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5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 1 of 21 www.qorvo.com General Description The Qorvo TGF2965-SM is a 6 W (P3dB), 50 Ω-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. The device is housed in an industry-standard 3 x 3 mm surface mount QFN package. Lead-free and ROHS compliant Evaluation boards are available upon request. Product Features

  • Frequency: 0.03 to 3.0 GHz
  • Output Power (P3dB)1: 6.0 W
  • Linear Gain1: 18 dB
  • Typical DEFF3dB1: 65%
  • Operating Voltage: 32 V
  • Low thermal resistance package
  • CW and Pulse capable
  • 3 x 3 mm package

1 At 2 GHz

Applications

  • Military Radar
  • Civilian Radar
  • Land Mobile and Military Radio Communications
  • Test Instrumentation
  • Wideband and Narrowband Amplifiers
  • Jammers

Ordering Information

1123170 TGF2965-SM 100 pc MOQ

1123185 TGF2965-SM EVB

TGF2965-SMTR13 TGF2965-SM Tape/Reel 2500 pc MOQ 103 Input MN

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 2 of 21 www.qorvo.com Absolute Maximum Ratings Parameter Value/Range Breakdown Voltage (BVDG) 100 V min. Gate Voltage Range (VG) -7 to +2 V Drain Current (ID) 0.6 A Gate Current (IG) See page 4. Power Dissipation (PD) 7.5 W RF Input Power, CW, T = 25 °C (PIN) 30 dBm Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter1 Value/Range Drain Voltage (VD) 32 V (Typ.) Drain Quiescent Current (IDQ) 25 mA (Typ.) Peak Drain Current ( ID) 326 mA (Typ.) Gate Voltage (VG) -2.7 V (Typ.) Power Dissipation, CW (PD) 7.05 W (Max) Power Dissipation, Pulse (PD)2 9.1 W (Max) 1Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. 2100uS Pulse Width, 20% Duty Cycle RF Characterization–Load Pull Performance Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 30 mA, Pulse: 100 uS Pulse Width, 20% Duty Cycle Symbol Parameter Typical Units F Frequency 1 1.5 2 2.5 3 GHz DEFF3dB Drain Efficiency at 3 dB Gain Compression, RF Characterization–0.03–3 GHz EVB Performance at 2.5 GHz–Pulsed Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 30 mA, Pulse: 100 uS Pulse Width, 20% Duty Cycle Symbol Parameter Min Typical Max Units GLIN Linear Gain 17.1 dB P3dB Output Power at 3 dB Gain Compression 5.0 W DE3dB Drain Efficiency at 3 dB Gain Compression 50.6 % G3dB Gain at 3 dB Compression 14.1 dB RF Characterization–Mismatch Ruggedness at 1, 2 and 3 GHz Test conditions unless otherwise noted: TA = 25 °C, VD = 28 V, IDQ = 30 mA, Pulse: 100 uS Pulse Width, 20% Duty Cycle Driving input power is determined at pulsed compression under matched condition at EVB output connector. Symbol Parameter dB Compression Typical VSWR Impedance Mismatch Ruggedness 3 10:1 VSWR Impedance Mismatch Ruggedness 8 2:1

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 3 of 21 www.qorvo.com Load Pull Smith Charts 1, 2 RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. 32 V, 30 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain. 2. See page 18 for load pull and source pull reference planes. 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 910 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 1GHz, Load-pull 37.5 37 36.5 15.6 15.114.6 75.2 61.2 59.2 57.2

  • Max Power is 37.8dBm at Z = 48.74+16.85i  = -0.096+0.1665i
  • Max Gain is 15.7dB at Z = 85.24+96.67i  = 0.4099+0.3869i
  • Max DEff is 76% at Z = 67.95+113.11i  = 0.4555+0.4732i Zo = 62.2 3dB Compression Referenced to Peak Gain Power Gain DEFF

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 4 of 21 www.qorvo.com Load Pull Smith Charts 1, 2 RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. 32 V, 30 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain. 2. See page 18 for load pull and source pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 910 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 1.5GHz, Load-pull 37.6 37.1 36.6 15.9 15.4 14.9

  • Max Power is 37.7dBm at Z = 38.06+15.94i
  • Max Gain is 16dB at Z = 45.53+70.66i  = 0.1926+0.5296i
  • Max DEff is 62.7% at Z = 33.77+74.59i  = 0.1919+0.6281i Zo = 62.2 3dB Compression Referenced to Peak Gain Zs(1fo) = 66-17.71i Power Gain DEFF

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 5 of 21 www.qorvo.com Load Pull Smith Charts 1, 2 RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. 32 V, 30 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain. 2. See page 18 for load pull and source pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.6 1.8 2GHz, Load-pull 37.3 36.8 36.3 16.1 15.6 15.162.1 54.1 52.1 50.1

  • Max Power is 37.8dBm at Z = 39.49+18.77i  = -0.183+0.2184i
  • Max Gain is 16.4dB at Z = 22.85+52.66i
  • Max DEff is 65.2% at Z = 87.03+74.64i  = 0.3332+0.3335i Zo = 62.2 3dB Compression Referenced to Peak Gain Power Gain DEFF

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 6 of 21 www.qorvo.com Load Pull Smith Charts 1, 2 RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. 32 V, 30 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain. 2. See page 18 for load pull and source pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 0.4 0.5 0.6 0.7 0.8 0.9 1.2 2.5GHz, Load-pull 37.9 37.4 36.9 15.4 14.9 14.4

  • Max Power is 38.1dBm  = -0.267+0.2673i
  • Max Gain is 15.4dB at Z = 25.87+41.05i
  • Max DEff is 65.4% at Z = 20.94+47.51i Zo = 62.2 3dB Compression Referenced to Peak Gain Power Gain DEFF

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 7 of 21 www.qorvo.com Load Pull Smith Charts 1, 2 RF performance that the device typically exhibits when placed in the specified impedance environment. The impedances are not the impedances of the device, they are the impedances presented to the device via an RF circuit or load-pull system. The impedances listed follow an optimized trajectory to maintain high power and high efficiency. Notes: 1. 32 V, 30 mA, Pulsed signal with 100 uS pulse width and 20% duty cycle. 3 dB compression referenced to peak gain. 2. See page 18 for load pull and source pull reference planes. 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.2 1.4 1.6 1.8 0.4 0.5 0.6 0.7 0.8 0.9 1.2 3GHz, Load-pull 38.2 37.8 14.4 13.9 13.4 69.2 63.2 61.2 59.2

  • Max Power is 38.3dBm at Z = 31.78+19.84i
  • Max Gain is 14.4dB  = -0.3165+0.576i
  • Max DEff is 71.9% at Z = 13.91+46.16i Zo = 62.2 3dB Compression Referenced to Peak Gain Power Gain DEFF

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 8 of 21 www.qorvo.com Typical Performance–Power Tuned 1,2 Notes: 1. Pulsed signal with 100uS pulse width and 20% duty cycle 2. See page 18 for load pull and source pull reference planes where the performance was measured. 27 28 29 30 31 32 33 34 35 36 37 38 3913 13.5 14.5 15.5 16.5 17.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

1 GHz - Power Tuned

27 28 29 30 31 32 33 34 35 36 37 38 3910 DEFF (%) Gain DEFF 26 27 28 29 30 31 32 33 34 35 36 37 3813 13.5 14.5 15.5 16.5 17.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

1.5 GHz - Power Tuned

Zs(1fo) = 66-17.71i 26 27 28 29 30 31 32 33 34 35 36 37 3810 DEFF (%) Gain DEFF 29 30 31 32 33 34 35 36 37 3814 14.5 15.5 16.5 17.5 18.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

2 GHz - Power Tuned

29 30 31 32 33 34 35 36 37 3815 DEFF (%) Gain DEFF 27 28 29 30 31 32 33 34 35 36 37 38 3914 14.5 15.5 16.5 17.5 18.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

2.5 GHz - Power Tuned

27 28 29 30 31 32 33 34 35 36 37 38 3915 DEFF (%) Gain DEFF 26 27 28 29 30 31 32 33 34 35 36 37 38 3913 13.5 14.5 15.5 16.5 17.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

3 GHz - Power Tuned

26 27 28 29 30 31 32 33 34 35 36 37 38 3915 DEFF (%) Gain DEFF

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 9 of 21 www.qorvo.com Typical Performance–Efficiency Tuned 1,2 Notes: 1. Pulsed signal with 100uS pulse width and 20% duty cycle 2. See page 18 for load pull and source pull reference planes where the performance was measured. 29 30 31 32 33 3415 15.5 16.5 17.5 18.5 19.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

1 GHz - Efficiency Tuned

DEFF (%) Gain DEFF 28 29 30 31 32 33 34 3515 15.5 16.5 17.5 18.5 19.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

1.5 GHz - Efficiency Tuned

Zs(1fo) = 66-17.71i 28 29 30 31 32 33 34 3520 DEFF (%) Gain DEFF 27 28 29 30 31 32 33 34 35 36 3714 14.5 15.5 16.5 17.5 18.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

2 GHz - Efficiency Tuned

27 28 29 30 31 32 33 34 35 36 3720 DEFF (%) Gain DEFF 28 29 30 31 32 33 34 35 3614 14.5 15.5 16.5 17.5 18.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

2.5 GHz - Efficiency Tuned

28 29 30 31 32 33 34 35 3620 DEFF (%) Gain DEFF 26 27 28 29 30 31 32 33 34 35 3613 13.5 14.5 15.5 16.5 17.5 Output Power [dBm] Gain (dB) Gain and DEFF vs. Output Power

3 GHz - Efficiency Tuned

26 27 28 29 30 31 32 33 34 35 3625 DEFF (%) Gain DEFF

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 10 of 21 www.qorvo.com 0.03–3 GHz Evaluation Board Performance Over Temperature1, 2 Performance measured on Qorvo’s 0.03 GHz to 3 GHz Evaluation Board. Notes: 1. Test Conditions: VDS = 32 V, IDQ = 30 mA 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20% 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 P3dB [W] Frequency [GHz] P3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 45°C 65°C 85°C G3dB [dB] Frequency [GHz] G3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 45°C 65°C 85°C 100 PAE3dB [%] Frequency [GHz] PAE3dB vs. Frequency vs. Temperature -40°C -20°C 0°C 25°C 45°C 65°C 85°C

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 11 of 21 www.qorvo.com 0.03–3 GHz Evaluation Board Performance At 25 °C1, 2 – Pulsed Performance measured on Qorvo’s 0.03 GHz to 3 GHz Evaluation Board. Notes: 1. Test Conditions: VDS = 32 V, IDQ = 30 mA, 25 °C 2. Test Signal: Pulse Width = 100 µs, Duty Cycle = 20% 0.03–3 GHz Evaluation Board Performance At 25 °C1 – CW Performance measured on Qorvo’s 0.03 GHz to 3 GHz Evaluation Board. Notes: 1. Test Conditions: VDS = 32 V, IDQ = 30 mA, 25 °C 5.0 6.5 8.0 9.5 11.0 12.5 14.0 15.5 17.0 18.5 20.0 G3dB [dB] P3dB [W] Frequency [GHz] P3dB and G3dB vs. Frequency @ 25°C P3dB G3dB 100 PAE [%] Frequency [GHz] PAE vs. Frequency at 25°C 6.5 9.5 12.5 15.5 18.5 P3dB [W] Frequency [GHz] P3dB and G3dB vs. Frequency @ 25°C P3dB G3dB G3dB [dB] 100 PAE [%] Frequency [GHz] PAE vs. Frequency at 25°C

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 12 of 21 www.qorvo.com 0.03 – 3 GHz Evaluation Board Performance–Two-Tone Measurements 1 Notes: 1. The Intermodulation Distortion products (IMD) are referenced to peak-envelope output power, which is 6 dB above single-tone output power -70 -60 -50 -40 -30 -20 25 26 27 28 29 30 31 32 33 34 35 36 IMD [dBc] Peak-Envelope Output Power [dBm] EVB Two-Tone Measurements f1 = 99.5MHz, f2 = 100.5MHz, Vd = 32V, Idq = 30mA, T = 25°C 3rd Order 5th Order -70 -60 -50 -40 -30 -20 25 26 27 28 29 30 31 32 33 34 35 36 IMD [dBc] Peak-Envelope Output Power [dBm] EVB Two-Tone Measurements f1 = 499.5MHz, f2 = 500.5MHz, Vd = 32V, Idq = 30mA, T = 25°C 3rd Order 5th Order -70 -60 -50 -40 -30 -20 25 26 27 28 29 30 31 32 33 34 35 36 IMD [dBc] Peak-Envelope Output Power [dBm] EVB Two-Tone Measurements f1 = 999.5MHz, f2 = 1000.5MHz, Vd = 32V, Idq = 30mA, T = 25°C 3rd Order 5th Order -70 -60 -50 -40 -30 -20 25 26 27 28 29 30 31 32 33 34 35 36 IMD [dBc] Peak-Envelope Output Power [dBm] EVB Two-Tone Measurements f1 = 1999.5MHz, f2 = 2000.5MHz, Vd = 32V, Idq = 30mA, T = 25°C 3rd Order 5th Order -70 -60 -50 -40 -30 -20 25 26 27 28 29 30 31 32 33 34 35 36 IMD [dBc] Peak-Envelope Output Power [dBm] EVB Two-Tone Measurements f1 = 2999.5MHz, f2 = 3000.5MHz, Vd = 32V, Idq = 30mA, T = 25°C 3rd Order 5th Order

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 13 of 21 www.qorvo.com Maximum Gate Current 110 120 130 140 150 160 170 180 Maximum Gate Current (mA) Peak IR Surface Temperature ( C) Maximum Gate Current Vs. Peak IR Surface Temperature

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 14 of 21 www.qorvo.com 1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal and Reliability Information - CW Parameter Conditions Values Units Thermal Resistance, IR1 (θJC) 85 °C Case

1.26 W Pdiss, CW

9.9 °C/W Peak IR Surface Temperature1 (TCH) 97.4 °C Thermal Resistance, IR1 (θJC) 85 °C Case

2.52 W Pdiss, CW

11.1 °C/W Peak IR Surface Temperature1 (TCH) 113 °C Thermal Resistance, IR1 (θJC) 85 °C Case

3.78 W Pdiss, CW

11.6 °C/W Peak IR Surface Temperature1 (TCH) 129 °C Thermal Resistance, IR1 (θJC) 85 °C Case

5.04 W Pdiss, CW

11.9 °C/W Peak IR Surface Temperature1 (TCH) 145 °C Thermal Resistance, IR1 (θJC) 85 °C Case

6.30 W Pdiss, CW

12.2 °C/W Peak IR Surface Temperature1 (TCH) 162 °C Thermal Resistance, IR1 (θJC) 85 °C Case

7.56 W Pdiss, CW

12.5 °C/W Peak IR Surface Temperature1 (TCH) 180 °C 105 115 125 135 145 155 165 175 185 Peak IR Surface Temperature ( C) CW Power Dissipation (W) Peak IR Surface Temperature vs. CW Power Dissipation Backside of QFN base fixed at 85 C

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 15 of 21 www.qorvo.com 1Refer to the following document GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates Thermal and Reliability Information - Pulsed Parameter Conditions Values Units Thermal Resistance, IR1 (θJC) 85 °C Case

7.6 W Pdiss, 100 uS Pulse Width, 5% DC

9.1 °C/W Peak IR Surface Temperature1 (TCH) 154 °C Thermal Resistance, IR1 (θJC) 85 °C Case

7.6 W Pdiss, 100 uS Pulse Width, 10% DC

9.3 °C/W Peak IR Surface Temperature1 (TCH) 156 °C Thermal Resistance, IR1 (θJC) 85 °C Case

7.6 W Pdiss, 100 uS Pulse Width, 20% DC

9.6 °C/W Peak IR Surface Temperature1 (TCH) 158 °C Thermal Resistance, IR1 (θJC) 85 °C Case

7.6 W Pdiss, 100 uS Pulse Width, 50% DC

10.5 °C/W Peak IR Surface Temperature1 (TCH) 165 °C 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 Peak IR Surface Temperature (°C) Pulse Width (S) Peak IR Surface Channel Temperature QFN base fixed at 85 °C, Pdiss = 7.6 W 5% Duty Cycle 10% Duty Cycle 20% Duty Cycle 50% Duty Cycle

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 16 of 21 www.qorvo.com Bias-up Procedure Bias-down Procedure VG set to-5 V. Turn off RF signal VD set to 32 V. Turn off VD and wait 1 second to allow drain capacitor dissipation Adjust VG more positive until quiescent ID is 30 mA. Apply RF signal. Turn off VG 0.03–3 GHz Application Circuit QFN3x3_16pin 1_0 RFIN RFOUT1 RFOUT2 P12 P13 BYP P15 P16 L R R L L R C R C RFIN C Vgate C C L R L L R C C C R VDD RFOUTC L

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 17 of 21 www.qorvo.com Reference Des. Value Qty Manuf. Part Number C1, C2, C5, C6 2400 pF 4 DLI C08BL102X-1UN-X0T C3 0.2 pF 1 Murata GRM1555C1HR20BZ01 C4, C7 10 uF 2 TDK C1632X5R0J106M130AC C8 1 uF 1 AVX 18121C105KAT2A C9 220 uF 1 United Chemicon EMVY500ADA221MJA0G L1 2 nH 1 CoilCraft 0603HC-2N0XJLU L2, L5 82 nH 2 CoilCraft 1008CS-820XGLB L3, L6 100 nH 2 CoilCraft 1008CS-101XGLB L4, L7 900 nH 2 CoilCraft 1008AF-901XJLB R1 499 Ω 1 Venkel CR0603-10W-4990FT R2, R3, R4, R5 400 Ω 4 Venkel CR0805-8W-4020FT R6 1 kΩ 1 Venkel CR0603-10W-1001FT R7 0 Ω DNP 00.03–3 GHz EVB Bill of Materials 0.03–3 GHz Evaluation Board Layout Top RF layer is 0.020” thick Rogers RO4350B, ɛr = 3.48. The pad pattern shown has been developed and tested for optimized assembly at Qorvo Semiconductor. The PCB land pattern has been developed to accommodate lead and package tolerances.

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 18 of 21 www.qorvo.com Pin Layout Pin Description Pin Number Symbol Description 10, 11 VD/RF OUT Drain voltage / RF Output to be matched to 50 ohms; see EVB Layout on page 19 as an example. 3 VG/RF IN Gate voltage / RF Input to be matched to 50 ohms; see EVB Layout on page 19 as an example.

6 Off-chip Cap Off-chip capacitor to extend low-frequency gain

Back side Source Source connected to ground Notes: 1. Thermal resistance measured to back side of package. 2. The TGF2965-SM will be marked with the “TGF2965” designator and a lot code marked below the part designator The “YY” represents the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, and the “MXXX” is the production lot number.

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 19 of 21 www.qorvo.com Mechanical Information All dimensions are in millimeters. Note: 1. Unless otherwise noted, all dimension tolerances are +/-0.127 mm. 2. This package is lead-free/RoHS-compliant. The plating material on the leads is NiAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and tin-lead (maximum 245 °C reflow temperature) soldering processes

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 20 of 21 www.qorvo.com Recommended Soldering Temperature Profile

5 W, 32 V, 0.03–3 GHz, GaN RF Input-Matched Transistor Data Sheet Rev. B, May 2019 | Subject to change without notice 21 of 21 www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1B JEDEC/JESD22-A114 MSL – Moisture Sensitivity Level MSL3 IPC/JEDEC/J-STD-020 RoHS Compliance This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment) as amended by Directive 2015/863/EU. This product also has the following attributes:

  • Lead Free
  • Antimony Free
  • TBBP-A (C15H12Br402) Free
  • PFOS Free
  • SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about Qorvo: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com For technical questions and application information: Email: info-products@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO TH E PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical componen ts in medical, life-saving, or life-sustaining applications, or other application s where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Solderability Solder profiles available upon request. Contact plating: NiPdAu Au thickness is 0.00254 µm min.