1136447

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Technical content

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 1 of 14 www.qorvo.com Product Overview Qorvo’s QPA 2628D is a high -performance, low noise amplifier fabricated on Qorvo’s production 90nm pHEMT (QPHT09) process. Covering 25 –31 GHz, the QPA2628D provides 22 dB small signal gain and P1dB of 19 dBm, while supporting a noise figure of 1.7 dB and IM3 levels of −53 dBc (at Pout=0 dBm/tone). The QPA2628D is in die form, 2.40 x 1.00 x 0.10 mm, with both RF ports matched to 50 ohms and with integrated DC blocking caps on both I/O ports for simple system integration. The QPA 2628D’s high performance and low power consumption make it ideal for satellite and military or commercial radar applications.

Ordering Information

Part No. Description QPA2628D 25 – 31 GHz GaAs Low Noise Amplifier

1136447 QPA2628D Evaluation Board

• Frequency Range: 25–31 GHz
• Noise Figure: 1.7 dB (typical)
• Small Signal Gain: 22 dB (typical)
• P1dB: 19 dBm (typical)
• IM3: −53 dBc (Pout=0 dBm/tone) (typical)
• Bias: VD = 3.5 V, IDQ = 90 mA, VG = −0.46 V (typical)
• Die Dimensions: 2.40 x 1.00 x 0.10 mm

Applications

• Satellite Communications
• Military and Commercial Radar Applications

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 2 of 14 www.qorvo.com Absolute Maximum Ratings Parameter Rating Units Drain Voltage (VD) 4.5 V Drain Current (ID1/ID2/ID3) 45/45/160 mA Gate Voltage Range (VG) −1.3 to 0 V Gate Current (IG1/IG2/IG3 at 125 °C) 5.0/5.0/6.6 mA RF Input Power (50 Ω, 85 °C) 20 dBm Channel Temperature, TCH 175 °C Mounting Temperature (30 seconds) 260 °C Storage Temperature −55 to 150 °C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Electrical Specifications Test conditions unless otherwise noted: VD = +3.5V, IDQ = 90 mA, Temp. = +25 °C. Data de-embedded to MMIC bond wires. Parameter Min Typ Max Units Operating Frequency 25 31 GHz Small Signal Gain 22 dB Noise Figure 1.7 dB 1-dB Compression Point 19 dBm Input Return Loss 8 dB Output Return Loss 14 dB 3RD Order Intermodulation Level (POUT = 0 dBm / Tone) −53 dBc Output TOI (Pout = 0 dBm / tone) 27 dBm Gain (S21) Temperature Coefficient −0.013 dB/°C Recommended Operating Conditions Parameter Value Units Drain Voltage 3.5 V Drain Current (quiescent, IDQ) 90 mA Drain Current (ID, Low noise / PSAT) 90 / 200 mA Gate Voltage (typical) −0.46 V Operating Temperature Range −40 to 85 °C Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions.

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 3 of 14 www.qorvo.com Performance Plots – Small Signal Test conditions unless otherwise noted: VD = +3.5V, IDQ = 90 mA, Temp. = +25 °C -30 -25 -20 -15 -10 24 26 28 30 32 S11 (dB) Freq (GHz) Input Return Loss vs Temperature - 40 C + 25 C + 85 C 24 26 28 30 32 Gain (dB) Freq (GHz) Gain vs Temperature - 40 C + 25 C + 85 C -80 -70 -60 -50 -40 -30 24 26 28 30 32 S12 (dB) Freq (GHz) Reverse Isolation vs Temperature - 40 C + 25 C + 85 C -30 -25 -20 -15 -10 24 26 28 30 32 S22 (dB) Freq (GHz) Output Return Loss vs Temperature - 40 C + 25 C + 85 C

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 4 of 14 www.qorvo.com Performance Plots – Small Signal Test conditions unless otherwise noted: VD = +3.5V, IDQ = 90 mA, Temp. = +25 °C 24 25 26 27 28 29 30 31 32 Gain (dB) Freq (GHz) Gain vs Voltage 2.0 V 3.0 V 3.5 V 4.0 V 24 26 28 30 32 Gain (dB) Freq (GHz) Gain vs Current 30 mA 50 mA 70 mA 90 mA 110 mA 130 mA -30 -25 -20 -15 -10 24 26 28 30 32 S11 (dB) Freq (GHz) Input Return Loss vs Voltage 2.0 V 3.0 V 3.5 V 4.0 V -30 -25 -20 -15 -10 24 26 28 30 32 S11 (dB) Freq (GHz) Input Return Loss vs Current 30 mA 50 mA 70 mA 90 mA 110 mA 130 mA -30 -25 -20 -15 -10 24 26 28 30 32 S22 (dB) Freq (GHz) Output Return Loss vs Voltage 2.0 V 3.0 V 3.5 V 4.0 V -30 -25 -20 -15 -10 24 26 28 30 32 S22 (dB) Freq (GHz) Output Return Loss vs Current 30 mA 50 mA 70 mA 90 mA 110 mA 130 mA

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 5 of 14 www.qorvo.com Performance Plots – Noise Figure Test conditions unless otherwise noted: VD = +3.5V, IDQ = 90 mA, Temp. = +25 °C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 24 26 28 30 32 Noise Figure (dB) Freq (GHz) NF vs Temperature - 40 C + 25 C + 85 C 0.0 0.5 1.0 1.5 2.0 2.5 3.0 24 26 28 30 32 Noise Figure (dB) Freq (GHz) NF vs Voltage 2.0 V 3.0 V 3.5 V 4.0 V 0.0 0.5 1.0 1.5 2.0 2.5 3.0 24 26 28 30 32 Noise Figure (dB) Freq (GHz) NF vs Current 30 mA 50 mA 70 mA 90 mA 110 mA 130 mA

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 6 of 14 www.qorvo.com Performance Plots – Large Signal Test conditions unless otherwise noted: VD = +3.5V, IDQ = 90 mA, Temp. = +25 °C 24 25 26 27 28 29 30 31 32 Output Power (dBm) Frequency (GHz) P1dB vs. Freq. vs. Temp. -40 C +25 C +85 C 24 25 26 27 28 29 30 31 32 Output Power (dBm) Frequency (GHz) Psat vs. Freq. vs. Temp. -40 C +25 C +85 C 24 25 26 27 28 29 30 31 32 PAE at Psat (%) PAE at P1dB (%) Frequency (GHz) PAE vs. Freq. vs. Temp. −40 C P1dB +25 C P1dB +85 C P1dB −40 C Psat +25 C Psat +85 C Psat -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. Freq.

25 GHz 28 GHz 31 GHz

-20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Power Gain (dB) Input Power (dBm) Power Gain vs. Input Power vs. Freq. -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 Drain Current (mA) Input Power (dBm) Drain Current vs. Input Power vs. Freq.

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 7 of 14 www.qorvo.com Performance Plots – Linearity Test conditions unless otherwise noted: VD = +3.5V, IDQ = 90 mA, 25 °C -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM3 (dBc) Frequency (GHz) IM3 vs. Frequency vs. Temperature -40 C +25 C +85 C Df =10 MHz, Pout/Tone = 0 dBm -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM3 (dBc) Frequency (GHz) IM3 vs. Frequency vs. VD 3.0 V 3.5 V 4.0 V IDQ = 90 mA, Df =10 MHz, Pout/Tone = 0 dBm -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM3 (dBc) Frequency (GHz) IM3 vs. Frequency vs. Temperature -40 C +25 C +85 C Df =10 MHz, Pout/Tone = 5 dBm -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM3 (dBc) Frequency (GHz) IM3 vs. Frequency vs. IDQ 70 mA 90 mA 110 mA VD = 3.5 V, Df =10 MHz, Pout/Tone = 0 dBm -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM3 (dBc) Frequency (GHz) IM3 vs. Frequency vs. Temperature -40 C +25 C +85 C Df =10 MHz, Pout/Tone = 10 dBm 24 25 26 27 28 29 30 31 32 OTOI (dBm) Frequency (GHz) OTOI vs. Frequency vs. Temperature -40 C +25 C +85 C Df =10 MHz, Pout/Tone = 0 dBm

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 8 of 14 www.qorvo.com Performance Plots – Linearity Test conditions unless otherwise noted: VD = +3.5V, IDQ = 90 mA, 25 °C -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM5 (dBc) Frequency (GHz) IM5 vs. Frequency vs. Temperature -40 C +25 C +85 C Df =10 MHz, Pout/Tone = 0 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 22 23 24 25 26 27 28 29 30 31 32 IM5 (dBc) Frequency (GHz) IM5 vs. Frequency vs. VD 3.0 V 3.5 V 4.0 V IDQ = 90 mA, Df =10 MHz, Pout/Tone = 0 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM5 (dBc) Frequency (GHz) IM5 vs. Frequency vs. Temperature -40 C +25 C +85 C Df =10 MHz, Pout/Tone = 5 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 22 23 24 25 26 27 28 29 30 31 32 IM5 (dBc) Frequency (GHz) IM5 vs. Frequency vs. IDQ 70 mA 90 mA 110 mA VD = 3.5 V, Df =10 MHz, Pout/Tone = 0 dBm -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 24 25 26 27 28 29 30 31 32 IM5 (dBc) Frequency (GHz) IM5 vs. Frequency vs. Temperature -40 C +25 C +85 C Df =10 MHz, Pout/Tone = 10 dBm

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 9 of 14 www.qorvo.com Mechanical Drawing and Bond Pad Descriptions Dimensions in mm Pad No. Label Pas Sizes (um) Description

1 RF Input 91 x 197 Matched to 50 ohms, DC blocked

2 VG1 82 x 82 Gate Voltage; bias network is required (VG can be tied together at PCB)

3 VG2 82 x 82 Gate Voltage; bias network is required (VG can be tied together at PCB)

4 VG3 82 x 82 Gate Voltage; bias network is required (VG can be tied together at PCB)

5 RF Output 91 x 197 Matched to 50 ohms, DC blocked

6 VD3 82 x 82 Drain Voltage; bias network is required (VD can be tied together at PCB)

7 VD2 82 x 82 Drain Voltage; bias network is required (VD can be tied together at PCB)

8 VD1 82 x 82 Drain Voltage; bias network is required (VD can be tied together at PCB)

1.000 0.905 0.500 0.095 0.000 0.000 0.100 0.557 1.120 1.833 2.300 2.400 0.436 1.186 1.998 1 5 2 3 4 8 7 6

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 10 of 14 www.qorvo.com Assembly Notes Component placement and adhesive attachment assembly notes:

• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment (i.e., conductive epoxy) can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern. Reflow process assembly notes:
• Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• Do not use any kind of flux.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere. Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Devices with small pad sizes should be bonded with 0.0007-inch wire.

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 11 of 14 www.qorvo.com Evaluation Board and BOM connector interface is optimized for the Southwest Microwave end launch connector 1 492-04A-5. PCB level tuning at input side is recommended for optimal performance. All data de-embedded to the MMIC bondwires (shown). Note: Multiple vias should be employed under die to minimize inductance and thermal resistance. Bill of Material – Evaluation Board Ref. Des. Value Description Manuf. Part Number C3, C12 0.01 uF CAP 0.01uF +/-10% 50V 0402 X7R ROHS Various C6, C15 1.0 uF CAP 1.0uF +/-10% 16V 0603 X7R ROHS Various C9, C18 10 uF CAP CER 10uF 10V X7R 10% 0805 TDK ROHS Various RF IN, RF OUT 2.4 mm 2.4 MM END LAUNCH CONNECTOR Southwest Microwave 1492-04A-5

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 12 of 14 www.qorvo.com Application Circuit Notes: 1. Can use separate gate and drain for individual stage controls. Bias-up Procedure Bias-down Procedure 1. Set ID limit to 220 mA, IG limit to 10 mA 1. Turn off RF signal 3. Set VD +3.5 V 3. Set VD to 0V 4. Adjust VG more positive until IDQ = 90mA (VG  −0.46 V Typical) 4. Turn off VD supply 5. Apply RF signal 5. Turn off VG supply

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 13 of 14 www.qorvo.com Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC) (1) Tbase = 85°C, VD = 3.5 V, IDQ = 90 mA Quiescent/Small Signal operation, PDISS = 0.315 W 65.1 ºC/W Channel Temperature, TCH (Under RF) 105.5 °C Median Lifetime (TM) 1.236E08 Hrs Notes: 1. Die mounted to 40 mil CuMo carrier plate with AuSn eutectic. Thermal resistance measured at back of carrier plate. Median Lifetime Test Conditions: VD = +4 V Failure Criteria is 10% reduction in ID_MAX

25 – 31 GHz GaAs Low Noise Amplifier Data Sheet Rev. B, August 2020 | Subject to change without notice 14 of 14 www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) 1A ESDA / JEDEC JS-001-2012 RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Sub stances in Electr ical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Tel: 1-844-890-8163 Web: www.qorvo.com Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for t he use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TR ADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2020 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc.