30N03A EVVOSEMI | Alldatasheet
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Features
VDS = 30V,ID =90A RDS(ON),3.9 mΩ(Typ) @ VGS =10V RDS(ON), 6.5mΩ(Typ) @ VGS =4.5V Low on resistance Low gate charge Fast switching Low reverse transfer capacitances Application DC-DC converters Synchronous Rectifier Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width QuantitY 30N03A TO-252 330mm 12mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Drain Current-ContinuousNote3 TC=25℃ ID 90 A TC=100℃ 63 A DrainCurrent-PulsedNote1 IDM 200 A AvalancheEnergyNote4 EAS 280 mJ AvalancheCurrent IAS 33 A MaximumPower Dissipation TC=25℃ PD 105 W StorageTemperatureRange TSTG -55to +150 ℃ OperatingJunctionTemperatureRange TJ -55to +150 ℃ Thermal Resistance Parameter Symbol Min. Typ. Max Unit Thermal Resistance,Junction-to-Case RθJC - 3.3 - ℃/W 30N03A 30N03A 1Rev:2023A2 30N03A
Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 30 - - V Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.7 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=30A - 3.9 5.0 mΩ VGS=4.5V,IDS=20A - 6.5 8.0 DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Input Capacitance CiSS VDS =15V,VGS = 0V, f=1MHz - 1963 - pFOutput Capacitance COSS - 248 - Reverse Transfer Capacitance Crss - 221 - Gate Resisitance Rg VDD=0V,VGS=1V, F=1MHz - 1.43 - Ω SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-On Delay Time Td(on) VGS=10V,VDs=15V, RGEN=3Ω ID=20A - 55 - ns RiseTime tr - 36.4 - Turn-OffDelayTime Td(off) - 37.5 - Fall Time tf - 14 - Total Gate Charge at 10V Qg VDS=15V,IDS=45A, VGS=10V - 41 - nCGate to Source Gate Charge Qgs - 6.4 - Gate to Drain“Miller”Charge Qgd - 11 - DRAIN-SOURCE DIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Diode Forward Voltage VSD VGS=0V,IDS=20A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=20A di/dt=100A/us - 21.7 - nS Reverse Recovery Charge Qrr - 7.2 - nC Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤2%. 4: EAS condition: L=0.5mH,VDD=15V,VG=10V,VGATE=30V,StartTJ=25℃. 30N03A Rev:2023A2 2
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