12N10

12N10 EVVOSEMI | Alldatasheet

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N-Channel 100 V (D-S) MOSFET

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 Primary Side Switch PRODUCT SUMMARY VDS (V) RDS(on) ()I D (A) 100 0. at VGS 10 V N-Channel MOSFET G D S Notes: a. Surface mounted on 1" x 1" FR4 board. b. See SOA curve for voltage derating. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C ID A TC = 125 °C 13 Pulsed Drain Current IDM 40 Continuous Source Current (Diode Conduction) IS 3 Avalanche Current IAS 3 Single Pulse Avalanche Energy L = 0.1 mH EAS 18 mJ Maximum Power Dissipation TC = 25 °C PD 96b WTA = 25 °C 3a Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambienta t  10 s RthJA 15 18 °C/WSteady State 40 50 Junction-to-Case (Drain) RthJC 0.85 1.1 151 12N10 Rev:2023A2 1

Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. c. Independent of operating temperature. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ.a Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 100 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 100 V, VGS = 0 V 1 µAVDS = 100 V, VGS = 0 V, TJ = 125 °C 50 VDS = 100 V, VGS = 0 V, TJ = 175 °C 250 On-State Drain Currentb ID(on) VDS 5 V, VGS = 10 V 40 A Drain-Source On-State Resistanceb RDS(on) VGS = 10 V, ID = 3 A VGS = 10 V, ID = 3 A, TJ 125 °C VGS = 10 V, ID = 3 A, TJ 175 °C VGS = 4.5 V ID = 3 A Forward Transconductanceb gfs VDS = 15 V, ID = 3 A 35 S Dynamica Input Capacitance Ciss VGS = 0 V, VDS = 25 V, F = 1 MHz 950 pFOutput Capacitance Coss 120 Reverse Transfer Capacitance Crss 60 Total Gate Chargec Qg VDS = 50 V, VGS = 10 V, ID = 3 A 24 41 nCGate-Source Chargec Qgs Gate-Drain Chargec Qgd 12 Gate Resistance Rg 0.5 2.9  Tur n-On Delay Timec td(on) VDD = 50 V, RL = 5.2 Ω ID ≅ 3 A, VGEN = 10 V, Rg = 2.5 Ω 15 25 nsRise Timec tr 50 75 Turn-Off Delay Timec td(off) 30 45 Fall Timec tf 60 90 Source-Drain Diode Ratings and Characteristics (TC = 25 °C) Pulsed Current ISM 5 A Diode Forward Voltageb VSD IF = 3 A, VGS = 0 V 0.9 1.5 V Source-Drain Reverse Recovery Time trr IF 3 A, dI/dt = 100 A/µs 180 250 ns 1.0 2.5 N-Channel 100 V (D-S) MOSFET 12N10 Rev:2023A2 2 114 120 140 120 mΩ

TYPICAL CHARACTERI STICS (25 °C, unless otherwise noted) Output Characteristics Transconductance Capacitance VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 02468 1 0 4 V VGS = 10 V thru 5 V 2 V 3 V 0 1 02 03 04 0 - Transconductance (S)g fs TC = - 55 °C 25 °C 125 °C ID - Drain Current (A) 300 600 900 1200 1500 0 20 40 60 80 100 VDS - Drain-to-Source Voltage (V) C - Capacitance (pF) Coss Ciss Crss Transfer Characteristics On-Resistance vs. Drain Current Gate Charge VGS - Gate-to-Source Voltage (V) - D r a i n Current (A)I D 0123456 -5 5 ° C TC = 125 °C 25 °C - On-Resistance () ID - Drain Current (A) RDS(on) 0.0 0.1 0.2 0.3 0 1 02 03 04 0 VGS = 10 V V GS = 5 V - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 0 1 02 03 04 05 06 0 VDS = 100 V ID = 19 A N-Channel 100 V (D-S) MOSFET 12N10 Rev:2023A2 3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) On-Resistance vs. Junction Temperature 0.0 0.05 0.1 0.15 0.2 0.25 0.3 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature ( )°C VGS = 10 V ID = 5 A RDS(on) - On-Resistance (Normalized) Source-Drain Diode Forward Voltage VSD - Source-to-Drain Voltage (V) - S ource Current (A)I S 100 0.3 0.6 0.9 1.2 TJ = 25 °C TJ = 150 °C Maximum Avalanche Drain Current vs. Case Temperature TC - Case Temperature (°C) - Drain Current (A)I D 0 25 50 75 100 125 150 175 Safe Operating Area 0.1 00 0 1 0 1 1 1 . Limited by RDS(on)* T C = 25 °C Single Pulse 10 ms 100 ms 1 s, DC 100 µs 10 µs 100 1 ms VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified ID - Drain Current (A) Normalized Thermal Transient Impedance, Junction-to-Case Square Wave Pulse Duration (s) 0.1 0.01 10-4 10-3 10-2 1010-1 1 Normalized Effective Transient Thermal Impedance 0.2 0.1 Duty Cycle = 0.5 0.05 0.02 Single Pulse N-Channel 100 V (D-S) MOSFET 12N10 Rev:2023A2 4

Ordering information

Ordercode Package Baseqty Deliverymode

2500 Tape and reel

Millimeters InchesRef. A B C D E G H L 2.10 0.66 0.40 2.50 0.10 0.86 0.60 0.083 0.026 0.016 0.098 0.004 0.034 0.024 6.40 9.50 10.70 0.374 0.421 0.053 0.065 5.90 6.30 0° 6° 0.232 0.248 6.80 0.252 0.268 4.47 4.67 0.176 0.184 1.09 1.21 0.043 0.048 1.35 1.65 0° 6° B2 5.18 5.48 0.202 0.216 C2 0.44 0.58 0.017 0.023 5.30REF 4.63 0.182 0.209REF E H B G L DETAIL A DETAIL A A C D Package Mechanical Data TO-252 N-Channel 100 V (D-S) MOSFET 12N10 Rev:2023A2 5 12N10