20N06 EVVOSEMI | Alldatasheet

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VDS = 60V,ID =20A RDS(ON),23mΩ(Typ) @ VGS =10V RDS(ON),29mΩ(Typ) @ VGS =4.5V Advanced Trench Technology Excellent RDS(ON) and Low Gate Charge Lead free product is acquired Application Load Switch Power management Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 20N06 TO-252 330mm 12mm 2500 Absolute Maximum Ratings(TA=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Drain Current-ContinuousNote3 TC=25℃ ID A20 TC=100℃ 14 A Drain Current-PulsedNote1 IDM 120 A Avalanche EnergyNote4 EAS 72 mJ Maximum Power Dissipation TC=25℃ PD 55 W Storage Temperature Range TSTG -55 to +150 ℃ Operating Junction Temperature Range TJ -55 to +150 ℃ Thermal Resistance Parameter Symbol Min. Typ. Max Unit Thermal Resistance,Junction-to-Case RθJC - - 2.7 ℃/W 20N06 1Rev:2023A2 20N06 20N06

Electrical Characteristics(TJ=25℃ unless otherwise noted) OFF CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Breakdown Voltage BVDSS VGS=0V,IDS=250uA 60 - - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 uA Gate-Body Leakage IGSS VGS=±20V,VDS=0V - - ±100 nA ON CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Gate Threshold Voltage VGS(TH) VDS=VGS,IDS=250uA 1.0 1.6 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V,IDS=15A - 23 29 mΩ VGS=4.5V,IDS=10A - 29 40 mΩ DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Input Capacitance CiSS VDS =25V,VGS = 0V, f=1MHz - 1562 - pFOutput Capacitance COSS - 75.4 - Reverse Transfer Capacitance Crss - 66.8 - SWITCHING CHARACTERISTICS Parameter Symbol Conditions Min. Typ. Max. Unit Turn-On Delay Time Td(on) VGS=10V,VDs=30V, RGEN=1.8Ω ID=15A - 7.5 - ns RiseTime tr - 21 - Turn-OffDelayTime Td(off) - 16 - Fall Time tf - 23.5 - Total Gate Charge at 10V Qg VDS=30V,IDS=15A, VGS=10V - 25 - nCGate to Source Gate Charge Qgs - 4.5 - Gate to Drain“Miller”Charge Qgd - 6.5 - DRAIN-SOURCE DIODE CHARACTERISTICSAND MAXIMUM RATINGS Parameter Symbol Conditions Min. Typ. Max. Unit Drain-Source Diode Forward Voltage VSD VGS=0V,IDS=15A - - 1.2 V Reverse RecoveryTime trr TJ=25℃,IF=15A di/dt=100A/us - 29 - nS Reverse Recovery Charge Qrr - 45 - nC Notes: 1: Repetitive rating, pulse width limited by maximum junction temperature. 2: Surface mounted on FR4 Board, t≤10sec. 3: Pulse width ≤ 300μs, duty cycle ≤2%. 4: EAS condition: L=0.5mH,VDD=30V,VG=10V,VGATE=60V,StartTJ=25℃. Rev:2023A2 2 60VN-ChannelEnhancementModePowerMOSFET 20N06 20N06

Rev:2023A2 3 60VN-ChannelEnhancementModePowerMOSFET 20N06

Rev:2023A2 4 60VN-ChannelEnhancementModePowerMOSFET 20N06

Rev:2023A2 5 60VN-ChannelEnhancementModePowerMOSFET 20N06

Rev:2023A2 6 60VN-ChannelEnhancementModePowerMOSFET 20N06