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-SourceVoltage VDS 60 V Gate-SourceVoltage VGS ±20 V Drain Current-ContinuousNote3 TC=25℃ ID 30 A TC=100℃ 20 A DrainCurrent-PulsedNote1 IDM 120 A AvalancheEnergyNote4 EAS 72 mJ MaximumPowerDissipation TC=25℃ PD 55 W StorageTemperatureRange TSTG -55to+150 ℃ OperatingJunctionTemperatureRange TJ -55to+150 ℃ ThermalResistance Parameter Symbol Min. Typ. Max Unit ThermalResistance,Junction-to-Case RθJC - - 2.7 ℃/W 1Rev:2023A2 60VN-ChannelEnhancementModePowerMOSFET 30N06

Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.6 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=15A - 23 29 mΩ VGS=4.5V,IDS=10A - 29 40 mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Input Capacitance CiSS VDS =25V,VGS = 0V, f=1MHz - 1562 - pFOutput Capacitance COSS - 75.4 - Reverse Transfer Capacitance Crss - 66.8 - SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-On Delay Time Td(on) VGS=10V,VDs=30V, RGEN=1.8Ω ID=15A - 7.5 - ns RiseTime tr - 21 - Turn-OffDelayTime Td(off) - 16 - Fall Time tf - 23.5 - Total Gate Charge at 10V Qg VDS=30V,IDS=15A, VGS=10V - 25 - nCGate to Source Gate Charge Qgs - 4.5 - Gate to Drain“Miller”Charge Qgd - 6.5 - DRAIN-SOURCE DIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Diode Forward Voltage VSD VGS=0V,IDS=15A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=15A di/dt=100A/us - 29 - nS Reverse Recovery Charge Qrr - 45 - nC Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤2%. 4: EAS condition: L=0.5mH,VDD=30V,VG=10V,VGATE=60V,StartTJ=25℃. Rev:2023A2 2 60VN-ChannelEnhancementModePowerMOSFET 30N06

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Rev:2023A2 7 60VN-ChannelEnhancementModePowerMOSFET 30N06 Marking Orderinginformation Order code Package Baseqty Deliverymode 30N06 TO-252 2500 Tape and reel