1115956

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Technical content

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 1 of 14 - www.qorvo.com Product Description Qorvo’s TGA2238-CP is a packaged, high power X -band amplifier fabricated on Qorvo’s QGaN25 0.25 um GaN on SiC production process. Operating from 8 – 11 GHz, the TGA2238-CP achieves 50 W saturated output power with 24 dB power gain and 34 % power-added efficiency. The TGA2238 -CP is packaged in a 10 -lead 15 x 15 mm bolt-down package with a Cu base for superior thermal management. Both RF ports (RF input internally DC blocked) are matched to 50 ohms allowing for simple system integration. The TGA2238 -CP is ideally suited for both military and commercial X-band radar systems and data links. Lead-free and RoHS compliant.

Ordering Information

Part No. Description TGA2238-CP 8 – 11 GHz 50 W GaN Power Amplifier

1115956 Evaluation Board

• Frequency Range: 8 – 11 GHz
• PSAT: 47 dBm @ PIN = 23 dBm
• PAE: 34% @ PIN = 23 dBm
• Power Gain: 24 dB @ PIN = 23 dBm
• Small Signal Gain: > 28 dB
• Return Loss: > 9 dB
• Bias: VD = +28 V, IDQ = 650 mA, VG = −2.6 V typical (Pulsed VD: PW = 100 µs and DC = 10 %)
• Package Dimensions: 15.2 x 15.2 x 3.5 mm
• Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please reference electrical specification table and data plots for more details

Applications

• X-band Radar
• Datalinks

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 2 of 14 - www.qorvo.com Absolute Maximum Ratings Parameter Value / Range Drain Voltage (VD) 40 V Gate Voltage Range (VG) −8 to 0 V Drain Current (ID) 8 A Gate Current (IG) See plot page 9 Power Dissipation (PDISS), 85°C Pulsed: PW = 100 µs, DC = 10% 158 W Input Power (PIN), 50Ω, 85°C, VD = 28V, Pulsed: PW = 100 µs, DC = 10% 30 dBm Input Power (PIN), 85°C, VSWR 3:1, VD = 28V, Pulsed: PW = 100 µs, DC = 10% 30 dBm Lead Soldering Temperature (30 Seconds) 260 ºC Storage Temperature −55 to 150 ºC Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Recommended Operating Conditions Parameter Value / Range Drain Voltage (VD) 28 V Drain Current (IDQ) 650 mA Temperature Range −40 to +85 ºC Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Parameter Min Typ Max Units Operational Frequency Range 8 11 GHz Small Signal Gain >28 dB Input Return Loss >9 dB Output Return Loss >10 dB Output Power (PIN = 23 dBm) 47 dBm Power Added Efficiency (PIN = 23 dBm) 34 % Power Gain (PIN = 23 dBm) 24 dB Gate Leakage (VD = +10 V, VG = −3.7V) −29 mA Small Signal Gain Temperature Coefficient −0.056 dBm/°C Power Temperature Coefficient (PIN=23 dBm) −0.001 dBm/°C Test conditions unless otherwise noted: 25 ºC, VD = +28 V, IDQ = 650 mA, VG = −2.6 V typical, Pulsed VD: PW = 100 µs, DC = 10 %

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 3 of 14 - www.qorvo.com Typical Performance – Large Signal (Pulsed) Output power (dBm) Frequency (GHz) Output Power vs. Frequency vs. Voltage PIN = 23 dBm Pulsed: PW = 100 µs, DC = 10% IDQ = 650 mA 25 V 28 V 30 V Temp. = 25 °C Output Power (dBm) Frequency (GHz) Output Power vs. Frequency vs. Temp. PIN = 23 dBm Pulsed: PW = 100 µs, DC = 10% VD = 28 V, IDQ = 650 mA -40 °C 25 °C 85 °C 0 5 10 15 20 25 Output Power (dBm) Input Power (dBm) Output Power vs. Input Power vs. Freq.

8 GHz

9 GHz

10 GHz

VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C

11 GHz

Output Power (dBm) Frequency (GHz) Output Power vs. Frequency vs. PIN 20 dBm 22 dBm 23 dBm VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C 25 dBm PAE (%) Frequency (GHz) PAE vs. Frequency vs. Voltage PIN = 23 dBm Pulsed: PW = 100 µs, DC = 10% IDQ = 650 mA 25 V 28 V 30 V Temp. = 25 °C PAE (%) Frequency (GHz) PAE vs. Frequency vs. Temp. PIN = 23 dBm -40 °C 25 °C 85 °C Pulsed: PW = 100 µs, DC = 10% VD = 28 V, IDQ = 650 mA

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 4 of 14 - www.qorvo.com Typical Performance – Large Signal (Pulsed) -0.08 -0.06 -0.04 -0.02 0.00 0.02 0.04 0.06 0.08 Gate Current (mA) Frequency (GHz) Gate Current vs. Frequency vs. Voltage PIN = 23 dBm Pulsed: PW = 100 µs, DC = 10% IDQ = 650 mA

25 V 28 V 30 V

Temp. = 25 °C 0 5 10 15 20 25 PAE (%) Input Power (dBm) PAE vs. Input Power vs. Freq. VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C PAE (%) Frequency (GHz) PAE vs. Frequency vs. PIN 20 dBm 22 dBm 23 dBm VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C 25 dBm 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Drain Current (A) Frequency (GHz) Drain Current vs. Frequency vs. Voltage PIN = 23 dBm Pulsed: PW = 100 µs, DC = 10% IDQ = 650 mA 25 V 28 V 30 V Temp. = 25 °C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 Drain Current (A) Frequency (GHz) Drain Current vs. Frequency vs. Temp. PIN = 23 dBm Pulsed: PW = 100 µs, DC = 10% VD = 28 V, IDQ = 650 mA -40 °C 25 °C 85 °C -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 Gate Current (mA) Frequency (GHz) Gate Current vs. Frequency vs. Temp. PIN = 23 dBm Pulsed: PW = 100 µs, DC = 10% VD = 28 V, IDQ = 650 mA -40 °C 25 °C 85 °C

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 5 of 14 - www.qorvo.com Typical Performance – Large Signal (Pulsed) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 5 10 15 20 25 Drain Current (A) Input Power (dBm) Drain Current vs. Input Power vs. Freq. VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C -0.05 0.00 0.05 0.10 0.15 0.20 0.25 0 5 10 15 20 25 Gate Current (mA) Input Power (dBm) Gate Current vs. Input Power vs. Freq.

11 GHz10 GHz9 GHz

VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 7 8 9 10 11 12 Drain Current (A) Frequency (GHz) Drain Current vs. Frequency vs. PIN 20 dBm 22 dBm 23 dBm VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C 25 dBm -0.05 0.00 0.05 0.10 0.15 0.20 0.25 7 8 9 10 11 12 Gate Current (mA) Frequency (GHz) Gate Current vs. Frequency vs. PIN 20 dBm 22 dBm 23 dBm VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C 25 dBm 7 8 9 10 11 12 Power Gain (dB) Frequency (GHz) Power Gain vs. Frequency vs. PIN 20 dBm 22 dBm 23 dBm VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C 25 dBm 0 5 10 15 20 25 Power Gain (dB) Input Power (dBm) Power Gain vs. Input Power vs. Freq. VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C

11 GHz10 GHz9 GHz8 GHz

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 6 of 14 - www.qorvo.com Performance Plots – Large Signal (Pulsed) -40 -35 -30 -25 -20 -15 -10 7 8 9 10 11 12 2nd Harmonic (dBc) Frequency (GHz) 2nd Harmonic vs. Frequency vs. Temp. -40 °C 25 °C 85 °C VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% PIN = 10 dBm -40 -35 -30 -25 -20 -15 -10 7 8 9 10 11 12 2nd Harmonic (dBc) Frequency (GHz) 2nd Harmonic vs. Frequency vs. Temp. -40 °C 25 °C 85 °C VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% PIN = 15 dBm -40 -35 -30 -25 -20 -15 -10 7 8 9 10 11 12 2nd Harmonic (dBc) Frequency (GHz) 2nd Harmonic vs. Frequency vs. Temp. -40 °C 25 °C 85 °C VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% PIN = 20 dBm -40 -35 -30 -25 -20 -15 -10 7 8 9 10 11 12 2nd Harmonic (dBc) Frequency (GHz) 2nd Harmonic vs. Frequency vs. Temp. -40 °C 25 °C 85 °C VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% PIN = 25 dBm -40 -35 -30 -25 -20 -15 -10 7 8 9 10 11 12 2nd Harmonic (dBc) Frequency (GHz) 2nd Harmonic vs. Frequency vs. PIN 10 dBm 15 dBm 20 dbm VD = 28 V, IDQ = 650 mA Pulsed: PW = 100 µs, DC = 10% Temp. = 25 °C 25 dbm

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 7 of 14 - www.qorvo.com Performance Plots – Small Signal (CW) 7 8 9 10 11 12 S21 (dB) Frequency (GHz) Gain vs. Frequency vs. VD 25 V 28 V 30 V Temp = 25 °C IDQ = 650 mA 7 8 9 10 11 12 S21 (dB) Frequency (GHz) Gain vs. Frequency vs. IDQ Temp = 25 °C 1000 mA 650 mA VD = 28 V 7 8 9 10 11 12 S21 (dB) Frequency (GHz) Gain vs. Frequency vs. Temp. -40 °C 25 °C 85 °C VD = 28 V, IDQ = 650 mA -30 -27 -24 -21 -18 -15 -12 7 8 9 10 11 12 S11 (dB) Frequency (GHz) Input Return Loss vs. Frequency vs. Temp. -40 °C 25 °C 85 °C VD = 28 V, IDQ = 650 mA -30 -27 -24 -21 -18 -15 -12 7 8 9 10 11 12 S22 (dB) Frequency (GHz) Output Return Loss vs. Freq. vs. Temp. -40 °C 25 °C 85 °C VD = 28 V, IDQ = 650 mA

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 8 of 14 - www.qorvo.com Performance Plots – Small Signal (CW) -30 -27 -24 -21 -18 -15 -12 7 8 9 10 11 12 S11 (dB) Frequency (GHz) Input Return Loss vs. Frequency vs. VD Temp = 25 °C 25 V 28 V 30 V IDQ = 650 mA -30 -27 -24 -21 -18 -15 -12 7 8 9 10 11 12 S22 (dB) Frequency (GHz) Output Return Loss vs. Frequency vs. VD Temp = 25 °C 25 V 28 V 30 V IDQ = 650 mA -30 -27 -24 -21 -18 -15 -12 7 8 9 10 11 12 S11 (dB) Frequency (GHz) Input Return Loss vs. Frequency vs. IDQ Temp = 25 °C 1000 mA 650 mA VD = 28 V -30 -27 -24 -21 -18 -15 -12 7 8 9 10 11 12 S22 (dB) Frequency (GHz) Output Return Loss vs. Frequency vs. IDQ Temp = 25 °C 1000 mA 650 mA VD = 28 V

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 9 of 14 - www.qorvo.com Dissipated Power and Maximum Gate Current Thermal and Reliability Information Parameter Test Conditions Value Units Thermal Resistance (θJC) (1) VD = 28 V, IDQ = 650 mA, Tbase = 85 °C, PDISS = 18.2 W (Quisecent) 0.33 ºC/W Channel Temperature, TCH (No RF) (2) 91 ºC Thermal Resistance (θJC) (1) VD = 28 V, IDQ = 650 mA, (Pulsed VD : PW = 100 µs, DC = 10 %), Tbase = 85 °C, VD = 28 V, ID_Drive = 5.9 A, PIN = 25 dBm, POUT = 47.5dBm, PDISS = 108 W 0.52 ºC/W Channel Temperature, TCH (Under RF) (2) 141 ºC Notes: 1. Thermal resistance is referenced to the back of package (85 ºC) 2. Refer to the following document: GaN Device Channel Temperature, Thermal Resistance, and Reliability Estimates 100 120 140 160 180 200 220 125 135 145 155 165 175 Maximum Gate Current (mA) Channel Temperature (°C) IG_MAX vs. TCH 100 110 120 7 8 9 10 11 12 PDISS (W) Frequency (GHz) PDISS vs. Frequency vs. PIN VD = 28 V, IDQ = 650 mA PIN = 25 dBm PIN = 23 dBm TBASE = +85°C Pulsed: PW = 100 µs, DC = 10%

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 10 of 14 - www.qorvo.com Applications Information and Pin Layout Notes: 1. VG must be biased from both sides (Pins 1 and 5) 2. VD must be biased from both sides (Pins 6 and 10) Bias Up Procedure 1. Set ID limit to 7 A, IG limit to 20 mA 2. Apply −5 V to VG 3. Apply 28 V to VD; ensure IDQ is approx. 0 mA 4. Adjust VG until IDQ = 650 mA (VG ~ −2.6 V Typ.). 5. Turn on RF supply Bias Down Procedure 1. Turn off RF supply 2. Reduce VG to −5 V; ensure IDQ is approx. 0 mA 3. Set VD to 0 V 4. Turn off VD supply 5. Turn off VG supply Pin Description Pad No. Symbol Description 1,5 VG Gate Voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 2,4,7,9 GND Must be grounded on the PCB.

3 RFIN Input; matched to 50 Ω; DC blocked

6,10 VD Drain voltage; Bias network is required; must be biased from both sides; see recommended Application Information above. 8 RFOUT Output; matched to 50 Ω; DC shorted to ground. RFOUTRFIN VDVG C1C5 0.01 uF10 uF 10 uF C6 C2 0.01 uF

10 Ohms

0.1 uF C10 0.1 uF 0.01 uF 0.01 uF

5.1 Ohms

0.1 uF 0.1 uF (Note 1) (Note 2)

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 11 of 14 - www.qorvo.com Evaluation Board (EVB) Assembly Drawing PCB NOTES: 2. Both Top and Bottom VD and VG must be biased. Bill of Materials Reference Des. Value Description Manuf. Part Number C1, C2, C7, C8 0.01 uF Cap, 0402, 50 V, 10%, X7R Various – C3, C4, C9, C10 0.1 μF Cap, 0402, 50 V, 10%, X7R Various – C5, C6 10 uF Cap, 1206, 50 V, 20%, X5R Various – R1, R2 10 Ω Res, 0402, 5%, SMD Various – R3, R4 5.1 Ω Res, 0402, 5%, ROHS Various – R5, R6 0 Ω Res, 0402, SMD, jumpers required for the above EVB Various –

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 12 of 14 - www.qorvo.com Assembly Notes 1. Carefully clean the PC board and package leads with alcohol. Allow it to dry fully. 2. To improve the thermal and RF performance, Qorvo recommends attaching a heat sink to the bottom of the PCB and apply thermal compound (Arctic Silver 5 recommended) or 4 mil indium shim between the heat sink and the package. 3. (The following is for information only. There are many variables in a second level assembly that Qorvo does not control, so Qorvo does not recommend an absolute torque value.) Use screws to attach the component to the heat sink. A suggested torque value is 16 in-oz. for a 0-80 screw. Start with screws finger tight, then torque to 8 in-oz., then torque to final value. Use the following tightening pattern: 4. Apply no-flux solder to each pin of the TGA2238-CP. The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. The use of no-clean solder to avoid washing after soldering is recommended.

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 13 of 14 - www.qorvo.com Mechanical Information Units: inches Tolerances: (unless specified) x.xx = ± 0.01 x.xxx = ± 0.005 Materials: Base: Copper Leads: Alloy 194 Lid: LCP (liquid crystal polymer) All metalized features are gold plated Part is epoxy sealed Marking: TGA2238-CP: Part number YY: Part Assembly year WW: Part Assembly week ZZZ: Serial Number (unique for all parts within one assembly lot) MXXX: Batch ID

8 – 11 GHz 50 W GaN Power Amplifier Data Sheet Rev. C, October 2019 - 14 of 14 - www.qorvo.com Handling Precautions Parameter Rating Standard Caution! ESD-Sensitive Device ESD – Human Body Model (HBM) Class 1B JEDEC Standard JESD22 A114 ESD – Charge Device Model (CDM) Class C2 JEDEC Standard JESD22-C101F MSL – Moisture Sensitivity Level N/A RoHS Compliance This product is compliant with the 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment), as amended by Directive 2015/863/EU. This product also has the following attributes:

• Lead Free
• Halogen Free (Chlorine, Bromine)
• Antimony Free
• TBBP-A (C15H12Br402) Free
• PFOS Free
• SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations: Web: www.qorvo.com Tel: 1-844-890-8163 Email: customer.support@qorvo.com Important Notice The information contained herein is believed to be reliable; however, Qorvo makes no warranties regarding the information con tained herein and assumes no responsibility or liability whatsoever for the use of the information contained herein. All informatio n contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for Qorvo products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anythin g described by such information. THIS INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE, USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Copyright 2019 © Qorvo, Inc. | Qorvo is a registered trademark of Qorvo, Inc. Solderability The component leads should be manually soldered, and the package cannot be subjected to conventional reflow processes. Soldering of the component leads is compatible with the latest version of J-STD-020, lead-free solder, 260 °C. The use of no-clean solder to avoid washing after soldering is recommended.