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QPD1009 QORVO | Alldatasheet

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Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
PDF pages: 28

Technical content

Frequency: DC to 4 GHz
Output Power (P3dB): 17 W at 2 GHz
Linear Gain: 24 dB at 2 GHz
Typical PAE3dB: 72% at 2 GHz
Operating Voltage: 50 V
Low thermal resistance package
CW and Pulse capable
3 x 3 mm package 3 x 3 x 0.100 mm General Description Qorvo’s QPD1009 is a 15 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 50V supply rail . The device is an industry standard 3x3 mm plastic overmold package and is ideally suited to military and civilian radar, land mobile and military radio communications, wireless infrastructure communications, avionics, and test instrumentation. The device can support pulsed, CW and linear operations. Lead-free and ROHS compliant. Evaluation boards are available upon request. Functional Block Diagram

Applications

Military radar
Civilian radar
Land mobile and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers Ordering info Part No. Description QPD1009 DC – 4 GHz RF Transistor 1132871 0.96 – 1.215 GHz EVB QPD1009EVB02 1.1 – 1.7 GHz EVB 5 6 7 8 16 15 14 13 VG, RF IN VD, RF OUT VD, RF OUT N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C N/C VG, RF IN

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 2 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Absolute Maximum Ratings1 Parameter Rating Units Breakdown Voltage,BVDG +145 V Gate Voltage Range, VG -7 to +2 V Drain Current, IDSS 1600 mA Gate Current Range, IG See page 4. mA Power Dissipation, CW, PDISS 16 W RF Input Power at 2 GHz, CW, 50 Ω, T = 25 °C +27 dBm Mounting Temperature (30 Seconds) 320 °C Storage Temperature −40 to +150 °C Notes: 1. . Operation of this device outside the parameter ranges given above may cause permanent damage. Recommended Operating Conditions1 Parameter Min Typ Max Units Operating Temp. Range −40 +25 +85 °C Drain Voltage Range, VD +12 +50 +60 V Drain Bias Current, IDQ – 26 – mA Drain Current, ID – 700 – mA Gate Voltage, VG – −2.8 – V Power Dissipation, CW (PD)2 – – 14.4 W Power Dissipation, Pulsed (PD)2, 3 – – 17.5 W Notes: 1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not guaranteed over all recommended operating conditions. 2. Package at 85 °C 3. Pulse Width = 128 uS, Duty Cycle = 10%

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 3 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Pulsed Characterization – Load Pull Performance – Efficiency Tuned Parameters Typical Values Unit Frequency 1 2 3 3.5 4 GHz Output Power at 3dB compression point, P3dB 40 41.9 40.9 40.7 41.2 dBm Power-Added-Efficiency at 3dB Gain at 3dB compression point, Notes: 1. Test conditions unless otherwise noted: VD = +50 V, IDQ = 26 mA, Temp = +25 °C Pulsed Characterization – Load Pull Performance – Power Tuned Parameters Typical Values Unit Frequency, F 1 2 3 3.5 4 GHz Linear Gain, GLIN 27 23.7 20.9 19.7 18.7 dB Output Power at 3dB Power-Added-Efficiency at 3dB Gain at 3dB compression point 24 20.7 17.9 16.7 15.7 dB Notes: 1. Test conditions unless otherwise noted: VD = +50 V, IDQ = 26 mA, Temp = +25 °C RF Characterization – 0.96 – 1.215 GHz EVB Performance At 1.09 GHz1 Parameter Min Typ Max Units Linear Gain, GLIN – 19.5 – dB Output Power at 3dB compression point, P3dB – 41.4 – dBm Drain Efficiency at 3dB compression point, DEFF3dB – 53.9 – % Gain at 3dB compression point, G3dB – 16.5 – dB Notes: 1. VD = +50 V, IDQ = 26 mA, Temp = +25 °C, Pulse Width = 128 uS, Duty Cycle = 10% RF Characterization – Mismatch Ruggedness at 1.09 GHz Symbol Parameter dB Compression Typical VSWR Impedance Mismatch Ruggedness 3 10:1 Test conditions unless otherwise noted: TA = 25 °C, VD = 50 V, IDQ = 26 mA Driving input power is determined at pulsed compression under matched condition at EVB output connector.

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 4 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Maximum Gate Current 110 120 130 140 150 160 170 180 Maximum Gate Current (mA) Peak IR Surface Temperature (°C) Maximum Gate Current Vs. Peak IR Surface Temperature

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 5 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com 1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal and Reliability Information - Pulsed Parameter Conditions Values Units Thermal Resistance, IR1 (θJC) 85 °C Case

4.2 W Pdiss, 128 uS PW, 10%

5.48 °C/W Peak IR Surface Temperature1 (TCH) 108 °C Thermal Resistance, IR1 (θJC) 85 °C Case

6.3 W Pdiss, 128 uS PW, 10%

5.87 °C/W Peak IR Surface Temperature1 (TCH) 122 °C Thermal Resistance, IR1 (θJC) 85 °C Case

8.4 W Pdiss, 128 uS PW, 10%

5.95 °C/W Peak IR Surface Temperature1 (TCH) 135 °C Thermal Resistance, IR1 (θJC) 85 °C Case

10.5 W Pdiss, 128 uS PW, 10%

6.10 °C/W Peak IR Surface Temperature1 (TCH) 149 °C Thermal Resistance, IR1 (θJC) 85 °C Case

12.6 W Pdiss, 128 uS PW, 10%

6.11 °C/W Peak IR Surface Temperature1 (TCH) 162 °C Thermal Resistance, IR1 (θJC) 85 °C Case

14.7 W Pdiss, 128 uS PW, 10%

6.26 °C/W Peak IR Surface Temperature1 (TCH) 177 °C 100 110 120 130 140 150 160 170 180 Peak IR Surface Temperature ( C) Pulsed Dissipation Power (W) Peak IR Surface Temperature vs. Pulsed Dissipation Power Base of QFN Package Fixed at 85 C

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 6 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com 1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal and Reliability Information - CW Parameter Conditions Values Units Thermal Resistance, IR1 (θJC) 85 °C Case

4.2 W Pdiss, CW

7.38 °C/W Peak IR Surface Temperature1 (TCH) 116 °C Thermal Resistance, IR1 (θJC) 85 °C Case

6.3 W Pdiss, CW

7.62 °C/W Peak IR Surface Temperature1 (TCH) 133 °C Thermal Resistance, IR1 (θJC) 85 °C Case

8.4 W Pdiss, CW

7.86 °C/W Peak IR Surface Temperature1 (TCH) 151 °C Thermal Resistance, IR1 (θJC) 85 °C Case

10.5 W Pdiss, CW

8.00 °C/W Peak IR Surface Temperature1 (TCH) 169 °C Thermal Resistance, IR1 (θJC) 85 °C Case

12.6 W Pdiss, CW

8.25 °C/W Peak IR Surface Temperature1 (TCH) 189 °C Thermal Resistance, IR1 (θJC) 85 °C Case

14.7 W Pdiss, CW

8.50 °C/W Peak IR Surface Temperature1 (TCH) 210 °C 105 115 125 135 145 155 165 175 185 195 205 215 Peak IR Surface Temperature ( C) CW Dissipation Power (W) Peak IR Surface Temperature vs. CW Dissipation Power Base of QFN Package Fixed at 85 C

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 7 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Load Pull Smith Charts1, 2, 3 Notes: 1. Vd = 50 V, IDQ = 26 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 18 for load pull and source pull reference planes. 20-Ω load pull TRL fixtures are built with 20-mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1.4 1.6 1.8 1GHz, Load-pull 41.8 41.6 41.4 26.9 26.4 25.9 75.3 73.3 71.3

Max Power is 41.9dBm at Z = 43.291+21.601i  = 0.4339+0.1932i
Max Gain is 27.3dB at Z = 17.436+42.271i  = 0.5303+0.5303i
Max PAE is 77.8% at Z = 49.596+64.764i  = 0.692+0.2866i Zo = 20 3dB Compression Referenced to Peak Gain Zs(fo) = 7.8+20.21i Zl(2fo) = NaN Zl(3fo) = NaN Power Gain PAE

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 8 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Load Pull Smith Charts1, 2, 3 Notes: 1. Vd = 50 V, IDQ = 26 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 18 for load pull and source pull reference planes. 20-Ω load pull TRL fixtures are built with 20-mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 1.8 2GHz, Load-pull 42.2 41.8 21.5 20.5 71.9 69.9 67.9

Max Power is 42.4dBm at Z = 18.48+20.642i  = 0.1928+0.433i
Max Gain is 22dB at Z = 7.356+28.132i  = 0.2893+0.7308i
Max PAE is 72.4% at Z = 18.019+25.991i  = 0.283+0.4902i Zo = 20 3dB Compression Referenced to Peak Gain Zs(fo) = 5.48+6.61i Zl(2fo) = NaN Zl(3fo) = NaN Power Gain PAE

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 9 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Load Pull Smith Charts1, 2, 3 Notes: 1. Vd = 50 V, IDQ = 26 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 18 for load pull and source pull reference planes. 20-Ω load pull TRL fixtures are built with 20-mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 0.7 0.8 0.9 1.2 1.4 1.6 3GHz, Load-pull 42.2 41.8 18.9 18.4 17.9 68.8 66.8 64.8

Max Power is 42.4dBm at Z = 11.071+14.684i
Max Gain is 19dB  = 0+0.7912i
Max PAE is 69.6% at Z = 7.363+20.154i  = 0.0523+0.698i Zo = 20 3dB Compression Referenced to Peak Gain Zs(fo) = 3.07+3.29i Zl(2fo) = NaN Zl(3fo) = NaN Power Gain PAE

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 10 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Load Pull Smith Charts1, 2, 3 Notes: 1. Vd = 50 V, IDQ = 26 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 18 for load pull and source pull reference planes. 20-Ω load pull TRL fixtures are built with 20-mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 0.5 0.6 0.7 3.5GHz, Load-pull 42.1 41.9 41.7 17.1 16.6 16.1 61.4 59.4 57.4

Max Power is 42.2dBm at Z = 8.892+10.645i  = -0.219+0.4491i
Max Gain is 17.5dB at Z = 5.457+14.421i
Max PAE is 63.3% at Z = 5.457+14.421i Zo = 20 3dB Compression Referenced to Peak Gain Zs(fo) = 3.66+0.65i Zl(3fo) = NaN Power Gain PAE

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 11 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Load Pull Smith Charts1, 2, 3 Notes: 1. Vd = 50 V, IDQ = 26 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 18 for load pull and source pull reference planes. 20-Ω load pull TRL fixtures are built with 20-mil RO4350B material. 3. NaN means the impedances are either undefined or varying in load-pull system. 0.5 4GHz, Load-pull 41.8 41.6 41.4 15.5

Max Power is 41.8dBm at Z = 9.079+8.681i  = -0.263+0.377i
Max Gain is 16.4dB at Z = 4.69+11.927i
Max PAE is 54.6% at Z = 5.926+10.795i Zo = 20 3dB Compression Referenced to Peak Gain Zs(fo) = 3.54-2.07i Zs(2fo) = 5.46-9.7i Zl(2fo) = NaN Zl(3fo) = NaN Power Gain PAE

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 12 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Typical Performance – Load Pull Drive-up Notes: 1. Pulsed signal with 128 uS pulse width and 10 % duty cycle, Vd = 50 V, IDQ = 26 mA 2. See page 18 for load pull and source pull reference planes where the performance was measured. 32 33 34 35 36 37 38 39 40 41 4220 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

1 GHz - Power Tuned

Zs-fo = 7.8+20.21i Zs-2fo = 3.78-5.19i Zl-fo = 43.29+21.6i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 420 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 4120 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

1 GHz - Efficiency Tuned

Zs-fo = 7.8+20.21i Zs-2fo = 3.78-5.19i Zl-fo = 49.6+64.76i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 410 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 4317 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

2 GHz - Power Tuned

Zs-fo = 5.48+6.61i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 430 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 4217 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

2 GHz - Efficiency Tuned

Zs-fo = 5.48+6.61i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 420 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 41 42 4314 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

3 GHz - Power Tuned

Zs-fo = 3.07+3.29i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 430 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 4114 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

3 GHz - Efficiency Tuned

Zs-fo = 3.07+3.29i Zl-fo = 7.36+20.15i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 410 100 PAE [%] Gain PAE

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 13 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Typical Performance – Load Pull Drive-up Notes: 3. Pulsed signal with 128 uS pulse width and 10 % duty cycle, Vd = 50 V, IDQ = 26 mA 4. See page 18 for load pull and source pull reference planes where the performance was measured. 32 33 34 35 36 37 38 39 40 41 42 4313 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

3.5 GHz - Power Tuned

Zs-fo = 3.66+0.65i Zl-fo = 8.89+10.65i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 41 42 430 100 PAE [%] Gain PAE 32 33 34 35 36 37 38 39 40 4113 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

3.5 GHz - Efficiency Tuned

Zs-fo = 3.66+0.65i Zl-fo = 5.46+14.42i Zl-3fo = NaN 32 33 34 35 36 37 38 39 40 410 100 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 4212 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

4 GHz - Power Tuned

Zs-fo = 3.54-2.07i Zs-2fo = 5.46-9.7i Zs-3fo = 7.32-3.99i Zl-fo = 9.08+8.68i Zl-3fo = NaN 31 32 33 34 35 36 37 38 39 40 41 4210 PAE [%] Gain PAE 31 32 33 34 35 36 37 38 39 40 41 4212 Output Power [dBm] Gain [dB] QPD1009 - Gain and PAE vs. Output Power

4 GHz - Efficiency Tuned

Zs-fo = 3.54-2.07i Zs-2fo = 5.46-9.7i Zs-3fo = 7.32-3.99i Zl-fo = 5.93+10.8i Zl-3fo = NaN 31 32 33 34 35 36 37 38 39 40 41 4210 PAE [%] Gain PAE

1 Vd = 50 V, IDQ = 26 mA, Pulse Width = 128 uS, Duty Cycle = 10 %

950 1000 1050 1100 1150 1200 1250 P3dB [W] Frequency [MHz] P3dB Over Temperatures -40 °C 25 °C 85 °C 950 1000 1050 1100 1150 1200 1250 G3dB [dB] Frequency [MHz] G3dB Over Temperatures -40 °C 25 °C 85 °C 950 1000 1050 1100 1150 1200 1250 DEFF3dB [%] Frequency [MHz] DEFF3dB Over Temperatures -40 °C 25 °C 85 °C

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 15 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Power Driveup Performance At 25 °C Of 0.96 – 1.215 GHz EVB1 950 1000 1050 1100 1150 1200 1250 P3dB [W] Frequency [MHz] P3dB At 25 °C 950 1000 1050 1100 1150 1200 1250 G3dB [dB] Frequency [MHz] G3dB At 25 °C 950 1000 1050 1100 1150 1200 1250 DEFF3dB [%] Frequency [MHz] DEFF3dB At 25 °C

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 16 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Two-Tone Performance At 25 °C Of 0.96 – 1.215 GHz EVB1 1 Center frequency = 1.09 GHz, Tone Separation = 1 MHz -60 -55 -50 -45 -40 -35 -30 -25 -20 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 IM Level [dBc] Output PEP [dBm] IM Levels vs. Output PEP , Vd = 50 V, Idq = 26 mA IM3 Low Side IM3 High Side IM5 Low Side IM5 High Side -60 -55 -50 -45 -40 -35 -30 -25 -20 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 IM Level [dBc] Output PEP [dBm] IM Levels vs. Output PEP , Vd = 50 V, Idq = 52 mA IM3 Low Side IM3 High Side IM5 Low Side IM5 High Side

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 17 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Power Driveup Performance At 25 °C Of 1.1 – 1.7 GHz EVB1 P3dB [W] Frequency [GHz] P3dB At 25°C G3dB [dB] Frequency [GHz] G3dB At 25°C DEFF3dB [%] Frequency [GHz] DEFF3dB At 25°C

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 18 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Pin Layout 1 Notes: 1. The QPD1009 will be marked with the “1009” designator and a lot code marked below the part designator. The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the “MXXX” is the production lot number, and the “ZZZ” is an auto-generated serial number. Pin Description Pin Symbol Description 2, 3 VG / RF IN Gate voltage / RF Input 10, 11 VD / RF OUT Drain voltage / RF Output 1, 4, 5 – 9, 12 - 16 NC Not Connected

17 Flange Source to be connected to ground

Load Pull Reference Planes 13 14 15 16 8 7 6 5

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 19 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Mechanical Drawing1, 2, 3 Notes: 1. All dimensions are in mm. Otherwise noted, the tolerance is ±0.100 mm. 2. Package leads are gold plated. 3. Part is mold encapsulated.

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 20 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Schematic - 0.96 – 1.215 GHz EVB Bias-up Procedure Bias-down Procedure 1. Set VG to -4 V. 1. Turn off RF signal. 2. Set ID current limit to 30 mA. 2. Turn off VD 3. Apply 50 V VD. 3. Wait 2 seconds to allow drain capacitor to discharge 4. Slowly adjust VG until ID is set to 26 mA. 4. Turn off VG 5. Set ID current limit to 1.5 A 6. Apply RF. Microstrip Output Matching Network C20 C5 C7 C8 C1C15 C17R15 R3 C13 R13 R11 R12 C12 Microstrip Input Matching Network C9C14 R14 C10 C18 R8R10 C19 C11 C16 TP2 TP3TP1TP4 J1 J2 QPD1009 5 6 7 8 16 15 14 13

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 21 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com PCB Layout - 0.96 – 1.215 GHz EVB Board material is RO4360G2 0.020” thickness with 1 oz copper cladding.

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 23 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Bill Of material - 0.96 – 1.215 GHz EVB Ref Des Value Description Manufacturer Part Number C14, 15 100 pF C0G 100V 5% 0603 Capacitor AVX 06031A101JAT2A C8 - 10 1 nF X7R 100V 5% 0603 Capacitor AVX 06031C102JAT2A C17 - 18 100 nF X7R 100V 5% 0805 Capacitor AVX 08051C104JAT2A C4 0.2 pF RF NPO 250VDC ± 0.05 pF Capacitor ATC ATC600S0R2AT250X C13 1.0 pF RF NPO 250VDC ± 0.05 pF Capacitor ATC ATC600S1R0AT250X C6 1.5 pF RF NPO 250VDC ± 0.05 pF Capacitor ATC ATC600S1R5AT250X C19 6.8 pF RF NPO 250VDC ± 0.1 pF Capacitor ATC ATC600S6R8BT250X C11, 16 7.5 pF RF NPO 250VDC ± 0.1 pF Capacitor ATC ATC600S7R5BT250X C3, 5, 7, 9, 12 56 pF RF NPO 250VDC 1% Capacitor ATC ATC600S5650FT250X C1 33 uF 80V SVP Capacitor Panasonic EEEFK1K330P C2 10 uF 16V Tantalum Capacitor AVX TPSC106KR0500 J1 - 2 SMA Panel Mount 4-hole Jack Gigalane PSF-S00-000 R4, 6 1 Ohm 0603 1% Thick Film Resistor ANY R1, 2, 8, 10, 13, 14, 15 5.1 Ohm 0603 1% Thick Film Resistor ANY R3, 5 33 Ohm 0603 1% Thick Film Resistor ANY R11, 12 150 Ohm 0603 1% Thick Film Resistor ANY R7, 9 430 Ohm 0603 1% Thick Film Resistor ANY

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 24 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Schematic – 1.1 – 1.7 GHz EVB Bias-up Procedure Bias-down Procedure 2. Set VG to -4 V. 3. Turn off RF signal. 4. Set ID current limit to 30 mA. 4. Turn off VD 5. Apply 50 V VD. 5. Wait 2 seconds to allow drain capacitor to discharge 6. Slowly adjust VG until ID is set to 26 mA. 7. Turn off VG 8. Set ID current limit to 1.5 A 9. Apply RF.

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 25 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com PCB Layout – 1.1 – 1.7 GHz EVB Board material is RO4360G2 0.020” thickness with 1 oz copper cladding.

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 26 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Bill Of material – 1.1 – 1.7 GHz EVB Comp. Desig. Value Quantity Part number Manufacturer C1 3.9 pF 1 600S3R9AT250XT ATC C2 3.3 pF 1 600S3R3AT250XT ATC C3, C4 22 pF 2 600S220FT250XT ATC C5, C6 0.01 uF 2 ECJ-2VB2A103K Panasonic C7 1 uF, 25 V 1 GCM21BR71E105KA56L Murata C8 0.1 uF, 100 V 1 08051C104JAT2A AVX C9 100 uF, 63 V 1 EEETG1J101UP Panasonic C10 1 uF, 16 V 1 GCM188R71C105KA64D Murata L1 5.6 nH 1 0603CS-5N6XJEW Coilcraft L2 5.6 nH 1 0603HP-5N6XJLW Coilcraft R1, R2 5.6 Ohm 2 CRCW06035R60JNEA Vishay R4, R5, R6 51.1 Ohm 3 CRCW060351R1FKTA Vishay R3 10 Ohm 1 CRCW060310R0JNTA Vishay PCB

1 RO4360G2, 32 mil, 1 oz copper Rogers

15W, 50V, DC – 4 GHz, GaN RF Transistor Rev. F - 28 of 28 - Disclaimer: Subject to change without notice © 2019 Qorvo www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1A ANSI/ESD/JEDEC JS-001 ESD – Charged Device Model (CDM) Class C2B, 1000 V ANSI/ESD/JEDEC JS-002 MSL – Moisture Sensitivity Level MSL3 JESD J-STD-020 Solderability Solder profiles available upon request. Contact plating: NiPdAu RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electr ical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:

Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
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Product Information

1132871 specifications and overview.

Summary

15W, 50V, DC ??4 GHz, GaN RF Transistor 2019

Description

15W, 50V, DC ??4 GHz, GaN RF Transistor 2019

Source title 1132871 Datasheet(PDF) - Qorvo, Inc

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